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Results: 1-19 |
Results: 19
SPONTANEOUS LONG-WAVELENGTH INTERLEVEL EMISSION IN QUANTUM-DOT LASER STRUCTURES
Authors: VOROBEV LE FIRSOV DA SHALYGIN VA TULUPENKO VN SHERNYAKOV YM EGOROV AY ZHUKOV AE KOVSH AR KOPEV PS KOCHNEV IV LEDENTSOV NN MAKSIMOV MV USTINOV VM ALFEROV ZI
Citation: Le. Vorobev et al., SPONTANEOUS LONG-WAVELENGTH INTERLEVEL EMISSION IN QUANTUM-DOT LASER STRUCTURES, Technical physics letters, 24(8), 1998, pp. 590-592
GROWTH AND CHARACTERIZATION OF COHERENT QUANTUM DOTS GROWN BY SINGLE-CYCLE AND MULTICYCLE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: KOCHNEV IV LEDENTSOV NN MAXIMOV MV TSATSULNIKOV AF SAKHAROV AV VOLOVIK BV KOPEV PS ALFEROV ZI BIMBERG D KOSOGOV AO RUVIMOV SS WERNER P GOSELE U
Citation: Iv. Kochnev et al., GROWTH AND CHARACTERIZATION OF COHERENT QUANTUM DOTS GROWN BY SINGLE-CYCLE AND MULTICYCLE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 36(6B), 1997, pp. 4107-4110
INGAAS GAAS QUANTUM-DOT LASERS WITH ULTRAHIGH CHARACTERISTIC TEMPERATURE (T-0=385K) GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors: MAXIMOV MV KOCHNEV IV SHERNYAKOV YM ZAITSEV SV GORDEEV NY TSATSULNIKOV AF SAKHAROV AV KRESTNIKOV IL KOPEV PS ALFEROV ZI LEDENTSOV NN BIMBERG D KOSOGOV AO WERNER P GOSELE U
Citation: Mv. Maximov et al., INGAAS GAAS QUANTUM-DOT LASERS WITH ULTRAHIGH CHARACTERISTIC TEMPERATURE (T-0=385K) GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/, JPN J A P 1, 36(6B), 1997, pp. 4221-4223
QUANTUM-DOT INJECTION HETEROLASER WITH ULTRAHIGH THERMAL-STABILITY OFTHE THRESHOLD CURRENT UP TO 50-DEGREES-C
Authors: MAKSIMOV MV GORDEEV NY ZAITSEV SV KOPEV PS KOCHNEV IV LEDENTSOV NN LUNEV AV RUVIMOV SS SAKHAROV AV TSATSULNIKOV AF SHERNYAKOV YM ALFEROV ZI BIMBERG D
Citation: Mv. Maksimov et al., QUANTUM-DOT INJECTION HETEROLASER WITH ULTRAHIGH THERMAL-STABILITY OFTHE THRESHOLD CURRENT UP TO 50-DEGREES-C, Semiconductors, 31(2), 1997, pp. 124-126
3-DIMENSIONAL ARRAYS OF SELF-ORDERED QUANTUM DOTS FOR LASER APPLICATIONS
Authors: LEDENTSOV NN KIRSTAEDTER N GRUNDMANN M BIMBERG D USTINOV VM KOCHNEV IV KOPEV PS ALFEROV ZI
Citation: Nn. Ledentsov et al., 3-DIMENSIONAL ARRAYS OF SELF-ORDERED QUANTUM DOTS FOR LASER APPLICATIONS, Microelectronics, 28(8-10), 1997, pp. 915-931
A LOW-THRESHOLD INJECTION HETEROJUNCTION LASER-BASED ON QUANTUM DOTS,PRODUCED BY GAS-PHASE EPITAXY FROM ORGANOMETALLIC COMPOUNDS
