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Results: 1-18 |
Results: 18
PHOTOLUMINESCENCE AND DEGRADATION PROPERTIES OF CARBONIZED POROUS SILICON
Authors: KOSTISHKO BM ATAZHANOV SR MIKOV SN
Citation: Bm. Kostishko et al., PHOTOLUMINESCENCE AND DEGRADATION PROPERTIES OF CARBONIZED POROUS SILICON, Technical physics letters, 24(8), 1998, pp. 633-635
ACTIVATION-ENERGY FOR THE FORMATION OF OXYGEN VACANCIES IN UNDOPED NONSTOICHIOMETRIC INDIUM OXIDE-FILMS
Authors: ORLOV AM KOSTISHKO BM GONCHAR LI
Citation: Am. Orlov et al., ACTIVATION-ENERGY FOR THE FORMATION OF OXYGEN VACANCIES IN UNDOPED NONSTOICHIOMETRIC INDIUM OXIDE-FILMS, Technical physics letters, 24(2), 1998, pp. 81-82
INFLUENCE OF SUCCESSIVE ELECTRON AND LASER IRRADIATION ON THE PHOTOLUMINESCENCE OF POROUS SILICON
Authors: KOSTISHKO BM ORLOV AM
Citation: Bm. Kostishko et Am. Orlov, INFLUENCE OF SUCCESSIVE ELECTRON AND LASER IRRADIATION ON THE PHOTOLUMINESCENCE OF POROUS SILICON, Technical physics, 43(3), 1998, pp. 318-322
ACTIVATION-ENERGY OF ELECTRON-STIMULATED QUENCHING OF THE PHOTOLUMINESCENCE OF N-TYPE POROUS SILICON
Authors: KOSTISHKO BM ORLOV AM FROLOV VA
Citation: Bm. Kostishko et al., ACTIVATION-ENERGY OF ELECTRON-STIMULATED QUENCHING OF THE PHOTOLUMINESCENCE OF N-TYPE POROUS SILICON, Technical physics letters, 23(9), 1997, pp. 714-716
ANOMALOUS EVOLUTION OF PHOTOLUMINESCENCE IN POROUS SILICON IN AN ELECTRIC-FIELD
Authors: KOSTISHKO BM GONCHAR LI
Citation: Bm. Kostishko et Li. Gonchar, ANOMALOUS EVOLUTION OF PHOTOLUMINESCENCE IN POROUS SILICON IN AN ELECTRIC-FIELD, JETP letters, 66(5), 1997, pp. 382-386
STOICHIOMETRY AND PROPERTIES OF UNDOPED INDIUM OXIDE-FILMS PREPARED BY REACTIVE EVAPORATION
Authors: KOSTISHKO BM ORLOV AM GONCHAR LI
Citation: Bm. Kostishko et al., STOICHIOMETRY AND PROPERTIES OF UNDOPED INDIUM OXIDE-FILMS PREPARED BY REACTIVE EVAPORATION, Inorganic materials, 33(8), 1997, pp. 816-819
TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE BEHAVIOR OF POROUS SILICON UNDER CW LASER IRRADIATION
Authors: ORLOV AM KOSTISHKO BM EMELYANOVA TG NIKITIN KE
Citation: Am. Orlov et al., TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE BEHAVIOR OF POROUS SILICON UNDER CW LASER IRRADIATION, Inorganic materials, 33(10), 1997, pp. 993-996
MASS-TRANSFER OF SILVER IN GERMANIUM INVOLVING THE LIQUID-PHASE
Authors: ORLOV AM SKVORTSOV AA KOSTISHKO BM
Citation: Am. Orlov et al., MASS-TRANSFER OF SILVER IN GERMANIUM INVOLVING THE LIQUID-PHASE, High temperature, 35(3), 1997, pp. 398-401
EVOLUTION OF POROUS SILICON LUMINESCENCE UNDER THE SIMULTANEOUS THERMAL AND LASER EFFECTS
Authors: KOSTISHKO BM ORLOV AM EMELYANOV TG
Citation: Bm. Kostishko et al., EVOLUTION OF POROUS SILICON LUMINESCENCE UNDER THE SIMULTANEOUS THERMAL AND LASER EFFECTS, Pis'ma v Zurnal tehniceskoj fiziki, 22(10), 1996, pp. 68-73
