Authors:
ZHUKOV AE
EGOROV AY
KOVSH AR
USTINOV VM
ZAITSEV SV
GORDEEV NY
KOPCHATOV VI
LUNEV AV
TSATSULNIKOV AF
VOLOVIK BV
LEDENTSOV NN
KOPEV PS
Citation: Ae. Zhukov et al., INVESTIGATION OF THE DEVICE CHARACTERISTICS OF A LOW-THRESHOLD QUANTUM-DOT LASER EMITTING AT 1.9 MU-M, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 795-797
Authors:
ZHUKOV AE
USTINOV VM
EGOROV AY
KOVSH AR
TSATSULNIKOV AF
MAXIMOV MV
LEDENTSOV NN
ZAITSEV SV
GORDEEV NY
KOPCHATOV VI
SHERNYAKOV YM
KOPEV PS
BIMBERG D
ALFEROV ZI
Citation: Ae. Zhukov et al., INJECTION-LASERS BASED ON INGAAS QUANTUM DOTS IN AN ALGAAS MATRIX, Journal of electronic materials, 27(3), 1998, pp. 106-109
Authors:
USTINOV VM
ZHUKOV AE
EGOROV AY
KOVSH AR
ZAITSEV SV
GORDEEV NY
KOPCHATOV VI
LEDENTSOV HN
TSATSULNIKOV AF
VOLOVIK BV
KOPEV PS
ALFEROV ZI
RUVIMOV SS
LILIENTALWEBER Z
BIMBERG D
Citation: Vm. Ustinov et al., LOW-THRESHOLD QUANTUM-DOT INJECTION-LASER EMITTING AT 1.9-MU-M, Electronics Letters, 34(7), 1998, pp. 670-672
Authors:
ZAITSEV SV
GORDEEV NY
KOPCHATOV VI
USTINOV VM
ZHUKOV AE
EGOROV AY
LEDENTSOV NN
MAXIMOV MV
KOPEV PS
KOSOGOV AO
ALFEROV ZI
Citation: Sv. Zaitsev et al., VERTICALLY COUPLED QUANTUM-DOT LASERS - FIRST DEVICE ORIENTED STRUCTURES WITH HIGH INTERNAL QUANTUM EFFICIENCY, JPN J A P 1, 36(6B), 1997, pp. 4219-4220