Authors: ALFEROV ZI GORDEEV NY ZAITSEV SV KOPEV PS KOCHNEV IV KOMIN VV KRESTNIKOV IL LEDENTSOV NN LUNEV AV MAKSIMOV MV RUVIMOV SS SAKHAROV AV TSAPULNIKOV AF SHERNYAKOV YM BIMBERG D
Citation: Zi. Alferov et al., A LOW-THRESHOLD INJECTION HETEROJUNCTION LASER-BASED ON QUANTUM DOTS,PRODUCED BY GAS-PHASE EPITAXY FROM ORGANOMETALLIC COMPOUNDS, Semiconductors, 30(2), 1996, pp. 197-200
IDENTIFICATION OF RADIATIVE RECOMBINATION CHANNELS IN QUANTUM-DOT STRUCTURES
Authors: TSATSULNIKOV AF LEDENTSOV NN MAKSIMOV MV EGOROV AY ZHUKOV AE RUVIMOV SS USTINOV VM KOMIN VV KOCHNEV IV KOPEV PS ALFEROV ZI BIMBERG D
Citation: Af. Tsatsulnikov et al., IDENTIFICATION OF RADIATIVE RECOMBINATION CHANNELS IN QUANTUM-DOT STRUCTURES, Semiconductors, 30(10), 1996, pp. 938-943
METASTABLE DEFECTS IN AS-GROWN AND ELECTRON-IRRADIATED AL0.3GA0.7AS
Authors: SOBOLEV MM KOCHNEV IV PAPENTSEV MI KALINOVSKY VS
Citation: Mm. Sobolev et al., METASTABLE DEFECTS IN AS-GROWN AND ELECTRON-IRRADIATED AL0.3GA0.7AS, Semiconductor science and technology, 11(11), 1996, pp. 1692-1695
FORMATION OF COHERENT SUPERDOTS USING METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: LEDENTSOV NN BOHRER J BIMBERG D KOCHNEV IV MAXIMOV MV KOPEV PS ALFEROV ZI KOSOGOV AO RUVIMOV SS WERNER P GOSELE U
Citation: Nn. Ledentsov et al., FORMATION OF COHERENT SUPERDOTS USING METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 69(8), 1996, pp. 1095-1097
REACTIVE ION ETCHED QUANTUM-WIRE STRUCTURES FOR LASER APPLICATIONS
Authors: GUREVICH SA ZAKHEIM DA SOLOVEV SA FEDOROVICH AE KOMIN VV NESTEROV SI KOCHNEV IV SCOPINA VI
Citation: Sa. Gurevich et al., REACTIVE ION ETCHED QUANTUM-WIRE STRUCTURES FOR LASER APPLICATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 47-50
DEVELOPMENT AND STUDY OF THE OPTICAL-PROPERTIES OF INGAAS GAAS QUANTUM WIRES/
Authors: BERT NA GUREVICH SA GLADYSHEVA LG KOGNOVITSKII SO KOKHANOVSKII SI KOCHNEV IV NESTEROV SI SKOPINA VI SMIRNITSKII VB TRAVNIKOV VV TROSHKOV SI USIKOV AS
Citation: Na. Bert et al., DEVELOPMENT AND STUDY OF THE OPTICAL-PROPERTIES OF INGAAS GAAS QUANTUM WIRES/, Semiconductors, 28(9), 1994, pp. 895-898
NEW BISTABLE DEFECT WITH DEEP LEVELS IN SI-DOPED ALXGA1-XAS
Authors: SOBOLEV MM KOCHNEV IV PAPENTSEV MI
Citation: Mm. Sobolev et al., NEW BISTABLE DEFECT WITH DEEP LEVELS IN SI-DOPED ALXGA1-XAS, Semiconductors, 28(4), 1994, pp. 397-400
SPIN-POLARIZED PHOTOEMISSION FROM SEMICON DUCTOR STRUCTURES WITH STRAINED LAYERS
Authors: MAMAEV YA YASHIN YP SUBASHIEV AV STAROVOITOV SA GALAKTIONOV MS YAVICH BS KOCHNEV IV MEIER F VATERLAUS A GROBLY JC HEEP H
