Authors:
Jacob, K
Frank, CH
Neubert, M
Rudolph, P
Ulrici, W
Jurisch, M
Korb, J
Citation: K. Jacob et al., A study on carbon incorporation in semi-insulating GaAs crystals grown by the vapor pressure controlled Czochralski technique (VCz) part I: Experiments and results, CRYST RES T, 35(10), 2000, pp. 1163-1171
Citation: D. Schneider et al., Non-destructive testing of damage layers in GaAs wafers by surface acoustic waves (vol 14, pg 93, 1999), SEMIC SCI T, 14(3), 1999, pp. 305-305
Authors:
Korb, J
Flade, T
Jurisch, M
Kohler, A
Reinhold, T
Weinert, B
Citation: J. Korb et al., Carbon, oxygen, boron, hydrogen and nitrogen in the LEC growth of SI GaAs:a thermochemical approach, J CRYST GR, 199, 1999, pp. 343-348