Authors: ALTUKHOV PD KUZMINOV EG IVANOV GV

Citation: Pd. Altukhov et al., EXCITONS AND MULTI-EXCITON COMPLEXES BOUND TO A 2-DIMENSIONAL HOLE LAYER AT A SILICON SURFACE - THE KONDO EFFECT, THE COULOMB-BLOCKADE AND A NEGATIVE PHOTOCONDUCTIVITY, Superlattices and microstructures, 23(5), 1998, pp. 985-990

Authors: KOMPAN ME KUZMINOV EG SHABANOV IJ

Citation: Me. Kompan et al., NON-MONOTONOUS RELAXATION OF THE LUMINESCENCE INTENSITY OF POROUS SILICON, Physica scripta. T, 57(3), 1998, pp. 463-466

Authors: ALTUKHOV PD IVANOV GV KUZMINOV EG

Citation: Pd. Altukhov et al., A SELFORGANIZED DOUBLE POTENTIAL BARRIER IN TUNNELING LIGHT-EMITTING SILICON MOS STRUCTURES, Solid-state electronics, 42(9), 1998, pp. 1657-1660

Authors: ALTUKHOV PD BULGAKOV AG IVANOV GV KUZMINOV EG

Citation: Pd. Altukhov et al., BISTABLE ELECTROLUMINESCENCE OF TUNNELING SILICON MOS STRUCTURES, Solid state communications, 103(2), 1997, pp. 103-106

Authors: KOMPAN ME KUZMINOV EG KULIK VB NOVAK II BEKLEMYSHEV VI

Citation: Me. Kompan et al., OBSERVATION OF A COMPRESSED STATE OF THE QUANTUM-WIRE MATERIAL IN POROUS SILICON BY THE METHOD OF RAMAN-SCATTERING, JETP letters, 64(10), 1996, pp. 748-753