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Results: 1-25 | 26-34

Results: 1-25/34

ACCUMULATION OF ELECTRONS IN GAAS-LAYERS GROWN AT LOW-TEMPERATURES AND CONTAINING ARSENIC CLUSTERS

Authors: BRUNKOV PN CHALDYSHEV VV BERT NA SUVOROVA AA KONNIKOV SG CHERNIGOVSKII AV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR

Citation: Pn. Brunkov et al., ACCUMULATION OF ELECTRONS IN GAAS-LAYERS GROWN AT LOW-TEMPERATURES AND CONTAINING ARSENIC CLUSTERS, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1044-1047

CAPACITANCE-VOLTAGE PROFILING OF AU N-GAAS SCHOTTKY-BARRIER STRUCTURES CONTAINING A LAYER OF SELF-ORGANIZED INAS QUANTUM DOTS/

Authors: BRUNKOV PN SUVOROVA AA BERT NA KOVSH AR ZHUKOV AE EGOROV AY USTINOV VM TSATSULNIKOV AF LEDENTSOV NN KOPEV PS KONNIKOV SG EAVES L MAIN PS

Citation: Pn. Brunkov et al., CAPACITANCE-VOLTAGE PROFILING OF AU N-GAAS SCHOTTKY-BARRIER STRUCTURES CONTAINING A LAYER OF SELF-ORGANIZED INAS QUANTUM DOTS/, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1096-1100

ELECTRON-ESCAPE FROM SELF-ASSEMBLED INAS GAAS QUANTUM-DOT STACKS/

Authors: BROUNKOV PN SUVOROVA AA MAXIMOV MV TSATSULNIKOV AF ZHUKOV AE EGOROV AY KOVSH AR KONNIKOV SG IHN T STODDART ST EAVES L MAIN PC

Citation: Pn. Brounkov et al., ELECTRON-ESCAPE FROM SELF-ASSEMBLED INAS GAAS QUANTUM-DOT STACKS/, Physica. B, Condensed matter, 251, 1998, pp. 267-270

OPTICAL STUDIES OF MODULATION-DOPED INAS GAAS QUANTUM DOTS/

Authors: MAXIMOV MV LEDENTSOV NN TSATSULNIKOV AF USTINOV VM SAKHAROV AV VOLOVIK BV KRESTNIKOV IL ZHEN Z BROUNKOV PN KONNIKOV SG KOPEV PS BELOUSOV MV TURK V BIMBERG D

Citation: Mv. Maximov et al., OPTICAL STUDIES OF MODULATION-DOPED INAS GAAS QUANTUM DOTS/, Microelectronic engineering, 43-4, 1998, pp. 71-77

ELECTRONIC-STRUCTURE OF SELF-ASSEMBLED INAS QUANTUM DOTS IN GAAS MATRIX

Authors: BROUNKOV PN POLIMENI A STODDART ST HENINI M EAVES L MAIN PC KOVSH AR MUSIKHIN YG KONNIKOV SG

Citation: Pn. Brounkov et al., ELECTRONIC-STRUCTURE OF SELF-ASSEMBLED INAS QUANTUM DOTS IN GAAS MATRIX, Applied physics letters, 73(8), 1998, pp. 1092-1094

BISTABILITY OF CHARGE ACCUMULATED IN LOW-TEMPERATURE-GROWN GAAS

Authors: BROUNKOV PN CHALDYSHEV VV SUVOROVA AA BERT NA KONNIKOV SG CHERNIGOVSKII AV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR

Citation: Pn. Brounkov et al., BISTABILITY OF CHARGE ACCUMULATED IN LOW-TEMPERATURE-GROWN GAAS, Applied physics letters, 73(19), 1998, pp. 2796-2798

INVESTIGATION OF TRANSIENT PROCESSES IN YBACUO FILMS BY LOW-TEMPERATURE SCANNING ELECTRON-MICROSCOPY

Authors: SOLOVEV VA GAEVSKII ME KONNIKOV SG SURIS RA BOBYL AV

Citation: Va. Solovev et al., INVESTIGATION OF TRANSIENT PROCESSES IN YBACUO FILMS BY LOW-TEMPERATURE SCANNING ELECTRON-MICROSCOPY, Technical physics letters, 23(11), 1997, pp. 877-880

INVESTIGATION OF THE CHEMICAL-STATE OF COPPER IN CU SIO2 COMPOSITE FILMS BY X-RAY PHOTOELECTRON-SPECTROSCOPY/

Authors: GUREVICH SA ZARAISKAYA TA KONNIKOV SG MIKUSHKIN VM NIKONOV SY SITNIKOVA AA SYSOEV SE KHORENKO VV SHNITOV VV GORDEEV YS

Citation: Sa. Gurevich et al., INVESTIGATION OF THE CHEMICAL-STATE OF COPPER IN CU SIO2 COMPOSITE FILMS BY X-RAY PHOTOELECTRON-SPECTROSCOPY/, Physics of the solid state, 39(10), 1997, pp. 1691-1695