PHOTOLUMINESCENCE KINETICS OF ETCHED POROUS SILICON UNDER CONTINUOUS-WAVE LASER EXCITATION
Authors: ORLOV AM KOSTISHKO BM EMELYANOVA TG
Citation: Am. Orlov et al., PHOTOLUMINESCENCE KINETICS OF ETCHED POROUS SILICON UNDER CONTINUOUS-WAVE LASER EXCITATION, Inorganic materials, 32(9), 1996, pp. 908-910
EFFECT OF DIFFUSION-PROCESSES ON THE CONTACT MELTING OF METALLIZATIONLAYERS IN SI-SI-A (GE-A)-AL STRUCTURES
Authors: ORLOV AM KOSTISHKO BM SKVORTSOV AA
Citation: Am. Orlov et al., EFFECT OF DIFFUSION-PROCESSES ON THE CONTACT MELTING OF METALLIZATIONLAYERS IN SI-SI-A (GE-A)-AL STRUCTURES, Inorganic materials, 32(3), 1996, pp. 246-249
PHOTOLUMINESCENCE QUENCHING IN ELECTRON-IRRADIATED-POROUS SILICON
Authors: KOSTISHKO BM ORLOV AM EMELYANOVA TG
Citation: Bm. Kostishko et al., PHOTOLUMINESCENCE QUENCHING IN ELECTRON-IRRADIATED-POROUS SILICON, Inorganic materials, 32(12), 1996, pp. 1252-1254
CHEMICAL TREATMENT OF POROUS SILICON AND MODIFICATION OF ITS PHOTOLUMINESCENCE DUE TO CONTINUOUS LASER EXPOSURE
Authors: KOSTISHKO BM ORLOV AM EMELYANOVA TG
Citation: Bm. Kostishko et al., CHEMICAL TREATMENT OF POROUS SILICON AND MODIFICATION OF ITS PHOTOLUMINESCENCE DUE TO CONTINUOUS LASER EXPOSURE, Pis'ma v Zurnal tehniceskoj fiziki, 21(19), 1995, pp. 32-37
FAILURE OF MULTILAYER STRUCTURES BY PULSED CURRENT
Authors: ORLOV AM KOSTISHKO BM SKVORTSOV AA PIROGOV AV
Citation: Am. Orlov et al., FAILURE OF MULTILAYER STRUCTURES BY PULSED CURRENT, Inorganic materials, 31(5), 1995, pp. 617-620
A STUDY OF HYDROGEN GROUPS AND THEIR ARRANGEMENT IN POROUS SILICON USING AUGER-ELECTRON SPECTROSCOPY
Authors: KOSTISHKO BM ORLOV AM MIKOV SN EMELYANOVA TG
Citation: Bm. Kostishko et al., A STUDY OF HYDROGEN GROUPS AND THEIR ARRANGEMENT IN POROUS SILICON USING AUGER-ELECTRON SPECTROSCOPY, Inorganic materials, 31(4), 1995, pp. 410-412
STUDY OF THE DEPTH PROFILE OF PHOSPHORUS DIFFUSION IN SILICON BY AUGER-ELECTRON SPECTROSCOPY
Authors: KOSTISHKO BM ORLOV AM LEVKINA TG
Citation: Bm. Kostishko et al., STUDY OF THE DEPTH PROFILE OF PHOSPHORUS DIFFUSION IN SILICON BY AUGER-ELECTRON SPECTROSCOPY, Inorganic materials, 30(6), 1994, pp. 794-795
SOME ASPECTS OF ORGANIC-MOLECULES BREAKDO WN STIMULATED BY CHARGE-EXCHANGE
Authors: GUSEVA MB SHIBAEV PV KOSTISHKO BM OSHEROVICH EA TIMOFEEVA ME
Citation: Mb. Guseva et al., SOME ASPECTS OF ORGANIC-MOLECULES BREAKDO WN STIMULATED BY CHARGE-EXCHANGE, Vestnik Moskovskogo universiteta. Seria 3. Fizika, astronomia, 34(5), 1993, pp. 86-90
INTERMOLECULAR INTERACTIONS IN PROPYLOXIC YANOBIPHENYL DIMERS
Authors: SHIBAEV PV GUSEVA MB KOSTISHKO BM
Citation: Pv. Shibaev et al., INTERMOLECULAR INTERACTIONS IN PROPYLOXIC YANOBIPHENYL DIMERS, Vestnik Moskovskogo universiteta. Seria 3. Fizika, astronomia, 34(2), 1993, pp. 57-63
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