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Results: 1-9 |
Results: 9
EMISSIVE CHARACTERISTICS OF MESA-STRIPE LASERS (LAMBDA=3.0-3.6-MU-M) MADE FROM INGAASSB INASSBP DOUBLE HETEROSTRUCTURES/
Authors: AIDARALIEV M ZOTOVA NV KARANDASHEV SA MATVEEV BA REMENNYI MA STUS NM TALALAKIN GN
Citation: M. Aidaraliev et al., EMISSIVE CHARACTERISTICS OF MESA-STRIPE LASERS (LAMBDA=3.0-3.6-MU-M) MADE FROM INGAASSB INASSBP DOUBLE HETEROSTRUCTURES/, Technical physics letters, 24(6), 1998, pp. 472-474
LONG-WAVELENGTH UNCOOLED SOURCES OF LAMBDA=5-6 MU-M RADIATION USING GRADED-INDEX INASSB(P) LAYERS GROWN BY LIQUID-PHASE EPITAXY
Authors: AIDARALIEV M ZOTOVA NV KARANDASHEV SA MATVEEV BA REMENNYI MA STUS NM TALALAKIN GN
Citation: M. Aidaraliev et al., LONG-WAVELENGTH UNCOOLED SOURCES OF LAMBDA=5-6 MU-M RADIATION USING GRADED-INDEX INASSB(P) LAYERS GROWN BY LIQUID-PHASE EPITAXY, Technical physics letters, 24(3), 1998, pp. 243-245
FIBEROPTIC DETECTOR USING A MIDINFRARED DIODE-LASER AND AN ACOUSTOOPTIC MODULATOR
Authors: ZOTOVA NV KARANDASHEV SA KULAKOVA LA MATVEEV BA MELEKH BT STUS NM TALALAKIN GN
Citation: Nv. Zotova et al., FIBEROPTIC DETECTOR USING A MIDINFRARED DIODE-LASER AND AN ACOUSTOOPTIC MODULATOR, Technical physics letters, 23(10), 1997, pp. 781-782
MESA STRIPE FOR THE 3-3.6 MU-M RANGE LASERS UTILIZING GADOLINIUM-DOPED INASSBP INGAASSB DOUBLE HETEROSTRUCTURES/
Authors: ZOTOVA NV KARANDASHEV SA MATVEEV BA REMENNYI MA STUS NM TALALAKIN GN
Citation: Nv. Zotova et al., MESA STRIPE FOR THE 3-3.6 MU-M RANGE LASERS UTILIZING GADOLINIUM-DOPED INASSBP INGAASSB DOUBLE HETEROSTRUCTURES/, Technical physics letters, 23(1), 1997, pp. 41-42
MESA-BAND LASERS BASED ON INASSBP INGAASS B BHS ALLOYED BY GADOLINIUMIN THE 3-3.6-MU-M RANGE/
Authors: ZOTOVA NV KARANDASHEV SA MATVEEV BA REMENNYI MA STUS NM TALALAKIN GN
Citation: Nv. Zotova et al., MESA-BAND LASERS BASED ON INASSBP INGAASS B BHS ALLOYED BY GADOLINIUMIN THE 3-3.6-MU-M RANGE/, Pis'ma v Zurnal tehniceskoj fiziki, 23(1), 1997, pp. 72-76
INASSBP-INAS-INASSBP LASER DOUBLE-HETEROSTRUCTURES WITH A P-N-JUNCTION IN THE ACTIVE-REGION
Authors: AIDARALIEV M BRESLER MS ZOTOVA NV KARANDASHEV SA MATVEEV BA STUS NM TALALAKIN GN
Citation: M. Aidaraliev et al., INASSBP-INAS-INASSBP LASER DOUBLE-HETEROSTRUCTURES WITH A P-N-JUNCTION IN THE ACTIVE-REGION, Semiconductors, 30(8), 1996, pp. 711-715
INAS-BASED LASER DOUBLE HETEROSTRUCTURES WITH P-N-JUNCTION IN THE ACTIVE-REGION
Authors: BRESLER MS GUSEV OB ZOTOVA NV AYDARALIEV M KARANDASHEV SA MATVEEV BA STUS NM TALALAKIN GN
Citation: Ms. Bresler et al., INAS-BASED LASER DOUBLE HETEROSTRUCTURES WITH P-N-JUNCTION IN THE ACTIVE-REGION, Optical materials, 6(1-2), 1996, pp. 111-116
RADIATIVE RECOMBINATION PROCESSES IN DOUBLE INASSBP INASSB/INASSBP HETEROSTRUCTURES/
Authors: BRESLER MS GUSEV OB AIDARALIEV M ZOTOVA NV KARANDASHEV SA MATVEEV BA STUS MN TALALAKIN GN
Citation: Ms. Bresler et al., RADIATIVE RECOMBINATION PROCESSES IN DOUBLE INASSBP INASSB/INASSBP HETEROSTRUCTURES/, Semiconductors, 29(2), 1995, pp. 108-112
LONG-WAVELENGTH LOW-THRESHOLD LASERS BASED ON III-V-COMPOUNDS
Authors: AIDARALIEV M ZOTOVA NV KARANDASHEV SA MATVEEV BA STUS NM TALALAKIN GN
Citation: M. Aidaraliev et al., LONG-WAVELENGTH LOW-THRESHOLD LASERS BASED ON III-V-COMPOUNDS, Semiconductors, 27(1), 1993, pp. 10-15
Risultati: 1-9 |