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Results: 1-9 |
Results: 9
LEAKAGE CURRENT COMPARISON BETWEEN ULTRA-THIN TA2O5 FILMS AND CONVENTIONAL GATE DIELECTRICS
Authors: LU Q PARK D KALNITSKY A CHANG C CHENG CC TAY SP KING TJ HU CM
Citation: Q. Lu et al., LEAKAGE CURRENT COMPARISON BETWEEN ULTRA-THIN TA2O5 FILMS AND CONVENTIONAL GATE DIELECTRICS, IEEE electron device letters, 19(9), 1998, pp. 341-342
TRANSISTOR CHARACTERISTICS WITH TA2O5 GATE DIELECTRIC
Authors: PARK D KING Y LU Q KING TJ HU CM KALNITSKY A TAY SP CHENG CC
Citation: D. Park et al., TRANSISTOR CHARACTERISTICS WITH TA2O5 GATE DIELECTRIC, IEEE electron device letters, 19(11), 1998, pp. 441-443
OBSERVATION OF HIGH INTERFACE STATE DENSITIES AT THE SILICON OXIDE INTERFACE FOR LOW DOPED POLYSILICON/OXIDE/SILICON CAPACITOR STRUCTURES/
Authors: LEVEUGLE C HURLEY PK MATHEWSON A MORAN S SHEEHAN E KALNITSKY A
Citation: C. Leveugle et al., OBSERVATION OF HIGH INTERFACE STATE DENSITIES AT THE SILICON OXIDE INTERFACE FOR LOW DOPED POLYSILICON/OXIDE/SILICON CAPACITOR STRUCTURES/, Microelectronics and reliability, 38(2), 1998, pp. 233-237
IMPACT OF THE POLYSILICON DOPING LEVEL ON THE PROPERTIES OF THE SILICON OXIDE INTERFACE IN POLYSILICON/OXIDE/SILICON CAPACITOR STRUCTURES/
Authors: LEVEUGLE C HURLEY PK MATHEWSON A MORAN S SHEEHAN E KALNITSKY A LEPERT A BEINGLASS I VENKATESAN M
Citation: C. Leveugle et al., IMPACT OF THE POLYSILICON DOPING LEVEL ON THE PROPERTIES OF THE SILICON OXIDE INTERFACE IN POLYSILICON/OXIDE/SILICON CAPACITOR STRUCTURES/, Microelectronic engineering, 36(1-4), 1997, pp. 215-218
DOPANTS (P, AS, AND B) IN THE POLYCRYSTALLINE SILICON TITANIUM SILICIDE SYSTEM - REDISTRIBUTION AND ACTIVATION/
Authors: KALNITSKY A HURLEY PK LEPERT A
Citation: A. Kalnitsky et al., DOPANTS (P, AS, AND B) IN THE POLYCRYSTALLINE SILICON TITANIUM SILICIDE SYSTEM - REDISTRIBUTION AND ACTIVATION/, Journal of the Electrochemical Society, 144(3), 1997, pp. 1090-1095
TISI2 INTEGRATION INA SUBMICRON CMOS PROCESS .1. SALICIDE FORMATION
Authors: BRUN N KALNITSKY A BRUN A
Citation: N. Brun et al., TISI2 INTEGRATION INA SUBMICRON CMOS PROCESS .1. SALICIDE FORMATION, Journal of the Electrochemical Society, 142(6), 1995, pp. 1987-1991
TISI2 INTEGRATION IN A SUBMICRON CMOS PROCESS .2. INTEGRATION ISSUES
Authors: KALNITSKY A BRUN N BRUN A GONCHOND JP
Citation: A. Kalnitsky et al., TISI2 INTEGRATION IN A SUBMICRON CMOS PROCESS .2. INTEGRATION ISSUES, Journal of the Electrochemical Society, 142(6), 1995, pp. 1992-1996
THERMAL-WAVE IMAGING TO CHARACTERIZE THE FORMATION OF TITANIUM DISILICIDE ON MONOCRYSTALLINE, POLY-SILICON, AND CRYSTALLIZED AMORPHOUS-SILICON SUBSTRATES
Authors: BRUN A BRUN N KALNITSKY A
Citation: A. Brun et al., THERMAL-WAVE IMAGING TO CHARACTERIZE THE FORMATION OF TITANIUM DISILICIDE ON MONOCRYSTALLINE, POLY-SILICON, AND CRYSTALLIZED AMORPHOUS-SILICON SUBSTRATES, Journal of the Electrochemical Society, 142(6), 1995, pp. 1996-1999
EFFECT OF LOW-TEMPERATURE (LESS-THAN-900-DEGREES-C) RTA ON THE CONDUCTIVITY OF AS-IMPLANTED LAYERS AND METAL TO P+ CONTACT RESISTANCE
Authors: KALNITSKY A MACNAUGHTON R LI J
Citation: A. Kalnitsky et al., EFFECT OF LOW-TEMPERATURE (LESS-THAN-900-DEGREES-C) RTA ON THE CONDUCTIVITY OF AS-IMPLANTED LAYERS AND METAL TO P+ CONTACT RESISTANCE, Journal of the Electrochemical Society, 141(8), 1994, pp. 2223-2226
Risultati: 1-9 |