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Results: 1-24 |
Results: 24
DIELECTRIC-ASSISTED TRILAYER LIFT-OFF PROCESS FOR IMPROVED METAL DEFINITION
Authors: RYAN RW KOPF RF HAMM RA MALIK RJ MASAITIS R OPILA R
Citation: Rw. Ryan et al., DIELECTRIC-ASSISTED TRILAYER LIFT-OFF PROCESS FOR IMPROVED METAL DEFINITION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2759-2762
SIDE-BY-SIDE WAFER BONDING OF INP FOR USE WITH STEPPER-BASED LITHOGRAPHY
Authors: RYAN RW KOPF RF TATE A BURM J HAMM RA
Citation: Rw. Ryan et al., SIDE-BY-SIDE WAFER BONDING OF INP FOR USE WITH STEPPER-BASED LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2110-2112
EVALUATION OF ENCAPSULATION AND PASSIVATION OF INGAAS INP DHBT DEVICES FOR LONG-TERM RELIABILITY/
Authors: KOPF RF HAMM RA RYAN RW BURM J TATE A CHEN YK GEORGIOU G LANG DV REN F
Citation: Rf. Kopf et al., EVALUATION OF ENCAPSULATION AND PASSIVATION OF INGAAS INP DHBT DEVICES FOR LONG-TERM RELIABILITY/, Journal of electronic materials, 27(8), 1998, pp. 954-960
ECR PLASMA ETCH FABRICATION OF C-DOPED BASE INGAAS INP DHBT STRUCTURES - A COMPARISON OF CH4/H-2/AR VS BCL3/N-2 PLASMA ETCH CHEMISTRIES/
Authors: KOPF RF HAMM RA MALIK RJ RYAN RW GEVA M BURM J TATE A
Citation: Rf. Kopf et al., ECR PLASMA ETCH FABRICATION OF C-DOPED BASE INGAAS INP DHBT STRUCTURES - A COMPARISON OF CH4/H-2/AR VS BCL3/N-2 PLASMA ETCH CHEMISTRIES/, Journal of electronic materials, 27(2), 1998, pp. 69-72
OPTIMIZATION OF THE BASE ELECTRODE FOR INGAAS INP DHBT STRUCTURES WITH A BURIED EMITTER-BASE JUNCTION/
Authors: KOPF RF HAMM RA RYAN RW TATE A BURM J
Citation: Rf. Kopf et al., OPTIMIZATION OF THE BASE ELECTRODE FOR INGAAS INP DHBT STRUCTURES WITH A BURIED EMITTER-BASE JUNCTION/, Journal of electronic materials, 27(11), 1998, pp. 1244-1247
EFFECT OF HIGH-DENSITY H-2 PLASMAS ON INGAP GAAS AND ALGAAS/GAAS HEMTS/
Authors: REN F KOPF RF KUO JM LOTHIAN JR LEE JW PEARTON SJ SHUL RJ CONSTANTINE C JOHNSON D
Citation: F. Ren et al., EFFECT OF HIGH-DENSITY H-2 PLASMAS ON INGAP GAAS AND ALGAAS/GAAS HEMTS/, Solid-state electronics, 42(5), 1998, pp. 749-753
HIGH-DENSITY PLASMA DAMAGE IN INGAP GAAS AND ALGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS/
Authors: LEE JW PEARTON SJ REN F KOPF RF KUO JM SHUL RJ CONSTANTINE C JOHNSON D
Citation: Jw. Lee et al., HIGH-DENSITY PLASMA DAMAGE IN INGAP GAAS AND ALGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS/, Journal of the Electrochemical Society, 145(11), 1998, pp. 4036-4039
CHARGE-TRANSFER BETWEEN IN AND GA IN INGAAS-BASED ALLOYS
Authors: MANOR R BRAFMAN O KOPF RF
Citation: R. Manor et al., CHARGE-TRANSFER BETWEEN IN AND GA IN INGAAS-BASED ALLOYS, Physical review. B, Condensed matter, 56(7), 1997, pp. 3567-3570
EXCITON IONIZATION INDUCED BY AN ELECTRIC-FIELD IN A STRONGLY COUPLEDGAAS ALXGA1-XAS SUPERLATTICE/
