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Results: 1-25 | 26-29
Results: 1-25/29
3-DIMENSIONAL VACUUM MAGNETIC SENSOR WITH A SI EMITTER TIP
Authors: ITOH J UEMURA K KANEMARU S
Citation: J. Itoh et al., 3-DIMENSIONAL VACUUM MAGNETIC SENSOR WITH A SI EMITTER TIP, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1233-1235
SUPPRESSED THRESHOLD VOLTAGE ROLL-OFF CHARACTERISTIC OF 40NM GATE LENGTH ULTRATHIN SOI MOSFET
Authors: ISHII K SUZUKI E KANEMARU S MAEDA T NAGAI K SEKIGAWA T
Citation: K. Ishii et al., SUPPRESSED THRESHOLD VOLTAGE ROLL-OFF CHARACTERISTIC OF 40NM GATE LENGTH ULTRATHIN SOI MOSFET, Electronics Letters, 34(21), 1998, pp. 2069-2070
FABRICATION OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR-STRUCTURED SILICON FIELD EMITTERS WITH A POLYSILICON DUAL-GATE
Authors: KANEMARU S OZAWA K EHARA K HIRANO T TANOUE H ITOH J
Citation: S. Kanemaru et al., FABRICATION OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR-STRUCTURED SILICON FIELD EMITTERS WITH A POLYSILICON DUAL-GATE, JPN J A P 1, 36(12B), 1997, pp. 7736-7740
FABRICATION OF A 3-DIMENSIONAL VACUUM MAGNETIC SENSOR WITH A SI TIP
Authors: UEMURA K KANEMARU S ITOH J
Citation: K. Uemura et al., FABRICATION OF A 3-DIMENSIONAL VACUUM MAGNETIC SENSOR WITH A SI TIP, JPN J A P 1, 36(12B), 1997, pp. 7754-7756
ON ESTIMATING THE AMPLITUDE OF JOVIAN WHISTLERS OBSERVED BY VOYAGER-1AND IMPLICATIONS CONCERNING LIGHTNING
Authors: HOBARA Y KANEMARU S HAYAKAWA M GURNETT DA
Citation: Y. Hobara et al., ON ESTIMATING THE AMPLITUDE OF JOVIAN WHISTLERS OBSERVED BY VOYAGER-1AND IMPLICATIONS CONCERNING LIGHTNING, J GEO R-S P, 102(A4), 1997, pp. 7115-7125
ALPHA-INTERFERON FOR THE TREATMENT OF IDIOPATHIC SUDDEN SENSORINEURALHEARING-LOSS
Authors: KANEMARU S FUKUSHIMA H NAKAMURA H TAMAKI H FUKUYAMA Y TAMURA Y
Citation: S. Kanemaru et al., ALPHA-INTERFERON FOR THE TREATMENT OF IDIOPATHIC SUDDEN SENSORINEURALHEARING-LOSS, European archives of oto-rhino-laryngology, 254(3), 1997, pp. 158-162
CONTROL OF EMISSION CURRENTS FROM SILICON FIELD EMITTER ARRAYS USING A BUILT-IN MOSFET
Authors: KANEMARU S HIRANO T TANOUE H ITOH J
Citation: S. Kanemaru et al., CONTROL OF EMISSION CURRENTS FROM SILICON FIELD EMITTER ARRAYS USING A BUILT-IN MOSFET, Applied surface science, 111, 1997, pp. 218-223
BEAM FOCUSING CHARACTERISTICS OF SILICON MICROTIPS WITH AN INPLANE LENS
Authors: PY C ITOH J HIRANO T KANEMARU S
Citation: C. Py et al., BEAM FOCUSING CHARACTERISTICS OF SILICON MICROTIPS WITH AN INPLANE LENS, I.E.E.E. transactions on electron devices, 44(3), 1997, pp. 498-502
FABRICATION OF FIELD EMITTER ARRAYS WITH HYDROGENATED AMORPHOUS-SILICON ON GLASS
Authors: GAMO H KANEMARU S ITOH J
Citation: H. Gamo et al., FABRICATION OF FIELD EMITTER ARRAYS WITH HYDROGENATED AMORPHOUS-SILICON ON GLASS, JPN J A P 1, 35(12B), 1996, pp. 6620-6622
FABRICATION OF SILICON FIELD EMITTER ARRAYS INTEGRATED WITH BEAM FOCUSING LENS
Authors: YAMAOKA Y KANEMARU S ITOH J
Citation: Y. Yamaoka et al., FABRICATION OF SILICON FIELD EMITTER ARRAYS INTEGRATED WITH BEAM FOCUSING LENS, JPN J A P 1, 35(12B), 1996, pp. 6626-6628
FABRICATION OF SI FIELD EMITTER TIP FOR A 3-DIMENSIONAL VACUUM MAGNETIC SENSOR
Authors: UEMURA K KANEMARU S ITOH J
Citation: K. Uemura et al., FABRICATION OF SI FIELD EMITTER TIP FOR A 3-DIMENSIONAL VACUUM MAGNETIC SENSOR, JPN J A P 1, 35(12B), 1996, pp. 6629-6631
FABRICATION OF A NEW SI FIELD EMITTER TIP WITH METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET) STRUCTURE
Authors: HIRANO T KANEMARU S TANOUE H ITOH J
Citation: T. Hirano et al., FABRICATION OF A NEW SI FIELD EMITTER TIP WITH METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET) STRUCTURE, JPN J A P 1, 35(12B), 1996, pp. 6637-6640
A NEW METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR-STRUCTURED SIFIELD EMITTER TIP
