Authors:
KONKAR A
HEITZ R
RAMACHANDRAN TR
CHEN P
MADHUKAR A
Citation: A. Konkar et al., FABRICATION OF STRAINED INAS ISLAND ENSEMBLES ON NONPLANAR PATTERNED GAAS(001) SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1334-1338
Authors:
MADHUKAR A
RAMACHANDRAN TR
KONKAR A
MUKHAMETZHANOV I
YU W
CHEN P
Citation: A. Madhukar et al., ON THE ATOMISTIC AND KINETIC NATURE OF STRAINED EPITAXY AND FORMATIONOF COHERENT 3D ISLAND QUANTUM BOXES, Applied surface science, 123, 1998, pp. 266-275
Authors:
RICH DH
TANG Y
KONKAR A
CHEN P
MADHUKAR A
Citation: Dh. Rich et al., POLARIZED CATHODOLUMINESCENCE STUDY OF SELECTIVELY GROWN SELF-ASSEMBLED INAS GAAS QUANTUM DOTS/, Journal of applied physics, 84(11), 1998, pp. 6337-6344
Authors:
KONKAR A
LIN HT
RICH DH
CHEN P
MADHUKAR A
Citation: A. Konkar et al., GROWTH CONTROLLED FABRICATION AND CATHODOLUMINESCENCE STUDY OF 3D CONFINED GAAS VOLUMES ON NONPLANAR PATTERNED GAAS(001) SUBSTRATES, Journal of crystal growth, 175, 1997, pp. 741-746
Authors:
KALBURGE A
KONKAR A
RAMACHANDRAN TR
CHEN P
MADHUKAR A
Citation: A. Kalburge et al., FOCUSED ION-BEAM-ASSISTED CHEMICALLY ETCHED MESAS ON GAAS(001) AND THE NATURE OF SUBSEQUENT MOLECULAR-BEAM EPITAXIAL-GROWTH, Journal of applied physics, 82(2), 1997, pp. 859-864
Authors:
LIN HT
RICH DH
KONKAR A
CHEN P
MADHUKAR A
Citation: Ht. Lin et al., CARRIER RELAXATION AND RECOMBINATION IN GAAS ALGAAS QUANTUM HETEROSTRUCTURES AND NANOSTRUCTURES PROBED WITH TIME-RESOLVED CATHODOLUMINESCENCE/, Journal of applied physics, 81(7), 1997, pp. 3186-3195
Authors:
RICH DH
LIN HT
KONKAR A
CHEN P
MADHUKAR A
Citation: Dh. Rich et al., CATHODOLUMINESCENCE STUDY OF BAND FILLING AND CARRIER THERMALIZATION IN GAAS ALGAAS QUANTUM BOXES/, Journal of applied physics, 81(4), 1997, pp. 1781-1784
Authors:
RICH DH
LIN HT
KONKAR A
CHEN P
MADHUKAR A
Citation: Dh. Rich et al., TIME-RESOLVED CATHODOLUMINESCENCE STUDY OF CARRIER RELAXATION IN GAASALGAAS LAYERS GROWN ON A PATTERNED GAAS(001) SUBSTRATE/, Applied physics letters, 69(5), 1996, pp. 665-667
Authors:
XIE QH
KONKAR A
KALBURGE A
RAMACHANDRAN TR
CHEN P
CARTLAND R
MADHUKAR A
LIN HT
RICH DH
Citation: Qh. Xie et al., STRUCTURAL AND OPTICAL BEHAVIOR OF STRAINED INAS QUANTUM BOXES GROWN ON PLANAR AND PATTERNED GAAS (100) SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 642-645
Authors:
KONKAR A
FERTEL R
MILLER D
BURKMAN A
FELLER D
Citation: A. Konkar et al., PHARMACOLOGICAL EVALUATION OF TRIMETOQUINOL (TMQ) ANALOGS ON HUMAN BETA(1)-ADRENOCEPTORS EXPRESSED IN CHINESE-HAMSTER OVARY (CHO) CELLS, The FASEB journal, 9(3), 1995, pp. 108-108
Authors:
KONKAR A
RAJKUMAR KC
XIE Q
CHEN P
MADHUKAR A
LIN HT
RICH DH
Citation: A. Konkar et al., IN-SITU FABRICATION OF 3-DIMENSIONALLY CONFINED GAAS AND INAS VOLUMESVIA GROWTH ON NONPLANAR PATTERNED GAAS(001) SUBSTRATES, Journal of crystal growth, 150(1-4), 1995, pp. 311-316
Authors:
XIE QH
CHEN P
KALBURGE A
RAMACHANDRAN TR
NAYFONOV A
KONKAR A
MADHUKAR A
Citation: Qh. Xie et al., REALIZATION OF OPTICALLY-ACTIVE STRAINED INAS ISLAND QUANTUM BOXES ONGAAS(100) VIA MOLECULAR-BEAM EPITAXY AND THE ROLE OF ISLAND INDUCED STRAIN FIELDS, Journal of crystal growth, 150(1-4), 1995, pp. 357-363
Citation: P. Chen et al., MECHANISMS OF STRAINED ISLAND FORMATION IN MOLECULAR-BEAM EPITAXY OF INAS ON GAAS(100), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2568-2573
Authors:
RAJKUMAR KC
MADHUKAR A
CHEN P
KONKAR A
CHEN L
RAMMOHAN K
RICH DH
Citation: Kc. Rajkumar et al., REALIZATION OF 3-DIMENSIONALLY CONFINED STRUCTURES VIA ONE-STEP IN-SITU MOLECULAR-BEAM EPITAXY ON APPROPRIATELY PATTERNED GAAS(111)B AND GAAS(001), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1071-1074
Citation: A. Madhukar et al., NATURE OF STRAINED INAS 3-DIMENSIONAL ISLAND FORMATION AND DISTRIBUTION ON GAAS(100), Applied physics letters, 64(20), 1994, pp. 2727-2729