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Results: 1-18 |
Results: 18
2 WAYS OF POROUS SI PHOTOLUMINESCENCE EXCITATION
Authors: TORCHINSKAYA TV KORSUNSKAYA NE KHOMENKOVA LY SHEINKMAN MK BARAN NP MISIUK A SURMA B DZHUMAEV B
Citation: Tv. Torchinskaya et al., 2 WAYS OF POROUS SI PHOTOLUMINESCENCE EXCITATION, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 162-165
ROLE OF IONIC PROCESSES IN DEGRADATION OF WIDE-GAP II-VI SEMICONDUCTOR-MATERIALS
Authors: BORKOVSKAYA LV DZHYMAEV BR KORSUNSKAYA NE MARKEVICH IV SINGAEVSKY AF SHEINKMAN MK
Citation: Lv. Borkovskaya et al., ROLE OF IONIC PROCESSES IN DEGRADATION OF WIDE-GAP II-VI SEMICONDUCTOR-MATERIALS, Acta Physica Polonica. A, 94(2), 1998, pp. 255-259
2 SOURCES OF EXCITATION OF PHOTOLUMINESCENCE OF POROUS SILICON
Authors: KORSUNSKAYA NE TORCHINSKAYA TV DZHUMAEV BR KHOMENKOVA LY BULAKH BM
Citation: Ne. Korsunskaya et al., 2 SOURCES OF EXCITATION OF PHOTOLUMINESCENCE OF POROUS SILICON, Semiconductors, 31(8), 1997, pp. 773-776
PHOTOLUMINESCENCE AND EPR STUDIES OF POROUS SILICON
Authors: TORCHINSKAYA TV BARAN NP KORSUNSKAYA NE DZHUMAEV BR KHOMENKOVA LY SHEINKMAN MK
Citation: Tv. Torchinskaya et al., PHOTOLUMINESCENCE AND EPR STUDIES OF POROUS SILICON, Journal of luminescence, 72-4, 1997, pp. 400-402
DEPENDENCE OF THE PHOTOLUMINESCENCE OF POROUS SILICON ON THE SURFACE-COMPOSITION OF THE SILICON FIBERS
Authors: KORSUNSKAYA NE TORCHINSKAYA TV DZHUMAEV BR BULAKH BM SMIYAN OD KAPITANCHUK AL ANTONOV SO
Citation: Ne. Korsunskaya et al., DEPENDENCE OF THE PHOTOLUMINESCENCE OF POROUS SILICON ON THE SURFACE-COMPOSITION OF THE SILICON FIBERS, Semiconductors, 30(8), 1996, pp. 792-796
SENSITIZED LUMINESCENCE OF POROUS SILICON AND ITS POLARIZATION CHARACTERISTICS
Authors: BUYANOVA IA GORODETSKII IY KORSUNSKAYA NE SAVCHUK AU SHEINKMAN MK MELNIK TN RARENKO IM
Citation: Ia. Buyanova et al., SENSITIZED LUMINESCENCE OF POROUS SILICON AND ITS POLARIZATION CHARACTERISTICS, Semiconductors, 30(8), 1996, pp. 797-801
EFFECT OF THE SHAPE OF THE FUNDAMENTAL ABSORPTION-EDGE ON THE SHAPE OF THE GREEN-LUMINESCENCE SPECTRUM OF CDS CRYSTALS
Authors: BORKOVSKAYA LV DZHUMAEV BR KORSUNSKAYA NE MARKEVICH IV SINGAEVSKII AF
Citation: Lv. Borkovskaya et al., EFFECT OF THE SHAPE OF THE FUNDAMENTAL ABSORPTION-EDGE ON THE SHAPE OF THE GREEN-LUMINESCENCE SPECTRUM OF CDS CRYSTALS, Semiconductors, 30(4), 1996, pp. 400-402
NATURE OF THE METASTABLE CENTERS RESPONSIBLE FOR THE ANOMALOUS TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF THE (0001) FACE OF CDS CRYSTALS
Authors: DROZDOVA IA KORSUNSKAYA NE MARKEVICH IV SHEINKMAN MK
Citation: Ia. Drozdova et al., NATURE OF THE METASTABLE CENTERS RESPONSIBLE FOR THE ANOMALOUS TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF THE (0001) FACE OF CDS CRYSTALS, Semiconductors, 30(2), 1996, pp. 181-182
PHOTOSENSITIVITY PROFILE FORMATION IN BULK CDS SINGLE-CRYSTALS BY THEACTION OF AN EXTERNAL ELECTRIC-FIELD
Authors: KISLYUK VV KORSUNSKAYA NE MARKEVICH IV PEKAR GS SINGAEVSKII AF SHEINKMAN MK
