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Results:
1-8
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Results: 8
Authors:
FU Y
KARLSTEEN M
WILLANDER M
COLLAERT N
DEMEYER K
Citation: Y. Fu et al., QUANTUM TRANSPORT AND I-V CHARACTERISTICS OF QUANTUM-SIZE FIELD-EFFECT TRANSISTOR, Superlattices and microstructures, 24(2), 1998, pp. 111-118
Authors:
BRUCE SPO
RYDBERG A
KIM M
BEISSWANGER FJ
LUY JF
SCHUMACHER H
ERBEN U
WILLANDER M
KARLSTEEN M
Citation: Spo. Bruce et al., DESIGN AND REALIZATION OF A MILLIMETER-WAVE SI SIGE HBT FREQUENCY-MULTIPLIER/, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 695-700
Authors:
FU Y
KARLSTEEN M
WILLANDER M
Citation: Y. Fu et al., ENERGY-BAND STRUCTURE OF QUANTUM-SIZE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR, Superlattices and microstructures, 22(3), 1997, pp. 405-410
Authors:
WAHAB Q
KARLSTEEN M
NUR O
HULTMAN L
WILLANDER M
SUNDGREN JE
Citation: Q. Wahab et al., HETEROJUNCTION DIODES IN 3C-SIC SI SYSTEM GROWN BY REACTIVE MAGNETRONSPUTTERING - EFFECTS OF GROWTH TEMPERATURE ON DIODE RECTIFICATION ANDBREAKDOWN/, Journal of electronic materials, 25(9), 1996, pp. 1495-1500
Authors:
KARLSTEEN M
BARANZAHI A
SPETZ AL
WILLANDER M
LUNDSTROM I
Citation: M. Karlsteen et al., ELECTRICAL-PROPERTIES OF INHOMOGENEOUS SIC MIS STRUCTURES, Journal of electronic materials, 24(7), 1995, pp. 853-861
Authors:
KARLSTEEN M
WILLANDER M
Citation: M. Karlsteen et M. Willander, IMPROVED SWITCH TIME OF I(2)L AT LOW-POWER CONSUMPTION BY USING A SIGE HETEROJUNCTION BIPOLAR-TRANSISTOR, Solid-state electronics, 38(7), 1995, pp. 1401-1407
Authors:
KARLSTEEN M
WILLANDER M
Citation: M. Karlsteen et M. Willander, THE TOTAL SWITCH TIME OF SILICON BIPOLAR-TRANSISTORS WITH BASE DOPINGGRADIENTS OR WITH GERMANIUM GRADIENTS IN THE BASE, Solid-state electronics, 36(11), 1993, pp. 1571-1578
Authors:
GRAHN K
XIA Z
KUIVALAINEN P
KARLSTEEN M
WILLANDER M
Citation: K. Grahn et al., EFFECT OF ION-IMPLANTED GERMANIUM PROFILE ON THE CHARACTERISTICS OF SI1-XGEX SI HETEROJUNCTION BIPOLAR-TRANSISTORS/, Electronics Letters, 29(18), 1993, pp. 1621-1623
Risultati:
1-8
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