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Results: 1-17 |
Results: 17

Authors: KONKAR A HEITZ R RAMACHANDRAN TR CHEN P MADHUKAR A
Citation: A. Konkar et al., FABRICATION OF STRAINED INAS ISLAND ENSEMBLES ON NONPLANAR PATTERNED GAAS(001) SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1334-1338

Authors: MADHUKAR A RAMACHANDRAN TR KONKAR A MUKHAMETZHANOV I YU W CHEN P
Citation: A. Madhukar et al., ON THE ATOMISTIC AND KINETIC NATURE OF STRAINED EPITAXY AND FORMATIONOF COHERENT 3D ISLAND QUANTUM BOXES, Applied surface science, 123, 1998, pp. 266-275

Authors: RICH DH TANG Y KONKAR A CHEN P MADHUKAR A
Citation: Dh. Rich et al., POLARIZED CATHODOLUMINESCENCE STUDY OF SELECTIVELY GROWN SELF-ASSEMBLED INAS GAAS QUANTUM DOTS/, Journal of applied physics, 84(11), 1998, pp. 6337-6344

Authors: KONKAR A MADHUKAR A CHEN P
Citation: A. Konkar et al., STRESS-ENGINEERED SPATIALLY SELECTIVE SELF-ASSEMBLY OF STRAINED INAS QUANTUM DOTS ON NONPLANAR PATTERNED GAAS(001) SUBSTRATES, Applied physics letters, 72(2), 1998, pp. 220-222

Authors: KONKAR A LIN HT RICH DH CHEN P MADHUKAR A
Citation: A. Konkar et al., GROWTH CONTROLLED FABRICATION AND CATHODOLUMINESCENCE STUDY OF 3D CONFINED GAAS VOLUMES ON NONPLANAR PATTERNED GAAS(001) SUBSTRATES, Journal of crystal growth, 175, 1997, pp. 741-746

Authors: KALBURGE A KONKAR A RAMACHANDRAN TR CHEN P MADHUKAR A
Citation: A. Kalburge et al., FOCUSED ION-BEAM-ASSISTED CHEMICALLY ETCHED MESAS ON GAAS(001) AND THE NATURE OF SUBSEQUENT MOLECULAR-BEAM EPITAXIAL-GROWTH, Journal of applied physics, 82(2), 1997, pp. 859-864

Authors: LIN HT RICH DH KONKAR A CHEN P MADHUKAR A
Citation: Ht. Lin et al., CARRIER RELAXATION AND RECOMBINATION IN GAAS ALGAAS QUANTUM HETEROSTRUCTURES AND NANOSTRUCTURES PROBED WITH TIME-RESOLVED CATHODOLUMINESCENCE/, Journal of applied physics, 81(7), 1997, pp. 3186-3195

Authors: RICH DH LIN HT KONKAR A CHEN P MADHUKAR A
Citation: Dh. Rich et al., CATHODOLUMINESCENCE STUDY OF BAND FILLING AND CARRIER THERMALIZATION IN GAAS ALGAAS QUANTUM BOXES/, Journal of applied physics, 81(4), 1997, pp. 1781-1784

Authors: RICH DH LIN HT KONKAR A CHEN P MADHUKAR A
Citation: Dh. Rich et al., TIME-RESOLVED CATHODOLUMINESCENCE STUDY OF CARRIER RELAXATION IN GAASALGAAS LAYERS GROWN ON A PATTERNED GAAS(001) SUBSTRATE/, Applied physics letters, 69(5), 1996, pp. 665-667

Authors: XIE QH KONKAR A KALBURGE A RAMACHANDRAN TR CHEN P CARTLAND R MADHUKAR A LIN HT RICH DH
Citation: Qh. Xie et al., STRUCTURAL AND OPTICAL BEHAVIOR OF STRAINED INAS QUANTUM BOXES GROWN ON PLANAR AND PATTERNED GAAS (100) SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 642-645

Authors: KONKAR A FERTEL R MILLER D BURKMAN A FELLER D
Citation: A. Konkar et al., PHARMACOLOGICAL EVALUATION OF TRIMETOQUINOL (TMQ) ANALOGS ON HUMAN BETA(1)-ADRENOCEPTORS EXPRESSED IN CHINESE-HAMSTER OVARY (CHO) CELLS, The FASEB journal, 9(3), 1995, pp. 108-108

Authors: HASENBERG TC CHEN P MADHUKAR A KOST AR VISHER J KONKAR A
Citation: Tc. Hasenberg et al., INAS GAAS SHORT-PERIOD STRAINED-LAYER SUPERLATTICE MODULATORS GROWN USING ADVANCED DIGITAL REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION TECHNIQUES/, Journal of crystal growth, 150(1-4), 1995, pp. 1368-1374

Authors: KONKAR A RAJKUMAR KC XIE Q CHEN P MADHUKAR A LIN HT RICH DH
Citation: A. Konkar et al., IN-SITU FABRICATION OF 3-DIMENSIONALLY CONFINED GAAS AND INAS VOLUMESVIA GROWTH ON NONPLANAR PATTERNED GAAS(001) SUBSTRATES, Journal of crystal growth, 150(1-4), 1995, pp. 311-316

Authors: XIE QH CHEN P KALBURGE A RAMACHANDRAN TR NAYFONOV A KONKAR A MADHUKAR A
Citation: Qh. Xie et al., REALIZATION OF OPTICALLY-ACTIVE STRAINED INAS ISLAND QUANTUM BOXES ONGAAS(100) VIA MOLECULAR-BEAM EPITAXY AND THE ROLE OF ISLAND INDUCED STRAIN FIELDS, Journal of crystal growth, 150(1-4), 1995, pp. 357-363

Authors: CHEN P XIE Q MADHUKAR A CHEN L KONKAR A
Citation: P. Chen et al., MECHANISMS OF STRAINED ISLAND FORMATION IN MOLECULAR-BEAM EPITAXY OF INAS ON GAAS(100), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2568-2573

Authors: RAJKUMAR KC MADHUKAR A CHEN P KONKAR A CHEN L RAMMOHAN K RICH DH
Citation: Kc. Rajkumar et al., REALIZATION OF 3-DIMENSIONALLY CONFINED STRUCTURES VIA ONE-STEP IN-SITU MOLECULAR-BEAM EPITAXY ON APPROPRIATELY PATTERNED GAAS(111)B AND GAAS(001), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1071-1074

Authors: MADHUKAR A XIE Q CHEN P KONKAR A
Citation: A. Madhukar et al., NATURE OF STRAINED INAS 3-DIMENSIONAL ISLAND FORMATION AND DISTRIBUTION ON GAAS(100), Applied physics letters, 64(20), 1994, pp. 2727-2729
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