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Results:
1-9
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Results: 9
Authors:
LEE HN
LIM MH
KIM YT
KALKUR TS
CHOH SH
Citation: Hn. Lee et al., CHARACTERISTICS OF METAL FERROELECTRIC/INSULATOR/SEMICONDUCTOR FIELD-EFFECT TRANSISTORS USING A PT/SRBI2TA2O9/Y2O3/SI STRUCTURE/, JPN J A P 1, 37(3B), 1998, pp. 1107-1109
Authors:
LIM M
KALKUR TS
Citation: M. Lim et Ts. Kalkur, THE ROLE OF LEAKAGE CURRENT ON THE MEMORY WINDOW AND MEMORY RETENTIONIN MFIS STRUCTURE, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 725-731
Authors:
LIM M
KALKUR TS
Citation: M. Lim et Ts. Kalkur, THE ROLE OF BUFFER LAYER IN STRONTIUM BISMUTH TANTALATE BASED FERROELECTRIC GATE MOS STRUCTURES FOR NONVOLATILE NON DESTRUCTIVE READ-OUT MEMORY APPLICATIONS, Integrated ferroelectrics, 17(1-4), 1997, pp. 433-441
Authors:
LIM M
KALKUR TS
Citation: M. Lim et Ts. Kalkur, ELECTRICAL CHARACTERISTICS OF PT-BISMUTH STRONTIUM TANTALATE(BST)-P-SI WITH ZIRCONIUM-OXIDE BUFFER LAYER, Integrated ferroelectrics, 14(1-4), 1997, pp. 247-257
Authors:
HAEHN S
KALKUR TS
Citation: S. Haehn et Ts. Kalkur, FAILURE ANALYSIS OF VLSI BY I-DDQ TESTING, JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS, 11(3), 1997, pp. 273-283
Authors:
KALKUR TS
LIANG S
LU Y
CHERN CS
Citation: Ts. Kalkur et al., ELECTRICAL CHARACTERISTICS OF MOCVD DEPOSITED BA1-XSRXTIO3 YBA2CU3O7-X ON LAALO3 SUBSTRATE/, Integrated ferroelectrics, 11(1-4), 1995, pp. 129-136
Authors:
ZHANG SY
KALKUR TS
LEE S
CHEN DY
Citation: Sy. Zhang et al., ANALYSIS OF THE SWITCHING SPEED OF BICMOS BUFFER UNDER HIGH-CURRENT, IEEE journal of solid-state circuits, 29(7), 1994, pp. 787-796
Authors:
ZHANG SY
KALKUR TS
Citation: Sy. Zhang et Ts. Kalkur, ANALYSIS OF BICMOS BUFFER FOR INPUT VOLTAGES WITH FINITE RISE-TIME, IEEE journal of solid-state circuits, 29(7), 1994, pp. 797-807
Authors:
ZHANG SY
KALKUR TS
LEE S
GATZA L
Citation: Sy. Zhang et al., A DELAY MODEL AND OPTIMIZATION METHOD OF A LOW-POWER BICMOS LOGIC-CIRCUIT, IEEE journal of solid-state circuits, 29(10), 1994, pp. 1191-1199
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