Authors: HIRANO T KANEMARU S ITOH J
Citation: T. Hirano et al., A NEW METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR-STRUCTURED SIFIELD EMITTER TIP, JPN J A P 2, 35(7A), 1996, pp. 861-863
EMISSION CURRENT SATURATION OF THE P-TYPE SILICON GATED FIELD EMITTERARRAY
Authors: HIRANO T KANEMARU S ITOH JJ
Citation: T. Hirano et al., EMISSION CURRENT SATURATION OF THE P-TYPE SILICON GATED FIELD EMITTERARRAY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3357-3360
CONTROL OF EMISSION CHARACTERISTICS OF SILICON FIELD EMITTER ARRAYS BY AN ION-IMPLANTATION TECHNIQUE
Authors: KANEMARU S HIRANO T TANOUE H ITOH J
Citation: S. Kanemaru et al., CONTROL OF EMISSION CHARACTERISTICS OF SILICON FIELD EMITTER ARRAYS BY AN ION-IMPLANTATION TECHNIQUE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1885-1888
ELECTRON-BEAM CHARACTERISTICS OF DOUBLE-GATED SI FIELD EMITTER ARRAYS
Authors: TOMA Y KANEMARU S ITOH J
Citation: Y. Toma et al., ELECTRON-BEAM CHARACTERISTICS OF DOUBLE-GATED SI FIELD EMITTER ARRAYS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1902-1905
MICROSCOPIC CHARACTERIZATION OF FIELD EMITTER ARRAY STRUCTURE AND WORK FUNCTION BY SCANNING MAXWELL-STRESS MICROSCOPY
Authors: ITOH J NAZUKA Y KANEMARU S INOUE T YOKOYAMA H SHIMIZU K
Citation: J. Itoh et al., MICROSCOPIC CHARACTERIZATION OF FIELD EMITTER ARRAY STRUCTURE AND WORK FUNCTION BY SCANNING MAXWELL-STRESS MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2105-2109
AMORPHOUS-SILICON-ON-GLASS FIELD EMITTER ARRAYS
Authors: GAMO H KANEMARU S ITOH J
Citation: H. Gamo et al., AMORPHOUS-SILICON-ON-GLASS FIELD EMITTER ARRAYS, IEEE electron device letters, 17(6), 1996, pp. 261-263
ULTRASTABLE EMISSION FROM A METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR-STRUCTURED SI EMITTER TIP
Authors: ITOH J HIRANO T KANEMARU S
Citation: J. Itoh et al., ULTRASTABLE EMISSION FROM A METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR-STRUCTURED SI EMITTER TIP, Applied physics letters, 69(11), 1996, pp. 1577-1578
EMISSION CHARACTERISTICS OF ION-IMPLANTED SILICON EMITTER TIPS
Authors: HIRANO T KANEMARU S TANOUE H ITOH J
Citation: T. Hirano et al., EMISSION CHARACTERISTICS OF ION-IMPLANTED SILICON EMITTER TIPS, JPN J A P 1, 34(12B), 1995, pp. 6907-6911
NANOSCALE EVALUATION OF STRUCTURE AND SURFACE-POTENTIAL OF GATED FIELD EMITTERS BY SCANNING MAXWELL-STRESS MICROSCOPE
Authors: ITOH J NAZUKA Y INOUE T YOKOYAMA H KANEMARU S SHIMIZU K
Citation: J. Itoh et al., NANOSCALE EVALUATION OF STRUCTURE AND SURFACE-POTENTIAL OF GATED FIELD EMITTERS BY SCANNING MAXWELL-STRESS MICROSCOPE, JPN J A P 1, 34(12B), 1995, pp. 6912-6915
FABRICATION OF PETAL-SHAPED VERTICAL FIELD EMITTER ARRAYS
Authors: GAMO H KANEMARU S ITOH J
Citation: H. Gamo et al., FABRICATION OF PETAL-SHAPED VERTICAL FIELD EMITTER ARRAYS, JPN J A P 1, 34(12B), 1995, pp. 6916-6921
FABRICATION OF SILICON FIELD EMITTER ARRAYS WITH O.1-MU-M-DIAMETER GATE BY FOCUSED ION-BEAM LITHOGRAPHY
Authors: YAMAOKA Y GOTO T NAKAO M KANEMARU S ITOH J
Citation: Y. Yamaoka et al., FABRICATION OF SILICON FIELD EMITTER ARRAYS WITH O.1-MU-M-DIAMETER GATE BY FOCUSED ION-BEAM LITHOGRAPHY, JPN J A P 1, 34(12B), 1995, pp. 6932-6934
FEASIBILITY OF VACUUM MICROELECTRONICS VOLTAGE COMPARATOR
Authors: PY C ITOH J KANEMARU S
Citation: C. Py et al., FEASIBILITY OF VACUUM MICROELECTRONICS VOLTAGE COMPARATOR, JPN J A P 1, 34(11), 1995, pp. 6219-6221
FABRICATION OF DOUBLE-GATED SI FIELD EMITTER ARRAYS FOR FOCUSED ELECTRON-BEAM GENERATION
Authors: ITOH J TOHMA Y MORIKAWA K KANEMARU S SHIMIZU K
Citation: J. Itoh et al., FABRICATION OF DOUBLE-GATED SI FIELD EMITTER ARRAYS FOR FOCUSED ELECTRON-BEAM GENERATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 1968-1972
Risultati: 1-25 | 26-29