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Results:
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Results: 23
Authors:
KARPOV SY
MAKAROV YN
RAMM MS
TALALAEV RA
Citation: Sy. Karpov et al., ANALYSIS OF GALLIUM NITRIDE GROWTH BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 187(3-4), 1998, pp. 397-401
Authors:
ALEKSEEV AN
KARPOV SY
MAIOROV MA
KORABLEV VV
Citation: An. Alekseev et al., INFLUENCE OF MULTILEVEL CRYSTALLIZATION ON THE INTENSITY OSCILLATIONSOF DIFFRACTED HIGH-ENERGY ELECTRONS DURING GROWTH OF ALUMINUM ARSENIDE BY MOLECULAR-BEAM EPITAXY, Technical physics letters, 23(4), 1997, pp. 307-308
Authors:
KARPOV SY
MAIOROV MA
Citation: Sy. Karpov et Ma. Maiorov, KINETIC-MODEL OF GAAS(100) GROWTH FROM MOLECULAR-BEAMS, Technical physics letters, 23(1), 1997, pp. 38-40
Authors:
KARPOV SY
MAKAROV YN
RAMM MS
TALALAEV RA
Citation: Sy. Karpov et al., CONTROL OF SIC GROWTH AND GRAPHITIZATION IN SUBLIMATION SANDWICH SYSTEM, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 340-344
Authors:
AVERYANOVA MV
PRZHEVALSKII IN
KARPOV SY
MAKAROV YN
RAMM MS
TALALAEV RA
Citation: Mv. Averyanova et al., ANALYSIS OF VAPORIZATION KINETICS OF GROUP-III NITRIDES, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 167-171
Authors:
KARPOV SY
MAKAROV YN
RAMM MS
Citation: Sy. Karpov et al., SIMULATION OF SUBLIMATION GROWTH OF SIC SINGLE-CRYSTALS, Physica status solidi. b, Basic research, 202(1), 1997, pp. 201-220
Authors:
KARPOV SY
MAIOROV MA
Citation: Sy. Karpov et Ma. Maiorov, KINETIC-MODEL OF GAAS(100) GROWTH FROM MO LECULAR-BEAMS, Pis'ma v Zurnal tehniceskoj fiziki, 23(1), 1997, pp. 64-71
Authors:
KARPOV SY
MAIOROV MA
Citation: Sy. Karpov et Ma. Maiorov, MODEL OF THE ADSORPTION DESORPTION KINETICS ON A GROWING III-V COMPOUND SURFACE/, Surface science, 393(1-3), 1997, pp. 108-125
Authors:
KARPOV SY
MAKAROV YN
MOKHOV EN
RAMM MG
RAMM MS
ROENKOV AD
TALALAEV RA
VODAKOV YA
Citation: Sy. Karpov et al., ANALYSIS OF SILICON-CARBIDE GROWTH BY SUBLIMATION SANDWICH METHOD, Journal of crystal growth, 173(3-4), 1997, pp. 408-416
Authors:
CHALY VP
KARPOV SY
TERMARTIROSYAN AL
TITOV DV
GUO WZ
Citation: Vp. Chaly et al., MECHANISMS OF OPTICAL CONFINEMENT IN PHASE-LOCKED LASER ARRAYS, Semiconductor science and technology, 11(3), 1996, pp. 372-379
Authors:
KARPOV SY
MAKAROV YN
RAMM MS
Citation: Sy. Karpov et al., ANALYTICAL MODEL OF SILICON-CARBIDE GROWTH UNDER FREE-MOLECULAR TRANSPORT CONDITIONS, Journal of crystal growth, 169(3), 1996, pp. 491-495
Authors:
ALEXEEV AN
KARPOV SY
POGORELSKY YV
SOKOLOV IA
Citation: An. Alexeev et al., RHEED STUDY OF C(4X4)-](2X4) TRANSITION ON GAAS(001) SURFACE, Journal of crystal growth, 166(1-4), 1996, pp. 72-77
Authors:
ALEXEEV AN
KARPOV SY
MAIOROV MA
