AAAAAA
Results:
1-10
|
Results: 10
Authors:
KUTZER V
STRASSBURG M
HOFFMANN A
BROSER I
POHL UW
LEDENTSOV NN
BIMBERG D
IVANOV SV
Citation: V. Kutzer et al., GAIN TO ABSORPTION CONVERSION BY INCREASING EXCITATION DENSITY IN EXCITONIC WAVE-GUIDES, Journal of crystal growth, 185, 1998, pp. 632-636
Authors:
STRASSBURG M
KUTZER V
POHL UW
HOFFMANN A
BROSER I
LEDENTSOV NN
BIMBERG D
ROSENAUER A
FISCHER U
GERTHSEN D
KRESTNIKOV IL
MAXIMOV MV
KOPEV PS
ALFEROV ZI
Citation: M. Strassburg et al., GAIN STUDIES OF (CD, ZN)SE QUANTUM ISLANDS IN A ZNSE MATRIX, Applied physics letters, 72(8), 1998, pp. 942-944
Authors:
KUTZER V
SIEGLE H
THOMSEN C
HOFFMAN A
BROSER I
Citation: V. Kutzer et al., INTENSITY-DEPENDENT HOT-PHONON RELAXATION IN ZNSE, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 46-48
Authors:
HEITZ R
MOLL E
KUTZER V
WIESMANN D
LUMMER B
HOFFMANN A
BROSER I
BAUME P
TAUDT W
SOLLNER J
HEUKEN M
Citation: R. Heitz et al., INFLUENCE OF COMPENSATION ON THE LUMINESCENCE OF NITROGEN-DOPED ZNSE EPILAYERS GROWN BY MOVPE, Journal of crystal growth, 159(1-4), 1996, pp. 307-311
Authors:
KUTZER V
LUMMER B
HEITZ R
HOFFMANN A
BROSER I
KURTZ E
HOMMEL D
Citation: V. Kutzer et al., ACCEPTOR-BOUND BIEXCITONS IN ZNSE AND CDS, Journal of crystal growth, 159(1-4), 1996, pp. 776-779
Authors:
LUMMER B
HEITZ R
KUTZER V
WAGNER JM
HOFFMANN A
BROSER I
Citation: B. Lummer et al., DEPHASING OF ACCEPTOR-BOUND EXCITONS IN II-VI SEMICONDUCTORS, Physica status solidi. b, Basic research, 188(1), 1995, pp. 493-505
Authors:
KRAUSE E
HARTMANN H
MENNINGER J
HOFFMANN A
FRICKE C
HEITZ R
LUMMER B
KUTZER V
BROSER I
Citation: E. Krause et al., INFLUENCE OF GROWTH NONSTOICHIOMETRY ON OPTICAL-PROPERTIES OF DOPED AND NON-DOPED ZNSE GROWN BY CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 138(1-4), 1994, pp. 75-80
Authors:
HOFFMANN A
HEITZ R
LUMMER B
FRICKE C
KUTZER V
BROSER I
TAUDT W
GLEITSMANN G
HEUKEN M
Citation: A. Hoffmann et al., INCORPORATION OF NITROGEN IN ZNSE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 138(1-4), 1994, pp. 379-384
Authors:
FRICKE C
HEITZ R
LUMMER B
KUTZER V
HOFFMANN A
BROSER I
TAUDT W
HEUKEN M
Citation: C. Fricke et al., TIME-RESOLVED DONOR-ACCEPTOR PAIR RECOMBINATION LUMINESCENCE IN HIGHLY N-DOPED AND P-DOPED II-VI SEMICONDUCTORS, Journal of crystal growth, 138(1-4), 1994, pp. 815-819
Authors:
HOFFMANN A
LUMMER B
ECKEY L
KUTZER V
FRICKE C
HEITZ R
BROSER I
KURTZ E
JOBST B
HOMMEL D
Citation: A. Hoffmann et al., THE INFLUENCE OF NITROGEN ON THE P-CONDUCTIVITY IN ZNSE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 138(1-4), 1994, pp. 1073-1074
Risultati:
1-10
|