X-RAY CRYSTALLOGRAPHIC INVESTIGATION OF ZNS-AG, CU, MG SINGLE-CRYSTALS

Authors: DENISOV EP ARESHKIN AG FEDOROV DL KONNIKOV SG

Citation: Ep. Denisov et al., X-RAY CRYSTALLOGRAPHIC INVESTIGATION OF ZNS-AG, CU, MG SINGLE-CRYSTALS, Physics of the solid state, 39(1), 1997, pp. 41-43

CATHODOLUMINESCENCE OF P-N-P MICROSTRUCTURES IN CUINSE2 CRYSTALS

Authors: KONNIKOV SG MEDVEDKIN GA SOBOLEV MM SOLOVEV SA

Citation: Sg. Konnikov et al., CATHODOLUMINESCENCE OF P-N-P MICROSTRUCTURES IN CUINSE2 CRYSTALS, Semiconductors, 31(1), 1997, pp. 92-96

X-RAY-INDUCED ELECTRON-EMISSION STUDY OF GAAS NEAR-SURFACE REGION COMPOSITION DAMAGE CAUSED BY AR-BOMBARDMENT( ION)

Authors: POGREBITSKY KJ SOSHNIKOV IP YUREV YN BERT NA KONNIKOV SG

Citation: Kj. Pogrebitsky et al., X-RAY-INDUCED ELECTRON-EMISSION STUDY OF GAAS NEAR-SURFACE REGION COMPOSITION DAMAGE CAUSED BY AR-BOMBARDMENT( ION), PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 7, 1997, pp. 27-34

CAPACITANCE SPECTROSCOPY OF ELECTRON-ENERGY LEVELS IN INAS QUANTUM DOTS IN A GAAS MATRIX

Authors: BRUNKOV PN KONNIKOV SG USTINOV VM ZHUKOV AE EGOROV AY MAKSIMOV MV LEDENTSOV NN KOPEV PS

Citation: Pn. Brunkov et al., CAPACITANCE SPECTROSCOPY OF ELECTRON-ENERGY LEVELS IN INAS QUANTUM DOTS IN A GAAS MATRIX, Semiconductors, 30(5), 1996, pp. 492-496

QUANTITATIVE LOW-TEMPERATURE SCANNING ELE CTRON-MICROSCOPY OF THIN HTSC FILMS

Authors: SOLOVEV VA GAEVSKY ME SHANTSEV DV KONNIKOV SG

Citation: Va. Solovev et al., QUANTITATIVE LOW-TEMPERATURE SCANNING ELE CTRON-MICROSCOPY OF THIN HTSC FILMS, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 60(2), 1996, pp. 32-40

SILICATE-GLASSES DOPED WITH MICROSCOPIC CADMIUM-SULFIDE SELENIDE CRYSTALS AND OPTICAL WAVE-GUIDES BASED ON THEM

Authors: KONNIKOV SG SITNIKOVA AA LIPOVSKII AA NIKONOROV NV KHARCHENKO MV

Citation: Sg. Konnikov et al., SILICATE-GLASSES DOPED WITH MICROSCOPIC CADMIUM-SULFIDE SELENIDE CRYSTALS AND OPTICAL WAVE-GUIDES BASED ON THEM, Semiconductors, 29(8), 1995, pp. 767-772

GROWTH OF EPITAXIAL-FILMS OF SIC BY CHEMICAL-VAPOR-DEPOSITION IN THE CH3SICL3-H-2 SYSTEM

Authors: ZELENIN VV SOLOVEV VG STAROBINETS SM KONNIKOV SG CHELNOKOV VE

Citation: Vv. Zelenin et al., GROWTH OF EPITAXIAL-FILMS OF SIC BY CHEMICAL-VAPOR-DEPOSITION IN THE CH3SICL3-H-2 SYSTEM, Semiconductors, 29(6), 1995, pp. 581-583

RESISTANCE FLICKER NOISE AND CURRENT PERCOLATION IN C-ORIENTED YBA2CU3O7-X FILMS IN THE VICINITY OF T-C

Authors: BOBYL AV GAEVSKI ME KHREBTOV IA KONNIKOV SG SHANTSEV DV SOLOVEV VA SURIS RA TKACHENKO AD

Citation: Av. Bobyl et al., RESISTANCE FLICKER NOISE AND CURRENT PERCOLATION IN C-ORIENTED YBA2CU3O7-X FILMS IN THE VICINITY OF T-C, Physica. C, Superconductivity, 247(1-2), 1995, pp. 7-33

