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Results: 1-10 |
Results: 10

Authors: BESHKOV G DIMITROV DB KOPRINAROVA J GESHEVA K
Citation: G. Beshkov et al., PROPERTIES OF PALLADIUM SILICIDE THIN-FILMS OBTAINED BY VACUUM RAPID THERMAL ANNEALING OF RF-SPUTTERED PD FILMS ON SI, Vacuum, 51(2), 1998, pp. 177-180

Authors: BESHKOV GD DIMITROV DB LAZAROVA V KOPRINAROVA J GESHEVA K VLAEV E
Citation: Gd. Beshkov et al., RAPID THERMAL RECRYSTALLIZATION OF AMORPHOUS-SILICON FILMS, Journal of materials research, 12(10), 1997, pp. 2511-2514

Authors: ALEXANDROV P KOPRINAROVA J TODOROV D
Citation: P. Alexandrov et al., INFLUENCE OF THE DEPOSITION PARAMETERS ON THE CHEMICAL-COMPOSITION OFREACTIVELY RF-SPUTTERED TIO2 ON SI, Applied surface science, 115(2), 1997, pp. 128-134

Authors: ANDREEV A ZAFIROVA B PANAJOTOV K KOPRINAROVA J
Citation: A. Andreev et al., EXPERIMENTAL INVESTIGATION OF THE INFLUENCE OF THE REFRACTIVE-INDEX OF THE INTERMEDIATE PLANAR LAYER ON THE PROPERTIES OF A POLISHED TYPE SINGLE-MODE FIBER COUPLER, J. mod. opt., 43(6), 1996, pp. 1111-1125

Authors: SMIRNOV N NEDEV N KOPRINAROVA J DIMITROV DB
Citation: N. Smirnov et al., THE PERMITTIVITY IN A MAGNETIC-FIELD OF THIN SIOX LAYERS CONTAINING FE AND NI, Vacuum, 47(9), 1996, pp. 1105-1106

Authors: ALEXANDROV P KOPRINAROVA J TODOROV D
Citation: P. Alexandrov et al., DIELECTRIC-PROPERTIES OF TIO2-FILMS REACTIVELY SPUTTERED FROM TI IN AN RF MAGNETRON, Vacuum, 47(11), 1996, pp. 1333-1336

Authors: SPASSOVA E JIVKOV I DANEV G DIMOTROVA T KOPRINAROVA J PASKALEVA A
Citation: E. Spassova et al., LOW-PERMITTIVITY EVAPORATED POLYMER-POLYIMIDE, Vacuum, 47(11), 1996, pp. 1345-1346

Authors: ATANASSOVA E DIMITROVA T KOPRINAROVA J
Citation: E. Atanassova et al., AES AND XPS STUDY OF THIN RF-SPUTTERED TA2O5 LAYERS, Applied surface science, 84(2), 1995, pp. 193-202

Authors: ATANASSOVA E DIMITROVA T KOPRINAROVA J
Citation: E. Atanassova et al., ELEMENTAL COMPOSITION AND STRUCTURAL-PROPERTIES OF THIN RF-SPUTTERED TA2O5 LAYERS, Vacuum, 46(8-10), 1995, pp. 889-891

Authors: ATANASSOVA E KOPRINAROVA J
Citation: E. Atanassova et J. Koprinarova, SENSITIVITY OF A MODIFIED GATELESS FET STRUCTURE TO ETHANOL VAPOR, Microelectronics, 26(5), 1995, pp. 421-429
Risultati: 1-10 |