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Results: 1-25/80
Authors:
JO J
CHOI YI
KIM DM
ALT K
WANG KL
Citation: J. Jo et al., OBSERVATION OF RESONANCES BY INDIVIDUAL ENERGY-LEVELS IN INGAAS ALAS TRIPLE-BARRIER RESONANT-TUNNELING DIODES/, JPN J A P 1, 37(3B), 1998, pp. 1654-1656
Authors:
KIM HJ
KIM DM
KIM SH
LEE JI
KANG KN
CHO K
Citation: Hj. Kim et al., EFFECTS OF LIGHT ON A P-CHANNEL INGAP GAAS/INGAAS DOUBLE-HETEROJUNCTION PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR/, JPN J A P 2, 37(3B), 1998, pp. 322-324
Authors:
SONG SH
KIM DM
KIM HJ
KIM SH
KANG KN
NATHAN MI
Citation: Sh. Song et al., PHOTONIC MICROWAVE CHARACTERISTICS AND MODELING OF AN AL0.3GA0.7AS GAAS/IN0.13GA0.87AS DOUBLE-HETEROSTRUCTURE PSEUDOMORPHIC HEMT/, IEEE microwave and guided wave letters, 8(1), 1998, pp. 35-37
Authors:
KIM DM
JEON SW
LEE JY
Citation: Dm. Kim et al., A STUDY OF THE DEVELOPMENT OF A HIGH-CAPACITY AND HIGH-PERFORMANCE ZR-TI-MN-V-NI HYDROGEN STORAGE ALLOY FOR NI-MH RECHARGEABLE BATTERIES, Journal of alloys and compounds, 279(2), 1998, pp. 209-214
Authors:
HU WK
KIM DM
JEON SW
LEE JY
Citation: Wk. Hu et al., EFFECT OF ANNEALING TREATMENT ON ELECTROCHEMICAL PROPERTIES OF MM-BASED HYDROGEN STORAGE ALLOYS FOR NI MH BATTERIES/, Journal of alloys and compounds, 270(1-2), 1998, pp. 255-264
Authors:
HU WK
KIM DM
JANG KJ
LEE JY
Citation: Wk. Hu et al., STUDIES ON CO-FREE RARE-EARTH-BASED HYDROGEN STORAGE ALLOYS, Journal of alloys and compounds, 269(1-2), 1998, pp. 254-258
Authors:
KIM DM
LEE SM
JANG KJ
LEE JY
Citation: Dm. Kim et al., THE ELECTRODE CHARACTERISTICS OF OVER-STOICHIOMETRIC ZRMN0.5V0.5NI1.4-STRUCTURE(Y (Y=0.0, 0.2, 0.4 AND 0.6) ALLOYS WITH C15 LAVES PHASE), Journal of alloys and compounds, 268(1-2), 1998, pp. 241-247
Authors:
HU WK
LEE H
KIM DM
JEON SW
LEE JY
Citation: Wk. Hu et al., ELECTROCHEMICAL BEHAVIORS OF LOW-CO MM-BASED ALLOYS AS MH ELECTRODES, Journal of alloys and compounds, 268(1-2), 1998, pp. 261-265
Authors:
JANG KJ
JUNG JH
KIM DM
YU JS
LEE JY
Citation: Kj. Jang et al., SELF-DISCHARGE MECHANISM OF VANADIUM-TITANIUM METAL HYDRIDE ELECTRODES FOR NI-MH RECHARGEABLE BATTERY, Journal of alloys and compounds, 268(1-2), 1998, pp. 290-294
Authors:
JUNG JH
LEE HH
KIM DM
JANG KJ
LEE JY
Citation: Jh. Jung et al., DEGRADATION BEHAVIOR OF CU-COATED TI-ZR-V-MN-NI METAL HYDRIDE ELECTRODES, Journal of alloys and compounds, 266(1-2), 1998, pp. 266-270
Authors:
JUNG JH
LEE SM
KIM DM
JANG KJ
LEE JY
Citation: Jh. Jung et al., EFFECT OF CU POWDER AS COMPACTING MATERIAL ON THE DISCHARGE CHARACTERISTICS OF NEGATIVE ELECTRODES IN NI-MH BATTERIES, Journal of alloys and compounds, 266(1-2), 1998, pp. 271-275
Authors:
AHN SJ
KIM DM
Citation: Sj. Ahn et Dm. Kim, A SIMPLE DIGITAL-TO-ANALOG CONVERSION TECHNIQUE USING SINGLE-ELECTRONTRANSISTOR, IEICE transactions on electronics, E81C(4), 1998, pp. 608-611
