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Results:
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Results: 12
Authors:
KASCHIEVA S
STEFANOV KG
KARPUZOV D
Citation: S. Kaschieva et al., ELECTRON-IRRADIATION OF ION-IMPLANTED N-TYPE SI-SIO2 STRUCTURES STUDIED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY, Applied physics A: Materials science & processing, 66(5), 1998, pp. 561-563
Authors:
MANOVA D
DIMITROVA V
FUKAREK W
KARPUZOV D
Citation: D. Manova et al., INVESTIGATION OF DC-REACTIVE MAGNETRON-SPUTTERED ALN THIN-FILMS BY ELECTRON-MICROPROBE ANALYSIS, X-RAY PHOTOELECTRON-SPECTROSCOPY AND POLARIZED INFRARED REFLECTION, Surface & coatings technology, 106(2-3), 1998, pp. 205-208
Authors:
STEFANOV KG
KASCHIEVA S
KARPUZOV D
Citation: Kg. Stefanov et al., ELECTRICAL CHARACTERIZATION OF DEFECTS INDUCED BY 12 MEV ELECTRONS INP-TYPE SI-SIO2 STRUCTURES, Vacuum, 51(2), 1998, pp. 235-237
Authors:
KALITZOVA M
KARPUZOV D
MARINOVA T
KRASTEV V
VITALI G
PIZZUTO C
ZOLLO G
Citation: M. Kalitzova et al., INP CRYSTALS-ION IMPLANTATION AND LASER ANNEALING - RHEED, XPS AND COMPUTER-SIMULATION STUDIES, Applied surface science, 115(1), 1997, pp. 1-9
Authors:
PIZZUTO C
ZOLLO G
VITALI G
KARPUZOV D
KALITZOVA M
Citation: C. Pizzuto et al., ACTIVATION OF ELECTRICAL CARRIERS IN ZN-IMPLANTED INP BY LOW-POWER PULSED-LASER ANNEALING, Journal of applied physics, 82(11), 1997, pp. 5334-5338
Authors:
SIMOV S
KALITZOVA M
KARPUZOV D
YANKOV R
ANGELOV C
FAURE J
BONHOMME P
BALOSSIER G
Citation: S. Simov et al., HIGH-DOSE PHENOMENA IN ZINC-IMPLANTED SILICON-CRYSTALS, Journal of applied physics, 79(7), 1996, pp. 3470-3476
Authors:
NEDIALKOV M
ZINENKO V
KARPUZOV D
Citation: M. Nedialkov et al., A METHOD FOR DETERMINING THE FAST NEUTRAL PORTION OF ION-BEAMS, Vacuum, 46(12), 1995, pp. 1455-1457
Authors:
VITALI G
PIZZUTO C
ROSSI M
ZOLLO G
KARPUZOV D
KALITZOVA M
Citation: G. Vitali et al., LASER-INDUCED REDUCTION OF CARRIER ACTIVATION-ENERGY IN ZN-IMPLANTED GAAS, JPN J A P 1, 33(5A), 1994, pp. 2762-2767
Authors:
MITEVA V
KARPUZOV D
IVANOV P
ANGELOVA S
Citation: V. Miteva et al., STOICHIOMETRY EFFECTS AT CU-NI ALLOY SURFACES DURING 5 KEV AR ION SPUTTERING AT ROOM TEMPERATURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 340-343
Authors:
TZANEV S
NESHEV I
KARPUZOV D
Citation: S. Tzanev et al., AZIMUTH-ENERGY ANISOTROPY OF AR IONS SCATTERED FROM A NI(III) SURFACE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 443-447
Authors:
KALITZOVA M
KARPUZOV D
PASHOV N
VITALI G
ROSSI M
SCHOLZ R
Citation: M. Kalitzova et al., DAMAGE DISTRIBUTION IN GAAS IMPLANTED AT ELEVATED-TEMPERATURE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 647-650
Authors:
KRASTEV V
MARINOVA T
KARPUZOV D
KALITZOVA M
VITALI G
ROSSI M
Citation: V. Krastev et al., XPS STUDY OF LASER-ANNEALED ION-IMPLANTED GAAS, Surface and interface analysis, 20(12), 1993, pp. 955-958
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