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Results:
1-10
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Results: 10
Authors:
ARENS M
KURPAS P
RESSEL P
WEYERS M
Citation: M. Arens et al., REAL-TIME GROWTH MONITORING OF INGAAS INP-HBT STRUCTURES WITH REFLECTANCE ANISOTROPY SPECTROSCOPY/, Thin solid films, 313, 1998, pp. 609-613
Authors:
RICHTER E
KURPAS P
SATO M
TRAPP M
ZEIMER U
HAHLE S
WEYERS M
Citation: E. Richter et al., HYDROGEN IN CARBON-DOPED GAAS BASE LAYER OF GAINP GAAS HETEROJUNCTIONBIPOLAR-TRANSISTORS/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 337-340
Authors:
KURPAS P
SATO M
KNAUER A
WEYERS M
Citation: P. Kurpas et al., ONLINE GROWTH MONITORING OF INP-BASED DEVICE STRUCTURES BY REFLECTANCE ANISOTROPY SPECTROSCOPY, Journal of electronic materials, 26(10), 1997, pp. 1154-1158
Authors:
KURPAS P
OSTER A
WEYERS M
RUMBERG A
KNORR K
RICHTER W
Citation: P. Kurpas et al., FORMATION OF GAASP INTERFACE LAYERS MONITORED BY REFLECTANCE ANISOTROPY SPECTROSCOPY, Journal of electronic materials, 26(10), 1997, pp. 1159-1163
Authors:
KURPAS P
RUMBERG A
WEYERS M
KNORR K
BERGUNDE T
SATO M
RICHTER W
Citation: P. Kurpas et al., GROWTH MONITORING BY REFLECTANCE ANISOTROPY SPECTROSCOPY IN MOVPE REACTORS FOR DEVICE FABRICATION, Journal of crystal growth, 170(1-4), 1997, pp. 203-207
Authors:
KURPAS P
RICHTER E
SATO M
BRUNNER F
GUTSCHE D
WEYERS M
Citation: P. Kurpas et al., MOVPE GROWTH OF GAINP GAAS HETERO-BIPOLAR-TRANSISTORS USING CBR4 AS CARBON DOPANT SOURCE/, Journal of crystal growth, 170(1-4), 1997, pp. 442-446
Authors:
RICHTER E
KURPAS P
GUTSCHE D
WEYERS M
Citation: E. Richter et al., CARBON-DOPED GAAS GROWN IN LOW PRESSURE-METALORGANIC VAPOR-PHASE EPITAXY USING CARBON TETRABROMIDE, Journal of electronic materials, 24(11), 1995, pp. 1719-1722
Authors:
REINHARDT F
JONSSON J
ZORN M
RICHTER W
PLOSKA K
RUMBERG J
KURPAS P
Citation: F. Reinhardt et al., MONOLAYER GROWTH OSCILLATIONS AND SURFACE-STRUCTURE OF GAAS(001) DURING METALORGANIC VAPOR-PHASE EPITAXY GROWTH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2541-2546
Authors:
KURPAS P
JONSSON J
RICHTER W
GUTSCHE D
PRISTOVSEK M
ZORN M
Citation: P. Kurpas et al., EFFICIENCY OF ARSENIC AND PHOSPHORUS PRECURSORS INVESTIGATED BY REFLECTANCE ANISOTROPY SPECTROSCOPY, Journal of crystal growth, 145(1-4), 1994, pp. 36-43
Authors:
REINHARDT F
RICHTER W
MULLER AB
GUTSCHE D
KURPAS P
PLOSKA K
ROSE KC
ZORN M
Citation: F. Reinhardt et al., GAAS SURFACE CONTROL DURING METALORGANIC VAPOR-PHASE EPITAXY BY REFLECTANCE ANISOTROPY SPECTROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1427-1430
Risultati:
1-10
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