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Results: 26-31/31
Authors:
KROTKUS A
MARCINKEVICIUS S
JASINSKI J
KAMINSKA M
TAN HH
JAGADISH C
Citation: A. Krotkus et al., PICOSECOND CARRIER LIFETIME IN GAAS IMPLANTED WITH HIGH-DOSES OF AS IONS - AN ALTERNATIVE MATERIAL TO LOW-TEMPERATURE GAAS FOR OPTOELECTRONIC APPLICATIONS, Applied physics letters, 66(24), 1995, pp. 3304-3306
SUBPICOSECOND CARRIER LIFETIMES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE-TEMPERATURE
Authors:
KROTKUS A
VISELGA R
BERTULIS K
JASUTIS V
MARCINKEVICIUS S
OLIN U
Citation: A. Krotkus et al., SUBPICOSECOND CARRIER LIFETIMES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE-TEMPERATURE, Applied physics letters, 66(15), 1995, pp. 1939-1941
Authors:
ADOMAVICIUS R
KROTKUS A
ZAKAREVICIUS R
Citation: R. Adomavicius et al., ULTRAFAST OPTOELECTRONIC CHARACTERIZATION OF MICROWAVE SEMICONDUCTOR DIODES, Microwave and optical technology letters, 7(16), 1994, pp. 741-744
Authors:
KROTKUS A
PASISKEVICIUS V
LIDEIKIS T
TREIDERIS G
LESCINSKAS D
JASUTIS V
Citation: A. Krotkus et al., ULTRAFAST PHOTOCONDUCTORS FROM LOW-TEMPERATURE MOCVD-GROWN GAAS AND INGAAS EPITAXIAL LAYERS, Applied physics. A, Solids and surfaces, 58(2), 1994, pp. 177-181
Authors:
KROTKUS A
MARCINKEVICIUS S
PASISKEVICIUS V
OLIN U
Citation: A. Krotkus et al., ULTRAFAST PHOTOLUMINESCENCE DECAY IN LOW-TEMPERATURE MOCVD-GROWN INXGA1-XAS, Semiconductor science and technology, 9(7), 1994, pp. 1382-1386
Authors:
PASISKEVICIUS V
DERINGAS A
KROTKUS A
Citation: V. Pasiskevicius et al., PHOTOCURRENT NONLINEARITIES IN ULTRAFAST OPTOELECTRONIC SWITCHES, Applied physics letters, 63(16), 1993, pp. 2237-2239