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Results:
1-12
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Results: 12
Authors:
NISHIDA Y
SAYAMA H
SHIMIZU S
KUROI T
FURUKAWA A
TERAMOTO A
UCHIDA T
INOUE Y
NISHIMURA T
Citation: Y. Nishida et al., HIGH-PERFORMANCE 0.2-MU-M DUAL-GATE COMPLEMENTARY MOS TECHNOLOGIES BYSUPPRESSION OF TRANSIENT-ENHANCED-DIFFUSION USING RAPID THERMAL ANNEALING, JPN J A P 1, 37(3B), 1998, pp. 1054-1058
Authors:
KAWASAKI Y
MURAKAMI T
KUROI T
OHNO Y
MATSUI Y
Citation: Y. Kawasaki et al., APPLICATION OF NON-MASS ANALYZED ION IMPLANTER TO SUB-QUARTER MICRON MOSFETS, Materials chemistry and physics, 54(1-3), 1998, pp. 17-22
Authors:
HASHIKAWA N
FUKUMOTO K
KUROI T
IKENO M
MASHIKO Y
Citation: N. Hashikawa et al., DIRECT OBSERVATION OF LOCAL STRAIN FIELD FOR ULSI DEVICES, Microelectronics and reliability, 38(6-8), 1998, pp. 913-917
Authors:
YASUOKA A
KUROI T
SHIMIZU S
SHIRAHATA M
OKUMURA Y
INOUE Y
INUISHI M
NISHIMURA T
MIYOSHI H
Citation: A. Yasuoka et al., THE EFFECTS ON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR PROPERTIES OF NITROGEN IMPLANTATION INTO P(+) POLYSILICON GATE, JPN J A P 1, 36(2), 1997, pp. 617-622
Authors:
TAKAKI A
UTSUMI K
KAJIKI T
KUROI T
NABESHIMA T
YANO Y
Citation: A. Takaki et al., BIFUNCTIONAL RECEPTORS - RATE ACCELERATIONS OF OXIDATIVE DECARBOXYLATION OF PYRUVATE BY THYMINE-THIAZOLIUM IN THE PRESENCE OF A MELAMINE DERIVATIVE BEARING A GUANIDINIUM ION, Chemistry Letters, (1), 1997, pp. 75-76
Authors:
MURAKAMI T
KUROI T
KAWASAKI Y
INUISHI M
MATSUI Y
YASUOKA A
Citation: T. Murakami et al., APPLICATION OF NITROGEN IMPLANTATION TO ULSI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 257-261
Authors:
SHIMIZU S
KUROI T
KUSUNOKI S
OKUMURA Y
INUISHI M
MIYOSHI H
Citation: S. Shimizu et al., IMPACT OF NITROGEN IMPLANTATION ON HIGHLY RELIABLE SUB-QUARTER-MICRONMETAL-OXIDE FIELD-EFFECT TRANSISTORS (MOSFETS) WITH LIGHTLY DOPED DRAIN STRUCTURE, JPN J A P 1, 35(2B), 1996, pp. 802-806
Authors:
YAMASHITA T
KOMORI S
KUROI T
INUISHI M
MIYOSHI H
Citation: T. Yamashita et al., SUBSTRATE ENGINEERING FOR REDUCTION OF ALPHA-PARTICLE-INDUCED CHARGE COLLECTION EFFICIENCY, JPN J A P 1, 35(2B), 1996, pp. 869-873
Authors:
SHIRAHATA M
OKUMURA Y
ABE Y
KUROI T
INUISHI M
MIYOSHI H
Citation: M. Shirahata et al., RELIABILITY OF SOURCE-TO-DRAIN NONUNIFORMLY DOPED CHANNEL (NUDC) MOSFETS FOR SUB-QUARTER-MICRON REGION, JPN J A P 1, 35(2B), 1996, pp. 874-881
Authors:
KUROI T
SHIRAHATA M
OKUMURA Y
SHIMIZU S
TERAMOTO A
ANMA M
INUISHI M
MIYOSHI H
Citation: T. Kuroi et al., CLARIFICATION OF NITRIDATION EFFECT ON OXIDE FORMATION METHODS, JPN J A P 1, 35(2B), 1996, pp. 1454-1459
Authors:
KUROI T
KOBAYASHI M
SHIRAHATA M
OKUMURA Y
KUSUNOKI S
INUISHI M
TSUBOUCHI N
Citation: T. Kuroi et al., THE IMPACT OF NITROGEN IMPLANTATION INTO HIGHLY DOPED POLYSILICON GATES FOR HIGHLY RELIABLE AND HIGH-PERFORMANCE SUB-QUARTER-MICRON DUAL-GATE COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR, JPN J A P 1, 34(2B), 1995, pp. 771-775
Authors:
KUROI T
KAWASAKI Y
ISHIGAKI Y
KINOSHITA Y
INUISHI M
TSUKAMOTO K
TSUBOUCHI N
Citation: T. Kuroi et al., BIPOLAR-TRANSISTOR WITH A BURIED LAYER FORMED BY HIGH-ENERGY ION-IMPLANTATION FOR SUBHALF-MICRON BIPOLAR-COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR LSIS, JPN J A P 1, 33(1B), 1994, pp. 541-545
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