A SIMPLE AND EFFICIENT SELF-LIMITING ERASE SCHEME FOR HIGH-PERFORMANCE SPLIT-GATE FLASH MEMORY CELLS
Authors:
AHN BJ
SONE JH
KIM JW
CHOI IH
KIM DM
Citation: Bj. Ahn et al., A SIMPLE AND EFFICIENT SELF-LIMITING ERASE SCHEME FOR HIGH-PERFORMANCE SPLIT-GATE FLASH MEMORY CELLS, IEEE electron device letters, 19(11), 1998, pp. 438-440
Authors:
KIM DM
Citation: Dm. Kim, ELECTRICAL CHARACTERISTICS OF NPN-ALGAAS GAAS HBTS WITH MODULATED BASE DOPING STRUCTURES/, Journal of the Korean Physical Society, 33(5), 1998, pp. 607-611
Authors:
LEE SJ
KIM IC
KIM DM
BAE KH
BYUN SM
Citation: Sj. Lee et al., HIGH-LEVEL SECRETION OF RECOMBINANT STAPHYLOKINASE INTO PERIPLASM OF ESCHERICHIA-COLI, Biotechnology letters, 20(2), 1998, pp. 113-116
Authors:
SONG SH
KIM DM
Citation: Sh. Song et Dm. Kim, A NOVEL ANALYTICAL MODEL FOR SHORT-CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS, Solid-state electronics, 42(4), 1998, pp. 605-612
Authors:
HAN D
KIM SJ
KIM SH
KIM DM
Citation: D. Han et al., REPEATED REGENERATION OF DEGRADED RED BEET JUICE PIGMENTS IN THE PRESENCE OF ANTIOXIDANTS, Journal of food science, 63(1), 1998, pp. 69-72
Authors:
CHANG YJ
LEE HJ
KIM MJ
WOO YH
KIM DM
LIM BS
KIM CW
Citation: Yj. Chang et al., EFFECT OF METAL-SURFACE TREATMENTS ON THE BONDING TO RESIN, Journal of dental research, 77, 1998, pp. 1471-1471
Authors:
KIM DM
CHO MK
KWON WH
Citation: Dm. Kim et al., STACKED GATE MID-CHANNEL INJECTION FLASH EEPROM CELL - PART I - PROGRAMMING SPEED AND EFFICIENCY VERSUS DEVICE STRUCTURE, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1696-1702
Authors:
KIM DM
CHO MK
KWON WH
Citation: Dm. Kim et al., STACKED GATE MID-CHANNEL INJECTION FLASH EEPROM CELL - PART II - ANALYSIS OF GATE CURRENT AND MODELING OF PROGRAMMING CHARACTERISTICS, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1703-1709
Authors:
JEON YJ
JEON MY
KIM JM
JEONG YH
JEONG DH
KIM DM
Citation: Yj. Jeon et al., MONOLITHIC FEEDBACK LOW-NOISE X-BAND AMPLIFIERS USING 0.5-MU-M GAAS-MESFETS - COMPARATIVE THEORETICAL-STUDY AND EXPERIMENTAL CHARACTERIZATION, IEEE journal of solid-state circuits, 33(2), 1998, pp. 275-279
Authors:
AHN SJ
KIM DM
Citation: Sj. Ahn et Dm. Kim, ASYNCHRONOUS ANALOG-TO-DIGITAL CONVERTER FOR SINGLE-ELECTRON CIRCUITS, Electronics Letters, 34(2), 1998, pp. 172-173
Authors:
JUN SB
KIM DM
Citation: Sb. Jun et Dm. Kim, FULLY DIFFERENTIAL CURRENT OPERATIONAL-AMPLIFIER, Electronics Letters, 34(1), 1998, pp. 62-63
Authors:
JUN S
KIM DM
Citation: S. Jun et Dm. Kim, PHASE-TUNABLE CMOS TRIODE TRANSCONDUCTOR, Electronics Letters, 34(1), 1998, pp. 72-74
Authors:
KIM HJ
KIM SH
LEE JI
KANG KN
KIM DM
CHO K
Citation: Hj. Kim et al., OPTICAL-RESPONSES OF INGAP GAAS/INGAAS P-CHANNEL DOUBLE-HETEROJUNCTION PSEUDOMORPHIC MODFET/, Electronics Letters, 34(1), 1998, pp. 126-128