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Results:
1-18
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Results: 18
Authors:
Simonetti, O
Maurel, T
Jourdain, M
Citation: O. Simonetti et al., Effect of substrate doping profile on C-V curves for thin MOS capacitors, EPJ-APPL PH, 14(2), 2001, pp. 127-130
Authors:
Neviere, R
Tournoys, A
Mordon, S
Marechal, X
Song, FL
Jourdain, M
Fourrier, F
Citation: R. Neviere et al., Antithrombin reduces mesenteric venular leukocyte interactions and small intestine injury in endotoxemic rats, SHOCK, 15(3), 2001, pp. 220-225
Authors:
Meinertzhagen, A
Zander, D
Petit, C
Jourdain, M
Gogenheim, D
Citation: A. Meinertzhagen et al., Low voltage and temperature effects on SILC in stressed ultrathin oxide films, SOL ST ELEC, 45(8), 2001, pp. 1371-1381
Authors:
Simonetti, O
Maurel, T
Jourdain, M
Citation: O. Simonetti et al., Extraction of the oxide thickness using a MOS structure quantum model for SiO2 oxide < 5 nm thick films, J NON-CRYST, 280(1-3), 2001, pp. 110-115
Authors:
Lamblin, A
Tournoys, A
Gmyr, V
Jourdain, M
Lefebvre, J
Kerr-Conte, J
Proye, C
Pattou, F
Citation: A. Lamblin et al., Blood mediated reaction following intraportal islet allograft in pigs., ANN CHIR, 126(8), 2001, pp. 743-750
Authors:
Fourrier, F
Cau-Pottier, E
Boutigny, H
Roussel-Delvallez, M
Jourdain, M
Chopin, C
Citation: F. Fourrier et al., Effects of dental plaque antiseptic decontamination on bacterial colonization and nosocomial infections in critically ill patients, INTEN CAR M, 26(9), 2000, pp. 1239-1247
Authors:
Fourrier, F
Jourdain, M
Tourneys, A
Citation: F. Fourrier et al., Clinical trial results with antithrombin III in sepsis, CRIT CARE M, 28(9), 2000, pp. S38-S43
Authors:
Meinertzhagen, A
Petit, C
Jourdain, M
Mondon, F
Citation: A. Meinertzhagen et al., Anode hole injection and stress induced leakage current decay in metal-oxide-semiconductor capacitors, SOL ST ELEC, 44(4), 2000, pp. 623-630
Authors:
Meinertzhagen, A
Zander, D
Petit, C
Jourdain, M
Gogenheim, D
Citation: A. Meinertzhagen et al., On stress induced leakage current in 5 and 3 nm thick oxides, MICROEL REL, 40(4-5), 2000, pp. 711-714
Authors:
Balduyck, M
Albani, D
Jourdain, M
Mizon, C
Tournoys, A
Drobecq, H
Fourrier, F
Mizon, J
Citation: M. Balduyck et al., Inflammation-induced systemic proteolysis of inter-alpha-inhibitor in plasma from patients with sepsis, J LA CL MED, 135(2), 2000, pp. 188-198
Authors:
Ross, P
Burton, GA
Greene, M
Ho, K
Meier, P
Sweet, L
Auwarter, A
Bispo, A
Doe, K
Erstfeld, K
Goudey, S
Goyvaerts, M
Henderson, D
Jourdain, M
Lenon, M
Pandard, P
Qureshi, A
Rowland, C
Schipper, C
Schreurs, W
Trottier, S
Van Aggelen, G
Citation: P. Ross et al., Interlaboratory precision study of a whole sediment toxicity test with thebioluminescent bacterium Vibrio fischeri, ENVIRON TOX, 14(3), 1999, pp. 339-345
Authors:
Goguenheim, D
Bravaix, A
Vuillaume, D
Mondon, F
Candelier, P
Jourdain, M
Meinertzhagen, A
Citation: D. Goguenheim et al., Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides, MICROEL REL, 39(2), 1999, pp. 165-169
Authors:
Meinertzhagen, A
Petit, C
Jourdain, M
Mondon, F
Gogenheim, D
Citation: A. Meinertzhagen et al., On positive charge annihilation and stress-induced leakage current decrease, MICROEL REL, 39(2), 1999, pp. 191-196
Authors:
El-Hdiy, A
Ziane, D
Nebel, F
Vuillaume, D
Jourdain, M
Citation: A. El-hdiy et al., Dependence of interface-state generation on field polarity in metal-oxide-silicon devices of various thicknesses and technologies, J PHYS D, 32(13), 1999, pp. 1435-1442
Authors:
Goguenheim, A
Bravaix, A
Vuillaume, D
Mondon, F
Jourdain, M
Meinertzhagen, A
Citation: A. Goguenheim et al., Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections, J NON-CRYST, 245, 1999, pp. 41-47
Authors:
Nebel, F
Jourdain, M
Citation: F. Nebel et M. Jourdain, On the correlation between interface defects, positive oxide charge and hole fluence throughout the oxide, J NON-CRYST, 245, 1999, pp. 67-72
Authors:
Salace, G
Hadjadj, A
Petit, C
Jourdain, M
Citation: G. Salace et al., Temperature dependence of the electron affinity difference between Si and SiO2 in polysilicon (n(+))-oxide-silicon (p) structures: Effect of the oxide thickness, J APPL PHYS, 85(11), 1999, pp. 7768-7773
Authors:
Meinertzhagen, A
Petit, C
Jourdain, M
Mondon, F
Citation: A. Meinertzhagen et al., Stress-induced leakage current reduction by a low field of opposite polarity to the stress field, J APPL PHYS, 84(9), 1998, pp. 5070-5079
Risultati:
1-18
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