Authors: VONPLESSEN G MEIER T KOCH M FELDMANN J THOMAS P KOCH SW GOBEL EO GOOSSEN KW KUO JM KOPF RF
Citation: G. Vonplessen et al., EXCITON IONIZATION INDUCED BY AN ELECTRIC-FIELD IN A STRONGLY COUPLEDGAAS ALXGA1-XAS SUPERLATTICE/, Physical review. B, Condensed matter, 53(20), 1996, pp. 13688-13693
KA-BAND MONOLITHIC INGAAS INP HBT VCOS IN CPW STRUCTURE/
Authors: LIN J CHEN YK HUMPHREY DA HAMM RA MALIK RJ TATE A KOPF RF RYAN RW
Citation: J. Lin et al., KA-BAND MONOLITHIC INGAAS INP HBT VCOS IN CPW STRUCTURE/, IEEE microwave and guided wave letters, 5(11), 1995, pp. 379-381
ELECTRIC-FIELD-INDUCED EXCITON IONIZATION IN A GAAS ALGAAS SUPERLATTICE/
Authors: VONPLESSEN G MEIER T KOCH M FELDMANN J KOCH SW THOMAS P GOBEL EO GOOSSEN KW KUO JM KOPF RF
Citation: G. Vonplessen et al., ELECTRIC-FIELD-INDUCED EXCITON IONIZATION IN A GAAS ALGAAS SUPERLATTICE/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(11-12), 1995, pp. 1759-1762
COMPARISON OF MULTIPOLAR AND MAGNETIC-MIRROR ELECTRON-CYCLOTRON-RESONANCE SOURCES FOR CH4 H-2 DRY-ETCHING OF III-V SEMICONDUCTORS
Authors: PEARTON SJ ABERNATHY CR KOPF RF REN F HUBSON WS
Citation: Sj. Pearton et al., COMPARISON OF MULTIPOLAR AND MAGNETIC-MIRROR ELECTRON-CYCLOTRON-RESONANCE SOURCES FOR CH4 H-2 DRY-ETCHING OF III-V SEMICONDUCTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 1333-1339
LOW-TEMPERATURE DRY-ETCHING OF TUNGSTEN, DIELECTRIC, AND TRILEVEL RESIST LAYERS ON GAAS
Authors: PEARTON SJ ABERNATHY CR REN F LOTHIAN JR KOPF RF
Citation: Sj. Pearton et al., LOW-TEMPERATURE DRY-ETCHING OF TUNGSTEN, DIELECTRIC, AND TRILEVEL RESIST LAYERS ON GAAS, Plasma chemistry and plasma processing, 14(4), 1994, pp. 505-522
PHOTOEXCITATION OF COUPLED PLASMON LO PHONON MODES IN ALXGA1-XAS
Authors: MANOR R BRAFMAN O FEKETE D KOPF RF
Citation: R. Manor et al., PHOTOEXCITATION OF COUPLED PLASMON LO PHONON MODES IN ALXGA1-XAS, Semiconductor science and technology, 9(9), 1994, pp. 1659-1665
INFLUENCE OF SCATTERING ON THE FORMATION OF WANNIER-STARK LADDERS ANDBLOCK OSCILLATIONS IN SEMICONDUCTOR SUPERLATTICES
Authors: VONPLESSEN G MEIER T FELDMANN J GOBEL EO THOMAS P GOOSSEN KW KUO JM KOPF RF
Citation: G. Vonplessen et al., INFLUENCE OF SCATTERING ON THE FORMATION OF WANNIER-STARK LADDERS ANDBLOCK OSCILLATIONS IN SEMICONDUCTOR SUPERLATTICES, Physical review. B, Condensed matter, 49(19), 1994, pp. 14058-14061
LOW-TEMPERATURE CHLORINE-BASED DRY-ETCHING OF III-V SEMICONDUCTORS
Authors: PEARTON SJ ABERNATHY CR KOPF RF REN F
Citation: Sj. Pearton et al., LOW-TEMPERATURE CHLORINE-BASED DRY-ETCHING OF III-V SEMICONDUCTORS, Journal of the Electrochemical Society, 141(8), 1994, pp. 2250-2256
ANNEALING-INDUCED REFRACTIVE-INDEX AND ABSORPTION CHANGES OF LOW-TEMPERATURE-GROWN GAAS
Authors: DANKOWSKI SU KIESEL P KNUPFER B KNEISSL M DOHLER GH KEIL UD DYKAAR DR KOPF RF