THERMODYNAMIC STABILITY AND STRAIN-ENERGY OF IN0.75GA0.25 AND GASB0.75P0.25 ALLOYS

Authors: ASOMOZA R ELYUKHIN VA KONNIKOV SG

Citation: R. Asomoza et al., THERMODYNAMIC STABILITY AND STRAIN-ENERGY OF IN0.75GA0.25 AND GASB0.75P0.25 ALLOYS, Semiconductor science and technology, 10(8), 1995, pp. 1122-1125

STRUCTURAL CHARACTERISTICS AND SUPERCONDU CTING PROPERTIES OF R1-XYXBA2CU3-YALYO6+DELTA COMPOUNDS WHERE (R=EU, ND)

Authors: USOV OA GOLOSHCHAPOV SI KARTENKO NF KONNIKOV SG ROZHDESTVENSKAYA IV NOSOV YG OSIPOV VN

Citation: Oa. Usov et al., STRUCTURAL CHARACTERISTICS AND SUPERCONDU CTING PROPERTIES OF R1-XYXBA2CU3-YALYO6+DELTA COMPOUNDS WHERE (R=EU, ND), Fizika tverdogo tela, 36(8), 1994, pp. 2328-2338

EFFECT OF FREE CHARGE-CARRIERS ON THE DEP ENDENCE OF INTERATOMIC DISTANCES ON ION RADIUS IN RBA2CU3O7-DELTA COMPOUNDS

Authors: USOV OA KARTENKO NF GOLOSHCHAPOV SI KONNIKOV SG

Citation: Oa. Usov et al., EFFECT OF FREE CHARGE-CARRIERS ON THE DEP ENDENCE OF INTERATOMIC DISTANCES ON ION RADIUS IN RBA2CU3O7-DELTA COMPOUNDS, Pis'ma v Zurnal tehniceskoj fiziki, 20(1), 1994, pp. 21-25

STUDY MESA-STRUCTURES WITH HTSC LAYER OF YBA2CU3O7-X

Authors: GAEVSKII ME DEMIDOV DM DENISOV DV KONNIKOV SG KULAGINA MM SMOLSKII OV CHALYI VP

Citation: Me. Gaevskii et al., STUDY MESA-STRUCTURES WITH HTSC LAYER OF YBA2CU3O7-X, Pis'ma v Zurnal tehniceskoj fiziki, 20(1), 1994, pp. 44-48

DETERMINATION OF THE ESCAPE FUNCTION FOR LOW-ENERGY ELECTRONS USING KINETIC-EQUATION

Authors: BAKALEINIKOV LA KONNIKOV SG POGREBITSKII KY SAIFIDINOV DZ TROPP EA YUREV YN

Citation: La. Bakaleinikov et al., DETERMINATION OF THE ESCAPE FUNCTION FOR LOW-ENERGY ELECTRONS USING KINETIC-EQUATION, Zurnal tehniceskoj fiziki, 64(4), 1994, pp. 9-16

CRYSTAL-STRUCTURE OF BARIUM YTTRIUM NEODYMIUM CUPRATE, Y0.65ND0.35BA2CU2.5AL0.5O7

Authors: USOV OA KARTENKO NF KONNIKOV SG ROZHDESTVENSKAYA IV GOLOSHCHAPOV SI NOSOV YG OSIPOV VN

Citation: Oa. Usov et al., CRYSTAL-STRUCTURE OF BARIUM YTTRIUM NEODYMIUM CUPRATE, Y0.65ND0.35BA2CU2.5AL0.5O7, Zeitschrift fur Kristallographie, 209(3), 1994, pp. 278-278

CRYSTAL-STRUCTURE OF BARIUM NEODYMIUM CUPRATE, NDBA2CU2.70AL0.30O6.70

Authors: USOV OA KARTENKO NF KONNIKOV SG ROZHDESTVENSKAYA IV GOLOSHCHAPOV SI NOSOV YG OSIPOV VN

Citation: Oa. Usov et al., CRYSTAL-STRUCTURE OF BARIUM NEODYMIUM CUPRATE, NDBA2CU2.70AL0.30O6.70, Zeitschrift fur Kristallographie, 209(3), 1994, pp. 279-279

PHOTOPLEOCHROISM OF GAPXAS1-X SURFACE-BARRIER STRUCTURES

Authors: KONNIKOV SG RUD VY RUD YV MELEBAEV D BERKELIEV A SERGINOV M TILEVOV S

Citation: Sg. Konnikov et al., PHOTOPLEOCHROISM OF GAPXAS1-X SURFACE-BARRIER STRUCTURES, JPN J A P 1, 32, 1993, pp. 515-517

POLARIMETRIC EFFECT IN GAPXAS1-X SURFACE-BARRIER STRUCTURES

Authors: KONNIKOV SG MELEBAEV D RUD YV

Citation: Sg. Konnikov et al., POLARIMETRIC EFFECT IN GAPXAS1-X SURFACE-BARRIER STRUCTURES, Semiconductors, 27(5), 1993, pp. 416-418

Risultati: 1-25 | 26-34