Citation: Ya. Mamaev et al., SPIN-POLARIZED PHOTOEMISSION FROM SEMICON DUCTOR STRUCTURES WITH STRAINED LAYERS, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 58(10), 1994, pp. 2-6
MANIFESTATION OF THE ONE-DIMENSIONAL DENS ITY-OF-STATES IN LUMINESCENCE SPECTRA OF INGAAS GAAS QUANTUM WIRES/
Authors: GUREVICH SA GLADYSHEVA LG KOGNOVITSKII SO KOKHANOVSKII SI KOCHNEV IV NESTEROV SI SKOPINA VI SMIRNITSKII VB TRAVNIKOV VV TROSHKOV SI USIKOV AS
Citation: Sa. Gurevich et al., MANIFESTATION OF THE ONE-DIMENSIONAL DENS ITY-OF-STATES IN LUMINESCENCE SPECTRA OF INGAAS GAAS QUANTUM WIRES/, Fizika tverdogo tela, 36(6), 1994, pp. 1774-1777
POWER SUPERMODE INGAAS-GAAS LASERS (LAMBD A=0.98 MU-M) GROWN BY THE ORGANOMETAL GAS-PHASE EPITAXY TECHNIQUE
Authors: BORODITSKII ML DULKIN AE KOCHNEV IV LIVSHITS DA SOKOLOVA NO RAFAILOV EU TARASOV IS SHERNYAKOV YM YAVICH BS
Citation: Ml. Boroditskii et al., POWER SUPERMODE INGAAS-GAAS LASERS (LAMBD A=0.98 MU-M) GROWN BY THE ORGANOMETAL GAS-PHASE EPITAXY TECHNIQUE, Pis'ma v Zurnal tehniceskoj fiziki, 20(6), 1994, pp. 62-66
CHARACTERISTICS OF THE ELECTRIC-CURRENT DEPENDENCE OF THE EFFICIENCY OF SPONTANEOUS EMISSION FROM ALGAAS GAAS LASER-DIODES WITH A SINGLE-QUANTUM-WELL/
Authors: GARBUZOV DZ GULAKOV AB KOCHNEV IV SHERNYAKOV YM KHALFIN VB YAVICH BS
Citation: Dz. Garbuzov et al., CHARACTERISTICS OF THE ELECTRIC-CURRENT DEPENDENCE OF THE EFFICIENCY OF SPONTANEOUS EMISSION FROM ALGAAS GAAS LASER-DIODES WITH A SINGLE-QUANTUM-WELL/, Semiconductors, 27(10), 1993, pp. 946-949
DEGRADATION MECHANISM OF GAAS ALGAAS QUANTUM-WELL LASER (VOL 26, PG 985, 1992)/
Authors: SOBOLEV MM GITTSOVICH AV PAPENTSEV MI KOCHNEV IV YAVICH BS
Citation: Mm. Sobolev et al., DEGRADATION MECHANISM OF GAAS ALGAAS QUANTUM-WELL LASER (VOL 26, PG 985, 1992)/, Semiconductors, 27(1), 1993, pp. 106-106
ROOM-TEMPERATURE REFLECTANCE OF THE GAAS GAALAS SINGLE-QUANTUM-WELL/
Authors: BERKOVITS VL GUSEV AO KOCHNEV IV YAVICH BS
Citation: Vl. Berkovits et al., ROOM-TEMPERATURE REFLECTANCE OF THE GAAS GAALAS SINGLE-QUANTUM-WELL/, Fizika tverdogo tela, 35(4), 1993, pp. 1107-1109
ALUMINUM REDISTRIBUTION IN GAAS-ALGAAS QU ANTUM-DIMENSIONAL STRUCTURES UNDER THE PROTON IRRADIATION
Authors: KOZLOVSKII VV MAZUROV SA BER BY ZAKGEIM AL ZUSHINSKII DA KOZLOVSKAYA IA KOCHNEV IV YAVICH BS
Citation: Vv. Kozlovskii et al., ALUMINUM REDISTRIBUTION IN GAAS-ALGAAS QU ANTUM-DIMENSIONAL STRUCTURES UNDER THE PROTON IRRADIATION, Pis'ma v Zurnal tehniceskoj fiziki, 19(23), 1993, pp. 65-68
Risultati: 1-19 |