Authors:
AIDARALIEV M
ZOTOVA NV
KARANDASHEV SA
MATVEEV BA
REMENNYI MA
STUS NM
TALALAKIN GN
Citation: M. Aidaraliev et al., EMISSIVE CHARACTERISTICS OF MESA-STRIPE LASERS (LAMBDA=3.0-3.6-MU-M) MADE FROM INGAASSB INASSBP DOUBLE HETEROSTRUCTURES/, Technical physics letters, 24(6), 1998, pp. 472-474
Authors:
AIDARALIEV M
ZOTOVA NV
KARANDASHEV SA
MATVEEV BA
REMENNYI MA
STUS NM
TALALAKIN GN
Citation: M. Aidaraliev et al., LONG-WAVELENGTH UNCOOLED SOURCES OF LAMBDA=5-6 MU-M RADIATION USING GRADED-INDEX INASSB(P) LAYERS GROWN BY LIQUID-PHASE EPITAXY, Technical physics letters, 24(3), 1998, pp. 243-245
Authors:
ZOTOVA NV
KARANDASHEV SA
KULAKOVA LA
MATVEEV BA
MELEKH BT
STUS NM
TALALAKIN GN
Citation: Nv. Zotova et al., FIBEROPTIC DETECTOR USING A MIDINFRARED DIODE-LASER AND AN ACOUSTOOPTIC MODULATOR, Technical physics letters, 23(10), 1997, pp. 781-782
Authors:
ZOTOVA NV
KARANDASHEV SA
MATVEEV BA
REMENNYI MA
STUS NM
TALALAKIN GN
Citation: Nv. Zotova et al., MESA-BAND LASERS BASED ON INASSBP INGAASS B BHS ALLOYED BY GADOLINIUMIN THE 3-3.6-MU-M RANGE/, Pis'ma v Zurnal tehniceskoj fiziki, 23(1), 1997, pp. 72-76
Authors:
AIDARALIEV M
BRESLER MS
ZOTOVA NV
KARANDASHEV SA
MATVEEV BA
STUS NM
TALALAKIN GN
Citation: M. Aidaraliev et al., INASSBP-INAS-INASSBP LASER DOUBLE-HETEROSTRUCTURES WITH A P-N-JUNCTION IN THE ACTIVE-REGION, Semiconductors, 30(8), 1996, pp. 711-715
Authors:
BRESLER MS
GUSEV OB
ZOTOVA NV
AYDARALIEV M
KARANDASHEV SA
MATVEEV BA
STUS NM
TALALAKIN GN
Citation: Ms. Bresler et al., INAS-BASED LASER DOUBLE HETEROSTRUCTURES WITH P-N-JUNCTION IN THE ACTIVE-REGION, Optical materials, 6(1-2), 1996, pp. 111-116