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Results: 1-11 |
Results: 11
PROTON IRRADIATION EFFECTS IN SILICON JUNCTION DIODES AND CHARGE-COUPLED-DEVICES
Authors: SIMOEN E VANHELLEMONT J ALAERTS A CLAEYS C GAUBAS E KANIAVA A OHYAMA H SUNAGA H NAHSIYAMA I SKORUPA W
Citation: E. Simoen et al., PROTON IRRADIATION EFFECTS IN SILICON JUNCTION DIODES AND CHARGE-COUPLED-DEVICES, Radiation physics and chemistry, 50(5), 1997, pp. 417-422
INVESTIGATION OF RECOMBINATION PARAMETERS IN SILICON STRUCTURES BY INFRARED AND MICROWAVE TRANSIENT ABSORPTION TECHNIQUES
Authors: GAUBAS E KANIAVA A VAITKUS J
Citation: E. Gaubas et al., INVESTIGATION OF RECOMBINATION PARAMETERS IN SILICON STRUCTURES BY INFRARED AND MICROWAVE TRANSIENT ABSORPTION TECHNIQUES, Semiconductor science and technology, 12(1), 1997, pp. 1-10
THE RESPONSE OF SI P-N-JUNCTION DIODES TO PROTON IRRADIATION
Authors: SIMOEN E VANHELLEMONT J CLAEYS C KANIAVA A GAUBAS E
Citation: E. Simoen et al., THE RESPONSE OF SI P-N-JUNCTION DIODES TO PROTON IRRADIATION, Semiconductor science and technology, 11(10), 1996, pp. 1434-1442
DETERMINATION OF RECOMBINATION PARAMETERS IN SILICON-WAFERS BY TRANSIENT MICROWAVE-ABSORPTION
Authors: GAUBAS E KANIAVA A
Citation: E. Gaubas et A. Kaniava, DETERMINATION OF RECOMBINATION PARAMETERS IN SILICON-WAFERS BY TRANSIENT MICROWAVE-ABSORPTION, Review of scientific instruments, 67(6), 1996, pp. 2339-2345
IMPACT OF FE AND CU CONTAMINATION ON THE MINORITY-CARRIER LIFETIME OFSILICON SUBSTRATES
Authors: ROTONDARO ALP HURD TQ KANIAVA A VANHELLEMONT J SIMOEN E HEYNS MM CLAEYS C
Citation: Alp. Rotondaro et al., IMPACT OF FE AND CU CONTAMINATION ON THE MINORITY-CARRIER LIFETIME OFSILICON SUBSTRATES, Journal of the Electrochemical Society, 143(9), 1996, pp. 3014-3019
RECOMBINATION ACTIVITY OF IRON-RELATED COMPLEXES IN SILICON
Authors: KANIAVA A GAUBAS E VAITKUS J VANHELLEMONT J ROTONDARO ALP
Citation: A. Kaniava et al., RECOMBINATION ACTIVITY OF IRON-RELATED COMPLEXES IN SILICON, Materials science and technology, 11(7), 1995, pp. 670-675
IMPACT OF OXYGEN RELATED EXTENDED DEFECTS ON SILICON DIODE CHARACTERISTICS
Authors: VANHELLEMONT J SIMOEN E KANIAVA A LIBEZNY M CLAEYS C
Citation: J. Vanhellemont et al., IMPACT OF OXYGEN RELATED EXTENDED DEFECTS ON SILICON DIODE CHARACTERISTICS, Journal of applied physics, 77(11), 1995, pp. 5669-5676
RECOMBINATION ACTIVITY OF IRON-RELATED COMPLEXES IN SILICON STUDIED BY TEMPERATURE-DEPENDENT CARRIER LIFETIME MEASUREMENTS
Authors: KANIAVA A ROTONDARO ALP VANHELLEMONT J MENCZIGAR U GAUBAS E
Citation: A. Kaniava et al., RECOMBINATION ACTIVITY OF IRON-RELATED COMPLEXES IN SILICON STUDIED BY TEMPERATURE-DEPENDENT CARRIER LIFETIME MEASUREMENTS, Applied physics letters, 67(26), 1995, pp. 3930-3932
DEEP LEVELS IN HEAT-TREATED AND CF-252-IRRADIATED P-TYPE SILICON SUBSTRATES WITH DIFFERENT OXYGEN-CONTENT
Authors: KANIAVA A VANHELLEMONT J SIMOEN E CLAEYS C
Citation: A. Kaniava et al., DEEP LEVELS IN HEAT-TREATED AND CF-252-IRRADIATED P-TYPE SILICON SUBSTRATES WITH DIFFERENT OXYGEN-CONTENT, Semiconductor science and technology, 9(8), 1994, pp. 1474-1479
ON THE IMPACT OF LOW FLUENCE IRRADIATION WITH MEV PARTICLES ON SILICON DIODE CHARACTERISTICS AND RELATED MATERIAL PROPERTIES
Authors: VANHELLEMONT J SIMOEN E CLAEYS C KANIAVA A GAUBAS E BOSMAN G JOHLANDER B ADAMS L CLAUWS P
Citation: J. Vanhellemont et al., ON THE IMPACT OF LOW FLUENCE IRRADIATION WITH MEV PARTICLES ON SILICON DIODE CHARACTERISTICS AND RELATED MATERIAL PROPERTIES, IEEE transactions on nuclear science, 41(6), 1994, pp. 1924-1931
GENERATION AND ANNEALING BEHAVIOR OF MEV PROTON AND CF-252 IRRADIATION-INDUCED DEEP LEVELS IN SILICON DIODES
Authors: VANHELLEMONT J KANIAVA A SIMOEN E TRAUWAERT MA CLAEYS C JOHLANDER B HARBOESORENSEN R ADAMS L CLAUWS P
Citation: J. Vanhellemont et al., GENERATION AND ANNEALING BEHAVIOR OF MEV PROTON AND CF-252 IRRADIATION-INDUCED DEEP LEVELS IN SILICON DIODES, IEEE transactions on nuclear science, 41(3), 1994, pp. 479-486
Risultati: 1-11 |