Citation: Vv. Kislyuk et al., PHOTOSENSITIVITY PROFILE FORMATION IN BULK CDS SINGLE-CRYSTALS BY THEACTION OF AN EXTERNAL ELECTRIC-FIELD, Semiconductors, 30(10), 1996, pp. 986-987
EPR-SPECTRA OF SMALL DONORS RESPONSIBLE F OR ELECTRON-STIMULATED REACTION OF DEFECTS IN CDS CRYSTALS
Authors: BARAN NP DZHUMAEV BR KORSUNSKAYA NE MARKEVICH IV KHOMENKOVA LY SHULGA EP
Citation: Np. Baran et al., EPR-SPECTRA OF SMALL DONORS RESPONSIBLE F OR ELECTRON-STIMULATED REACTION OF DEFECTS IN CDS CRYSTALS, Fizika tverdogo tela, 38(6), 1996, pp. 1735-1741
MECHANISM FOR FORMATION OF CONDUCTING CHANNELS IN CDS CRYSTALS BY AN ELECTRIC-FIELD
Authors: DROZDOVA IA EMBERGENOV BE KORSUNSKAYA NE MARKEVICH IV SINGAEVSKII AF
Citation: Ia. Drozdova et al., MECHANISM FOR FORMATION OF CONDUCTING CHANNELS IN CDS CRYSTALS BY AN ELECTRIC-FIELD, Semiconductors, 29(3), 1995, pp. 277-280
LARGE CDS SINGLE-CRYSTALS WITH A HIGH OPTICAL STRENGTH
Authors: KLIMOVA NV KORSUNSKAYA NE MARKEVICH IV PEKAR GS SINGAEVSKY AF
Citation: Nv. Klimova et al., LARGE CDS SINGLE-CRYSTALS WITH A HIGH OPTICAL STRENGTH, Materials science & engineering. B, Solid-state materials for advanced technology, 34(1), 1995, pp. 12-17
NON-ACTIVATION DONOR MOVEMENT UNDER THE U LTRASOUND IN CDS CRYSTALS
Authors: BORKOVSKAYA LV DZHUMAEV BR DROZDOVA IA KORSUNSKAYA NE MARKEVICH IV SINGAEVSKII AF SHEINKMAN MK
Citation: Lv. Borkovskaya et al., NON-ACTIVATION DONOR MOVEMENT UNDER THE U LTRASOUND IN CDS CRYSTALS, Fizika tverdogo tela, 37(9), 1995, pp. 2745-2748
EXCITATION MECHANISM OF POROUS SILICON LUMINESCENCE - THE ROLE OF SENSITIZERS
Authors: BUYANOVA IA KORSUNSKAYA NE SAVCHUK AU SHEINKMAN MK VONBARDELEBEN HJ
Citation: Ia. Buyanova et al., EXCITATION MECHANISM OF POROUS SILICON LUMINESCENCE - THE ROLE OF SENSITIZERS, Thin solid films, 255(1-2), 1995, pp. 185-187
CONDUCTIVITY ANISOTROPY INDUCED BY AN ELECTRIC-FIELD IN CDS CRYSTALS
Authors: DROZDOVA IA KORSUNSKAYA NE MARKEVICH IV
Citation: Ia. Drozdova et al., CONDUCTIVITY ANISOTROPY INDUCED BY AN ELECTRIC-FIELD IN CDS CRYSTALS, Semiconductors, 28(2), 1994, pp. 215-216
STRUCTURE OF LUMINESCENCE-CENTERS IN ZNSE CRYSTALS
Authors: EMBERGENOV B KORSUNSKAYA NE RYZHIKOV VD GALCHINETSKII LP LISETSKAYA EK
Citation: B. Embergenov et al., STRUCTURE OF LUMINESCENCE-CENTERS IN ZNSE CRYSTALS, Semiconductors, 27(8), 1993, pp. 686-690
INFLUENCE OF MOBILE DEFECTS ON THE CHARACTERISTICS OF A METAL-SEMICONDUCTOR CONTACT IN THE CASE OF CDS CRYSTALS
Authors: DROZDOVA IA EMBERGENOV B KORSUNSKAYA NE MARKEVICH IV
Citation: Ia. Drozdova et al., INFLUENCE OF MOBILE DEFECTS ON THE CHARACTERISTICS OF A METAL-SEMICONDUCTOR CONTACT IN THE CASE OF CDS CRYSTALS, Semiconductors, 27(4), 1993, pp. 372-373
TRANSFORMATION OF EXCITONIC AND DA LUMINESCENCE SPECTRA OF GAPN LIGHT-EMITTING STRUCTURES ON THE INTRODUCTION OF DISLOCATIONS
Authors: TORCHINSKAYA TV KORSUNSKAYA NE SHEINKMAN MK
Citation: Tv. Torchinskaya et al., TRANSFORMATION OF EXCITONIC AND DA LUMINESCENCE SPECTRA OF GAPN LIGHT-EMITTING STRUCTURES ON THE INTRODUCTION OF DISLOCATIONS, Semiconductor science and technology, 7(3), 1992, pp. 385-390
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