ACNP - Italian Periodicals Catalogue

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Results: 1-15 |

Results: 15

ION-IMPLANTATION OF POROUS GALLIUM-PHOSPHIDE

Authors: USHAKOV VV DRAVIN VA MELNIK NN ZAVARITSKAYA TV LOIKO NN KARAVANSKII VA KONSTANTINOVA EA TIMOSHENKO VY

Citation: Vv. Ushakov et al., ION-IMPLANTATION OF POROUS GALLIUM-PHOSPHIDE, Semiconductors (Woodbury, N.Y.), 32(8), 1998, pp. 886-890

INVESTIGATION OF THE PHOTOVOLTAGE IN POR-SI P-SI STRUCTURES BY THE PULSED-PHOTOVOLTAGE METHOD/

Authors: TIMOSHENKO VY KONSTANTINOVA EA DITTRICH T

Citation: Vy. Timoshenko et al., INVESTIGATION OF THE PHOTOVOLTAGE IN POR-SI P-SI STRUCTURES BY THE PULSED-PHOTOVOLTAGE METHOD/, Semiconductors, 32(5), 1998, pp. 549-554

DYNAMICS OF NONEQUILIBRIUM CHARGE-CARRIERS IN SILICON QUANTUM WIRES

Authors: KASHKAROV PK KAMENEV BV KONSTANTINOVA EA EFIMOVA AI PAVLIKOV AV TIMOSHENKO VY

Citation: Pk. Kashkarov et al., DYNAMICS OF NONEQUILIBRIUM CHARGE-CARRIERS IN SILICON QUANTUM WIRES, Uspehi fiziceskih nauk, 168(5), 1998, pp. 577-582

RADIATION HARDNESS OF POROUS SILICON

Authors: USHAKOV VV DRAVIN VA MELNIK NN KARAVANSKII VA KONSTANTINOVA EA TIMOSHENKO VY

Citation: Vv. Ushakov et al., RADIATION HARDNESS OF POROUS SILICON, Semiconductors, 31(9), 1997, pp. 966-969

TEMPERATURE-DEPENDENCE OF THE PHOTOLUMINESCENCE OF POROUS SILICON

Authors: KASHKAROV PK KONSTANTINOVA EA PETROVA SA TIMOSHENKO VY YUNOVICH AE

Citation: Pk. Kashkarov et al., TEMPERATURE-DEPENDENCE OF THE PHOTOLUMINESCENCE OF POROUS SILICON, Semiconductors, 31(6), 1997, pp. 639-641

INFLUENCE OF AMBIENT DIELECTRIC-PROPERTIES ON THE LUMINESCENCE IN QUANTUM WIRES OF POROUS SILICON

Authors: KASHKAROV PK KONSTANTINOVA EA PAVLIKOV AV TIMOSHENKO VY

Citation: Pk. Kashkarov et al., INFLUENCE OF AMBIENT DIELECTRIC-PROPERTIES ON THE LUMINESCENCE IN QUANTUM WIRES OF POROUS SILICON, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2, 1997, pp. 123-129

MECHANISMS FOR THE EFFECT OF ADSORPTION OF MOLECULES ON RECOMBINATIONPROCESSES IN POROUS SILICON

Authors: KASHKAROV PK KONSTANTINOVA EA TIMOSHENKO VY

Citation: Pk. Kashkarov et al., MECHANISMS FOR THE EFFECT OF ADSORPTION OF MOLECULES ON RECOMBINATIONPROCESSES IN POROUS SILICON, Semiconductors, 30(8), 1996, pp. 778-783

INFLUENCE OF PHOTOLUMINESCENCE AND TRAPPING ON THE PHOTOVOLTAGE AT THE POR-SI P-SI STRUCTURE/

Authors: TIMOSHENKO VY KASHKAROV PK MATVEEVA AB KONSTANTINOVA EA FLIETNER H DITTRICH T

Citation: Vy. Timoshenko et al., INFLUENCE OF PHOTOLUMINESCENCE AND TRAPPING ON THE PHOTOVOLTAGE AT THE POR-SI P-SI STRUCTURE/, Thin solid films, 276(1-2), 1996, pp. 216-218

ADSORPTION-INDUCED MODIFICATION OF SPIN AND RECOMBINATION CENTERS IN POROUS SILICON

Authors: KONSTANTINOVA EA DITTRICH T TIMOSHENKO VY KASHKAROV PK

Citation: Ea. Konstantinova et al., ADSORPTION-INDUCED MODIFICATION OF SPIN AND RECOMBINATION CENTERS IN POROUS SILICON, Thin solid films, 276(1-2), 1996, pp. 265-267

OPTICAL-ABSORPTION OF LUMINESCENT POROUS SILICON FILMS

Authors: YARKIN DG KONSTANTINOVA EA TIMOSHENKO VA

Citation: Dg. Yarkin et al., OPTICAL-ABSORPTION OF LUMINESCENT POROUS SILICON FILMS, Semiconductors, 29(4), 1995, pp. 348-349

PHOTOEMF AND PHOTOINDUCED TRAPPING OF A CHARGE IN POROUS SILICON

Authors: MATVEEVA AB KONSTANTINOVA EA TIMOSHENKO VY KASHKAROV PK

Citation: Ab. Matveeva et al., PHOTOEMF AND PHOTOINDUCED TRAPPING OF A CHARGE IN POROUS SILICON, Semiconductors, 29(12), 1995, pp. 1142-1146

RELAXATION MECHANISMS OF ELECTRONIC EXCITATION IN NANOSTRUCTURES OF POROUS SILICON

Authors: DITTRICH T KASHKAROV PK KONSTANTINOVA EA TIMOSHENKO VY

Citation: T. Dittrich et al., RELAXATION MECHANISMS OF ELECTRONIC EXCITATION IN NANOSTRUCTURES OF POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 74-76

INFLUENCE OF MOLECULE ADSORPTION ON POROUS SILICON PHOTOLUMINESCENCE

Authors: DITTRICH T KONSTANTINOVA EA TIMOSHENKO VY

Citation: T. Dittrich et al., INFLUENCE OF MOLECULE ADSORPTION ON POROUS SILICON PHOTOLUMINESCENCE, Thin solid films, 255(1-2), 1995, pp. 238-240

CARRIER RECOMBINATION IN POROUS SILICON

Authors: KASHKAROV PK TIMOSHENKO VY KONSTANTINOVA EA PETROVA SA

Citation: Pk. Kashkarov et al., CARRIER RECOMBINATION IN POROUS SILICON, Semiconductors, 28(1), 1994, pp. 60-62

EFFECT OF ILLUMINATION ON THE PROPERTIES OF PARAMAGNETIC DEFECTS IN VARIABLE-COMPOSITION FILMS OF HYDROGENATED AMORPHOUS-SILICON CARBIDE

Authors: KARYAGIN SN KONSTANTINOVA EA LUPACHEVA AN

Citation: Sn. Karyagin et al., EFFECT OF ILLUMINATION ON THE PROPERTIES OF PARAMAGNETIC DEFECTS IN VARIABLE-COMPOSITION FILMS OF HYDROGENATED AMORPHOUS-SILICON CARBIDE, Semiconductors, 27(7), 1993, pp. 677-678

Risultati: 1-15 |