MYACHIN VE
POGORELSKY YV
SOKOLOV IA
Citation: An. Alexeev et al., THERMAL ETCHING OF BINARY AND TERNARY III-V COMPOUNDS UNDER VACUUM CONDITIONS, Journal of crystal growth, 166(1-4), 1996, pp. 167-171
CONDITIONS OF EXCESS LIQUID-PHASE FORMATION DURING MOLECULAR-BEAM EPITAXY OF III-V TERNARY COMPOUNDS
Authors:
ALEXEEV AN
KARPOV SY
Citation: An. Alexeev et Sy. Karpov, CONDITIONS OF EXCESS LIQUID-PHASE FORMATION DURING MOLECULAR-BEAM EPITAXY OF III-V TERNARY COMPOUNDS, Journal of crystal growth, 162(1-2), 1996, pp. 15-24
Authors:
KARPOV SY
MAIOROV MA
Citation: Sy. Karpov et Ma. Maiorov, ANALYSIS OF V-GROUP MOLECULES STICKING TO III-V COMPOUND SURFACES, Surface science, 344(1-2), 1995, pp. 11-22
Authors:
CHALY VP
DEMIDOV DM
FOKIN GA
KARPOV SY
MYACHIN VE
POGORELSKY YV
RUSANOVICH IY
SHKURKO AP
TERMARTIROSYAN AL
Citation: Vp. Chaly et al., USE OF MOLECULAR-BEAM EPITAXY FOR HIGH-POWER ALGAAS LASER PRODUCTION, Journal of crystal growth, 150(1-4), 1995, pp. 1350-1353
Authors:
KARPOV SY
MYACHIN VE
POGORELSKY YV
Citation: Sy. Karpov et al., TIME-RESOLVED REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF DYNAMICAL SURFACE PROCESSES DURING MOLECULAR-BEAM EPITAXY OF GAAS AND ALAS, Journal of crystal growth, 146(1-4), 1995, pp. 344-348
Authors:
ALEKSEEV AN
KARPOV SY
MYACHIN VE
POGORELSKII YV
RUSANOVICH IY
SOKOLOV IA
FOKIN GA
Citation: An. Alekseev et al., COMPARATIVE-STUDIES OF GAAS(100) SURFACE UNDER STATIC CONDITIONS AND UNDER EPITAXIAL-GROWTH FROM MOLECULAR-BEAMS, Fizika tverdogo tela, 36(8), 1994, pp. 2263-2272
Authors:
ALEKSEEV AN
KARPOV SY
Citation: An. Alekseev et Sy. Karpov, THERMAL ITCHING OF GAAS(100) SURFACE IN V ACUUM, Pis'ma v Zurnal tehniceskoj fiziki, 20(14), 1994, pp. 57-61
Authors:
CHALY VP
ETINBERG MI
FOKIN GA
KARPOV SY
MYACHIN VE
OSTROVSKY AY
POGORELSKY YV
RUSANOVICH IY
SOKOLOV IA
SHCURKO AP
STRUGOV NA
TERMARTIROSYAN AL
Citation: Vp. Chaly et al., A DEGRADATION RATE STUDY OF MBE-GROWN HIGH-POWER ALGAAS LASER-DIODES, Semiconductor science and technology, 9(4), 1994, pp. 345-348
Authors:
KARPOV SY
KOVALCHUK YV
MYACHIN VE
POGORELSKY YV
Citation: Sy. Karpov et al., NUCLEATION AND GROWTH-KINETICS OF GAAS DURING MOLECULAR-BEAM EPITAXY, Surface science, 314(1), 1994, pp. 79-88
Authors:
KARPOV SY
STOLYAROV SN
Citation: Sy. Karpov et Sn. Stolyarov, PROPAGATION AND TRANSFORMATION OF ELECTRO MAGNETIC-WAVES IN ONE-DIMENSIONAL PERIODIC STRUCTURES (VOL 163, PG 63, 1993), Uspehi fiziceskih nauk, 163(5), 1993, pp. 136-136
Authors:
KARPOV SY
KOVALCHUK YV
MYACHIN VE
POGORELSKII YV
Citation: Sy. Karpov et al., INSTABILITY OF III-V COMPOUND SURFACES DUE TO LIQUID-PHASE FORMATION, Journal of crystal growth, 129(3-4), 1993, pp. 563-570
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