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Results: 1-8 |
Results: 8
PERFECT SPATIAL ORDERING OF SELF-ORGANIZED INGAAS ALGAAS QUANTUM DISKS ON GAAS (311)B SUBSTRATE WITH SILICON-NITRIDE DOT ARRAY/
Authors: KURAMOCHI E TEMMYO J KAMADA H TAMAMURA T
Citation: E. Kuramochi et al., PERFECT SPATIAL ORDERING OF SELF-ORGANIZED INGAAS ALGAAS QUANTUM DISKS ON GAAS (311)B SUBSTRATE WITH SILICON-NITRIDE DOT ARRAY/, JPN J A P 1, 37(3B), 1998, pp. 1559-1564
PERFECT SPATIAL ORDERING OF SELF-ORGANIZED INGAAS ALGAAS BOX-LIKE STRUCTURE ARRAY ON GAAS (311)B SUBSTRATE WITH SILICON-NITRIDE DOT ARRAY (VOL 71, PG 1655, 1997)/
Authors: KURAMOCHI E TEMMYO J TAMAMURA T
Citation: E. Kuramochi et al., PERFECT SPATIAL ORDERING OF SELF-ORGANIZED INGAAS ALGAAS BOX-LIKE STRUCTURE ARRAY ON GAAS (311)B SUBSTRATE WITH SILICON-NITRIDE DOT ARRAY (VOL 71, PG 1655, 1997)/, Applied physics letters, 71(23), 1997, pp. 3448-3448
PERFECT SPATIAL ORDERING OF SELF-ORGANIZED INGAAS ALGAAS BOX-LIKE STRUCTURE ARRAY ON GAAS (311)B SUBSTRATE WITH SILICON-NITRIDE DOT ARRAY/
Authors: KURAMOCHI E TEMMYO J TAMAMURA T KAMADA H
Citation: E. Kuramochi et al., PERFECT SPATIAL ORDERING OF SELF-ORGANIZED INGAAS ALGAAS BOX-LIKE STRUCTURE ARRAY ON GAAS (311)B SUBSTRATE WITH SILICON-NITRIDE DOT ARRAY/, Applied physics letters, 71(12), 1997, pp. 1655-1657
SELF-ORGANIZATION PHENOMENON IN A STRAINED INGAAS SYSTEM AND ITS APPLICATION FOR QUANTUM DISK LASERS
Authors: TEMMYO J KURAMOCHI E SUGO M NISHIYA T NOTZEL R TAMAMURA T
Citation: J. Temmyo et al., SELF-ORGANIZATION PHENOMENON IN A STRAINED INGAAS SYSTEM AND ITS APPLICATION FOR QUANTUM DISK LASERS, IEICE transactions on electronics, E79C(11), 1996, pp. 1495-1502
SELF-ORGANIZED INGAAS QUANTUM DISK LASERS
Authors: TEMMYO J KURAMOCHI E SUGO M NISHIYA T NOTZEL R TAMAMURA T
Citation: J. Temmyo et al., SELF-ORGANIZED INGAAS QUANTUM DISK LASERS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 7-11
STRAIN EFFECTS IN INGASB ALGASB QUANTUM-WELLS GROWN BY MOLECULAR-BEAMEPITAXY/
Authors: KURAMOCHI E TAKANASHI Y
Citation: E. Kuramochi et Y. Takanashi, STRAIN EFFECTS IN INGASB ALGASB QUANTUM-WELLS GROWN BY MOLECULAR-BEAMEPITAXY/, Journal of applied physics, 77(11), 1995, pp. 5706-5711
STRAINED INGAAS QUANTUM DISK LASER WITH NANOSCALE ACTIVE-REGION FABRICATED WITH SELF-ORGANIZATION ON GAAS (311)B SUBSTRATE
Authors: TEMMYO J KURAMOCHI E SUGO M NISHIYA T NOTZEL R TAMAMURA T
Citation: J. Temmyo et al., STRAINED INGAAS QUANTUM DISK LASER WITH NANOSCALE ACTIVE-REGION FABRICATED WITH SELF-ORGANIZATION ON GAAS (311)B SUBSTRATE, Electronics Letters, 31(3), 1995, pp. 209-211
OBSERVATION OF DEEP LEVELS IN UNDOPED GASB GROWN BY MOLECULAR-BEAM EPITAXY
Authors: KURAMOCHI E KONDO N TAKANASHI Y FUJIMOTO M
Citation: E. Kuramochi et al., OBSERVATION OF DEEP LEVELS IN UNDOPED GASB GROWN BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 63(19), 1993, pp. 2664-2666
Risultati: 1-8 |