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Results:
1-14
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Results: 14
Authors:
EYCKELER M
MONCH W
KAMPEN TU
DIMITROV R
AMBACHER O
STUTZMANN M
Citation: M. Eyckeler et al., NEGATIVE ELECTRON-AFFINITY OF CESIATED P-GAN(0001) SURFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2224-2228
Authors:
HOHENECKER S
KAMPEN TU
ZAHN DRT
BRAUN W
Citation: S. Hohenecker et al., INFLUENCE OF SULFUR INTERLAYERS ON THE MG CAAS(100) INTERFACE FORMATION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2317-2323
Authors:
DENKHAUS E
GOLLOCH A
KAMPEN TU
NIERFELD M
TELGHEDER U
Citation: E. Denkhaus et al., ELECTROLYTIC HYDRIDE GENERATION ELECTROTHERMAL ATOMIC-ABSORPTION SPECTROMETRY - IN-SITU TRAPPING OF AS ON DIFFERENT PRE-CONDITIONED END-HEATED GRAPHITE TUBES, Fresenius' journal of analytical chemistry, 361(6-7), 1998, pp. 733-737
Authors:
KAMPEN TU
EYCKELER M
MONCH W
Citation: Tu. Kampen et al., ELECTRONIC-PROPERTIES OF CESIUM-COVERED GAN(0001) SURFACES, Applied surface science, 123, 1998, pp. 28-32
Authors:
GRABOWSKI SP
KAMPEN TU
NIENHAUS H
MONCH W
Citation: Sp. Grabowski et al., VIBRATIONAL PROPERTIES OF GAN(0001) SURFACES, Applied surface science, 123, 1998, pp. 33-37
Authors:
SCHMITSDORF RF
KAMPEN TU
MONCH W
Citation: Rf. Schmitsdorf et al., EXPLANATION OF THE LINEAR CORRELATION BETWEEN BARRIER HEIGHTS AND IDEALITY FACTORS OF REAL METAL-SEMICONDUCTOR CONTACTS BY LATERALLY NONUNIFORM SCHOTTKY BARRIERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1221-1226
Authors:
TOPF M
MEISTER D
DIRNSTORFER I
STEUDE G
FISCHER S
MEYER BK
KRTSCHIL A
WITTE H
CHRISTEN J
KAMPEN TU
MONCH W
Citation: M. Topf et al., ELECTRICAL AND OPTICAL-PROPERTIES OF P-SIC N-GAN HETEROSTRUCTURES/, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 302-306
Authors:
KAMPEN TU
MONCH W
Citation: Tu. Kampen et W. Monch, BARRIER HEIGHTS OF GAN SCHOTTKY CONTACTS, Applied surface science, 117, 1997, pp. 388-393
Authors:
VANELSBERGEN V
KAMPEN TU
MONCH W
Citation: V. Vanelsbergen et al., SURFACE-ANALYSIS OF 6H-SIC, Surface science, 365(2), 1996, pp. 443-452
Authors:
VANELSBERGEN V
KAMPEN TU
MONCH W
Citation: V. Vanelsbergen et al., ELECTRONIC-PROPERTIES OF CESIUM ON 6H-SIC SURFACES, Journal of applied physics, 79(1), 1996, pp. 316-321
Authors:
KAMPEN TU
SCHMITSDORF RF
MONCH W
Citation: Tu. Kampen et al., SILVER SCHOTTKY CONTACTS ON SI(111) - H-(1X1) SURFACES PREPARED BY WET-CHEMICAL ETCHING, Applied physics A: Materials science & processing, 60(4), 1995, pp. 391-394
Authors:
KAMPEN TU
MONCH W
Citation: Tu. Kampen et W. Monch, LEAD CONTACTS ON SI(111) - H-1 X-1 SURFACES, Surface science, 333, 1995, pp. 490-495
Authors:
SCHMITSDORF RF
KAMPEN TU
MONCH W
Citation: Rf. Schmitsdorf et al., CORRELATION BETWEEN BARRIER HEIGHT AND INTERFACE STRUCTURE OF AG SI(111) SCHOTTKY DIODES/, Surface science, 324(2-3), 1995, pp. 249-256
Authors:
NIENHAUS H
KAMPEN TU
MONCH W
Citation: H. Nienhaus et al., PHONONS IN 3C-SIC, 4H-SIC, AND 6H-SIC, Surface science, 324(1), 1995, pp. 328-332
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