Citation: Su. Dankowski et al., ANNEALING-INDUCED REFRACTIVE-INDEX AND ABSORPTION CHANGES OF LOW-TEMPERATURE-GROWN GAAS, Applied physics letters, 65(25), 1994, pp. 3269-3271
REFLECTIVITY MEASUREMENTS OF FEMTOSECOND CARRIER AND FIELD-DYNAMICS IN SEMICONDUCTORS
Authors: KEIL UD DYKAAR DR KOPF RF DARACK SB
Citation: Ud. Keil et al., REFLECTIVITY MEASUREMENTS OF FEMTOSECOND CARRIER AND FIELD-DYNAMICS IN SEMICONDUCTORS, Applied physics letters, 64(24), 1994, pp. 3267-3269
FEMTOSECOND REFLECTIVITY MEASUREMENTS AND 2ND-HARMONIC GENERATION IN NONRESONANT EXCITATION OF PHOTOCONDUCTIVE SWITCHES
Authors: KEIL UD DYKAAR DR KOPF RF DARACK SB
Citation: Ud. Keil et al., FEMTOSECOND REFLECTIVITY MEASUREMENTS AND 2ND-HARMONIC GENERATION IN NONRESONANT EXCITATION OF PHOTOCONDUCTIVE SWITCHES, Applied physics letters, 64(14), 1994, pp. 1812-1814
THE EFFECTS OF IONIZING-RADIATION ON GAAS ALGAAS AND INGAAS ALINAS HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: WITMER SB MITTLEMAN SD LEHY D REN F FULLOWAN TR KOPF RF ABERNATHY CR PEARTON SJ HUMPHREY DA MONTGOMERY RK SMITH PR KRESKOVSKY JP GRUBIN HL
Citation: Sb. Witmer et al., THE EFFECTS OF IONIZING-RADIATION ON GAAS ALGAAS AND INGAAS ALINAS HETEROJUNCTION BIPOLAR-TRANSISTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 20(3), 1993, pp. 280-291
PROPERTIES AND APPLICATIONS OF CARBON-DOPED GAAS AND ALXGA1-XAS LAYERS GROWN BY MBE WITH A PYROLYTIC-GRAPHITE FILAMENT
Authors: MALIK RJ NAGLE J MICOVIC M RYAN RW HARRIS T GEVA M HOPKINS LC VANDENBERG J HULL R KOPF RF ANAND Y BRADDOCK WD
Citation: Rj. Malik et al., PROPERTIES AND APPLICATIONS OF CARBON-DOPED GAAS AND ALXGA1-XAS LAYERS GROWN BY MBE WITH A PYROLYTIC-GRAPHITE FILAMENT, Journal of crystal growth, 127(1-4), 1993, pp. 686-689
SELECTIVE N-TYPE AND P-TYPE C-DOPING IN GA0.47IN0.53AS SUPERLATTICES
Authors: SCHUBERT EF KOPF RF
Citation: Ef. Schubert et Rf. Kopf, SELECTIVE N-TYPE AND P-TYPE C-DOPING IN GA0.47IN0.53AS SUPERLATTICES, Journal of crystal growth, 127(1-4), 1993, pp. 1037-1040
MODIFICATION OF GAAS ALGAAS GROWTH-INTERRUPTED INTERFACES THROUGH CHANGES IN AMBIENT CONDITIONS DURING GROWTH/
Authors: KOPF RF SCHUBERT EF HARRIS TD BECKER RS GILMER GH
Citation: Rf. Kopf et al., MODIFICATION OF GAAS ALGAAS GROWTH-INTERRUPTED INTERFACES THROUGH CHANGES IN AMBIENT CONDITIONS DURING GROWTH/, Journal of applied physics, 74(10), 1993, pp. 6139-6145
INCREASED FIBER COMMUNICATIONS BANDWIDTH FROM A RESONANT-CAVITY LIGHT-EMITTING DIODE EMITTING AT LAMBDA=940 NM
Authors: HUNT NEJ SCHUBERT EF KOPF RF SIVCO DL CHO AY ZYDZIK GJ
Citation: Nej. Hunt et al., INCREASED FIBER COMMUNICATIONS BANDWIDTH FROM A RESONANT-CAVITY LIGHT-EMITTING DIODE EMITTING AT LAMBDA=940 NM, Applied physics letters, 63(19), 1993, pp. 2600-2602
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