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Results: 1-14 |
Results: 14
KINETICS OF FORMATION AND METASTABILITY MECHANISM FOR THERMAL DONOR-RELATED DEFECTS IN AL-DOPED SILICON
Authors: KACZOR P
Citation: P. Kaczor, KINETICS OF FORMATION AND METASTABILITY MECHANISM FOR THERMAL DONOR-RELATED DEFECTS IN AL-DOPED SILICON, Acta Physica Polonica. A, 90(5), 1996, pp. 861-864
LATTICE SITES OF SILICON IMPURITIES IN ALGAAS GROWN BY LIQUID-PHASE EPITAXY
Authors: KACZOR P ASHWIN MJ DOBOSZ D ZYTKIEWICZ ZR NEWMAN RC DOBACZEWSKI L
Citation: P. Kaczor et al., LATTICE SITES OF SILICON IMPURITIES IN ALGAAS GROWN BY LIQUID-PHASE EPITAXY, Acta Physica Polonica. A, 90(5), 1996, pp. 865-868
ENERGY-LEVEL POSITION OF NI AND BAND OFFSETS IN ZN1-XCDXSE-NI AND ZNSXSE1-X-NI
Authors: SURKOVA TP GIRIAT W GODLEWSKI M KACZOR P PERMOGOROV SA TENISHEV LN
Citation: Tp. Surkova et al., ENERGY-LEVEL POSITION OF NI AND BAND OFFSETS IN ZN1-XCDXSE-NI AND ZNSXSE1-X-NI, Journal of crystal growth, 159(1-4), 1996, pp. 471-474
ENERGY-LEVEL POSITION OF NI AND BAND OFFSETS IN ZN1-XCDXSE-NI AND ZNSXSE1-X-NI
Authors: SURKOVA T GIRIAT W GODLEWSKI M KACZOR P ZAKZEWSKI AJ PERMOGOROV S TENISHEV L
Citation: T. Surkova et al., ENERGY-LEVEL POSITION OF NI AND BAND OFFSETS IN ZN1-XCDXSE-NI AND ZNSXSE1-X-NI, Acta Physica Polonica. A, 88(5), 1995, pp. 925-928
NEW LOCAL VIBRATIONAL-MODES RELATED TO SILICON IN BULK ALGAAS
Authors: KACZOR P ZYTKIEWICZ ZR DOBACZEWSKI L
Citation: P. Kaczor et al., NEW LOCAL VIBRATIONAL-MODES RELATED TO SILICON IN BULK ALGAAS, Acta Physica Polonica. A, 88(4), 1995, pp. 759-762
OPTICAL AND ELECTRICAL-PROPERTIES OF BULK GASB AND ALGASB
Authors: KACZOR P ZYTKIEWICZ ZR DOBOSZ D KALINSKI Z
Citation: P. Kaczor et al., OPTICAL AND ELECTRICAL-PROPERTIES OF BULK GASB AND ALGASB, Acta Physica Polonica. A, 88(4), 1995, pp. 763-766
ABSORPTION STUDIES OF THE SULFUR DONOR IN GASB
Authors: KACZOR P GERRITS AM DOBACZEWSKI L KALINSKI Z WITTLIN A
Citation: P. Kaczor et al., ABSORPTION STUDIES OF THE SULFUR DONOR IN GASB, Acta Physica Polonica. A, 87(2), 1995, pp. 399-402
STRUCTURE OF THE DX STATE FORMED BY DONORS IN (AL,GA)AS AND GA(AS,P)
Authors: DOBACZEWSKI L KACZOR P MISSOUS M PEAKER AR ZYTKIEWICZ ZR
Citation: L. Dobaczewski et al., STRUCTURE OF THE DX STATE FORMED BY DONORS IN (AL,GA)AS AND GA(AS,P), Journal of applied physics, 78(4), 1995, pp. 2468-2477
LAPLACE TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPIC STUDIES OF DEFECTS IN SEMICONDUCTORS
Authors: DOBACZEWSKI L KACZOR P HAWKINS ID PEAKER AR
Citation: L. Dobaczewski et al., LAPLACE TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPIC STUDIES OF DEFECTS IN SEMICONDUCTORS, Journal of applied physics, 76(1), 1994, pp. 194-198
HIGHLY COMPENSATED GAAS CRYSTAL OBTAINED BY MOLECULAR CO-DOPING
Authors: BOZEK R KORONA KP NOWAK G WASIK D SLUPINSKI T KACZOR P
Citation: R. Bozek et al., HIGHLY COMPENSATED GAAS CRYSTAL OBTAINED BY MOLECULAR CO-DOPING, Acta Physica Polonica. A, 84(4), 1993, pp. 669-672
BISTABLE BEHAVIOR OF THE NEW SHALLOW THERMAL DONOR IN ALUMINUM-DOPED SILICON
Authors: KACZOR P GODLEWSKI M GREGORKIEWICZ T
Citation: P. Kaczor et al., BISTABLE BEHAVIOR OF THE NEW SHALLOW THERMAL DONOR IN ALUMINUM-DOPED SILICON, Acta Physica Polonica. A, 84(3), 1993, pp. 555-558
OBSERVATION OF THE INTERMEDIATE-ENERGY STATE OF THE DX CENTER IN ALXGA1-XASTE IN NONSTATIONARY ABSORPTION EXPERIMENTS
Authors: KACZOR P ZYTKIEWICZ ZR DOBACZEWSKI L
Citation: P. Kaczor et al., OBSERVATION OF THE INTERMEDIATE-ENERGY STATE OF THE DX CENTER IN ALXGA1-XASTE IN NONSTATIONARY ABSORPTION EXPERIMENTS, Semiconductor science and technology, 8(11), 1993, pp. 1973-1976
X(1)-X(3) CONDUCTION-BAND SPLITTING OF ALXGA1-XAS OBSERVED IN FAR-INFRARED PHOTOINDUCED ABSORPTION RELATED TO THE DX DEFECT
Authors: KACZOR P ZYTKIEWICZ ZR GODLEWSKI M
Citation: P. Kaczor et al., X(1)-X(3) CONDUCTION-BAND SPLITTING OF ALXGA1-XAS OBSERVED IN FAR-INFRARED PHOTOINDUCED ABSORPTION RELATED TO THE DX DEFECT, Physical review. B, Condensed matter, 47(19), 1993, pp. 12558-12562
IONIZATION AND CAPTURE KINETICS OF DX CENTERS IN ALGAAS AND GASB - APPROACH FOR A NEGATIVE-U DEFECT
Authors: DOBACZEWSKI L KACZOR P
Citation: L. Dobaczewski et P. Kaczor, IONIZATION AND CAPTURE KINETICS OF DX CENTERS IN ALGAAS AND GASB - APPROACH FOR A NEGATIVE-U DEFECT, Semiconductor science and technology, 6(10B), 1991, pp. 51-57
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