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Results:
1-13
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Results: 13
Authors:
Bunger, T
Behr, D
Eichler, S
Flade, T
Fliegel, W
Jurisch, M
Kleinwechter, A
Kretzer, U
Steinegger, T
Weinert, B
Citation: T. Bunger et al., Development of a vertical gradient freeze process for low EPD GaAs substrates, MAT SCI E B, 80(1-3), 2001, pp. 5-9
Authors:
Niklas, JR
Siegel, W
Jurisch, M
Kretzer, U
Citation: Jr. Niklas et al., GaAs wafer mapping by microwave-detected photoconductivity, MAT SCI E B, 80(1-3), 2001, pp. 206-209
Authors:
Steinegger, T
Naumann, M
Jurisch, M
Donecker, J
Citation: T. Steinegger et al., Precipitate engineering in GaAs studied by laser scattering tomography, MAT SCI E B, 80(1-3), 2001, pp. 215-219
Authors:
Seidl, A
Eichler, S
Flade, T
Jurisch, M
Kohler, A
Kretzer, U
Weinert, B
Citation: A. Seidl et al., 200 mm GaAs crystal growth by the temperature gradient controlled LEC method, J CRYST GR, 225(2-4), 2001, pp. 561-565
Authors:
Jacob, K
Frank, CH
Neubert, M
Rudolph, P
Ulrici, W
Jurisch, M
Korb, J
Citation: K. Jacob et al., A study on carbon incorporation in semi-insulating GaAs crystals grown by the vapor pressure controlled Czochralski technique (VCz) part I: Experiments and results, CRYST RES T, 35(10), 2000, pp. 1163-1171
Authors:
Baeumler, M
Stibal, R
Stolz, W
Steinegger, T
Jurisch, M
Maier, M
Jantz, W
Citation: M. Baeumler et al., Quantitative topographic assessment of Cu incorporation in GaAs, J CRYST GR, 210(1-3), 2000, pp. 207-211
Authors:
Schneider, D
Hammer, R
Jurisch, M
Citation: D. Schneider et al., Non-destructive testing of damage layers in GaAs wafers by surface acoustic waves (vol 14, pg 93, 1999), SEMIC SCI T, 14(3), 1999, pp. 305-305
Authors:
Schneider, D
Hammer, A
Jurisch, M
Citation: D. Schneider et al., Non-destructive testing of damage layers in GaAs wafers by surface acoustic waves, SEMIC SCI T, 14(1), 1999, pp. 93-98
Authors:
Borner, F
Eichler, S
Polity, A
Krause-Rehberg, R
Hammer, R
Jurisch, M
Citation: F. Borner et al., Large-depth defect profiling in GaAs wafers after saw cutting, APPL SURF S, 149(1-4), 1999, pp. 151-158
Authors:
Rudolph, P
Jurisch, M
Citation: P. Rudolph et M. Jurisch, Bulk growth of GaAs An overview, J CRYST GR, 199, 1999, pp. 325-335
Authors:
Flade, T
Jurisch, M
Kleinwechter, A
Kohler, A
Kretzer, U
Prause, J
Reinhold, T
Weinert, B
Citation: T. Flade et al., State of the art 6 '' SI GaAs wafers made of conventionally grown LEC-crystals, J CRYST GR, 199, 1999, pp. 336-342
Authors:
Korb, J
Flade, T
Jurisch, M
Kohler, A
Reinhold, T
Weinert, B
Citation: J. Korb et al., Carbon, oxygen, boron, hydrogen and nitrogen in the LEC growth of SI GaAs:a thermochemical approach, J CRYST GR, 199, 1999, pp. 343-348
Authors:
Gartner, G
Flade, T
Jurisch, M
Kohler, A
Korb, J
Kretzer, U
Weinert, B
Citation: G. Gartner et al., Oxygen incorporation in undoped LEC-GaAs, J CRYST GR, 199, 1999, pp. 355-360
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