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Results: 1-25 |
Results: 25
CATHODOLUMINESCENCE OF ALN-GAN SHORT-PERIOD SUPERLATTICES
Authors: MACMILLAN MF CLEMEN LL DEVATY RP CHOYKE WJ KHAN MA KUZNIA JN KRISHNANKUTTY S
Citation: Mf. Macmillan et al., CATHODOLUMINESCENCE OF ALN-GAN SHORT-PERIOD SUPERLATTICES, Journal of applied physics, 80(4), 1996, pp. 2378-2382
VERTICAL-CAVITY STIMULATED-EMISSION FROM PHOTOPUMPED INGAN GAN HETEROJUNCTIONS AT ROOM-TEMPERATURE - COMMENT - REPLY/
Authors: KHAN MA KRISHNANKUTTY S SKOGMAN RA KUZNIA JN OLSON DT GEORGE T
Citation: Ma. Khan et al., VERTICAL-CAVITY STIMULATED-EMISSION FROM PHOTOPUMPED INGAN GAN HETEROJUNCTIONS AT ROOM-TEMPERATURE - COMMENT - REPLY/, Applied physics letters, 68(22), 1996, pp. 3198-3198
CHEMICALLY ASSISTED ION-BEAM ETCHING OF GALLIUM NITRIDE
Authors: PING AT YOUTSEY C ADESIDA I KHAN MA KUZNIA JN
Citation: At. Ping et al., CHEMICALLY ASSISTED ION-BEAM ETCHING OF GALLIUM NITRIDE, Journal of electronic materials, 24(4), 1995, pp. 229-234
A MICROSTRUCTURAL COMPARISON OF THE INITIAL GROWTH OF ALN AND GAN LAYERS ON BASAL-PLANE SAPPHIRE AND SIC SUBSTRATES BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: GEORGE T PIKE WT KHAN MA KUZNIA JN CHANGCHIEN P
Citation: T. George et al., A MICROSTRUCTURAL COMPARISON OF THE INITIAL GROWTH OF ALN AND GAN LAYERS ON BASAL-PLANE SAPPHIRE AND SIC SUBSTRATES BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of electronic materials, 24(4), 1995, pp. 241-247
OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION
Authors: GLASER ER KENNEDY TA DOVERSPIKE K ROWLAND LB GASKILL DK FREITAS JA KHAN MA OLSON DT KUZNIA JN WICKENDEN DK
Citation: Er. Glaser et al., OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION, Physical review. B, Condensed matter, 51(19), 1995, pp. 13326-13336
GATED PHOTODETECTOR BASED ON GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR/
Authors: KHAN MA SHUR MS CHEN Q KUZNIA JN SUN CJ
Citation: Ma. Khan et al., GATED PHOTODETECTOR BASED ON GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR/, Electronics Letters, 31(5), 1995, pp. 398-400
TEMPERATURE-MEDIATED PHASE SELECTION DURING GROWTH OF GAN ON (111)A AND ((1)OVER-BAR(1)OVER-BAR(1)OVER-BAR)B GAAS SUBSTRATES
Authors: YANG JW KUZNIA JN CHEN QC KHAN MA GEORGE T DEGRAEF M MAHAJAN S
Citation: Jw. Yang et al., TEMPERATURE-MEDIATED PHASE SELECTION DURING GROWTH OF GAN ON (111)A AND ((1)OVER-BAR(1)OVER-BAR(1)OVER-BAR)B GAAS SUBSTRATES, Applied physics letters, 67(25), 1995, pp. 3759-3761
TEMPERATURE ACTIVATED CONDUCTANCE IN GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS OPERATING AT TEMPERATURES UP TO 300-DEGREES-C/
Authors: KHAN MA SHUR MS KUZNIA JN CHEN Q BURM J SCHAFF W
Citation: Ma. Khan et al., TEMPERATURE ACTIVATED CONDUCTANCE IN GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS OPERATING AT TEMPERATURES UP TO 300-DEGREES-C/, Applied physics letters, 66(9), 1995, pp. 1083-1085
VIOLET-BLUE GAN HOMOJUNCTION LIGHT-EMITTING-DIODES WITH RAPID THERMALANNEALED P-TYPE LAYERS
Authors: KHAN MA CHEN Q SKOGMAN RA KUZNIA JN
Citation: Ma. Khan et al., VIOLET-BLUE GAN HOMOJUNCTION LIGHT-EMITTING-DIODES WITH RAPID THERMALANNEALED P-TYPE LAYERS, Applied physics letters, 66(16), 1995, pp. 2046-2047
CURRENT-VOLTAGE CHARACTERISTIC COLLAPSE IN ALGAN GAN HETEROSTRUCTURE INSULATED GATE FIELD-EFFECT TRANSISTORS AT HIGH DRAIN BIAS/
Authors: KHAN MA SHUR MS CHEN QC KUZNIA JN
Citation: Ma. Khan et al., CURRENT-VOLTAGE CHARACTERISTIC COLLAPSE IN ALGAN GAN HETEROSTRUCTURE INSULATED GATE FIELD-EFFECT TRANSISTORS AT HIGH DRAIN BIAS/, Electronics Letters, 30(25), 1994, pp. 2175-2176
REACTIVE ION ETCHING OF GALLIUM NITRIDE USING HYDROGEN BROMIDE PLASMAS
Authors: PING AT ADESIDA I KHAN MA KUZNIA JN
Citation: At. Ping et al., REACTIVE ION ETCHING OF GALLIUM NITRIDE USING HYDROGEN BROMIDE PLASMAS, Electronics Letters, 30(22), 1994, pp. 1895-1897
MICROWAVE PERFORMANCE OF A 0.25 MU-M GATE ALGAN GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR/
Authors: KHAN MA KUZNIA JN OLSON DT SCHAFF WJ BURM JW SHUR MS
Citation: Ma. Khan et al., MICROWAVE PERFORMANCE OF A 0.25 MU-M GATE ALGAN GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR/, Applied physics letters, 65(9), 1994, pp. 1121-1123
CHARACTERISTICS OF CHEMICALLY ASSISTED ION-BEAM ETCHING OF GALLIUM NITRIDE
Authors: ADESIDA I PING AT YOUTSEY C DOW T KHAN MA OLSON DT KUZNIA JN
Citation: I. Adesida et al., CHARACTERISTICS OF CHEMICALLY ASSISTED ION-BEAM ETCHING OF GALLIUM NITRIDE, Applied physics letters, 65(7), 1994, pp. 889-891
VERTICAL-CAVITY STIMULATED-EMISSION FROM PHOTOPUMPED INGAN GAN HETEROJUNCTIONS AT ROOM-TEMPERATURE/
Authors: KHAN MA KRISHNANKUTTY S SKOGMAN RA KUZNIA JN OLSON DT GEORGE T
Citation: Ma. Khan et al., VERTICAL-CAVITY STIMULATED-EMISSION FROM PHOTOPUMPED INGAN GAN HETEROJUNCTIONS AT ROOM-TEMPERATURE/, Applied physics letters, 65(5), 1994, pp. 520-521
LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF CUBIC GAN OVER(100)GAAS SUBSTRATES
Authors: KUZNIA JN YANG JW CHEN QC KRISHNANKUTTY S KHAN MA GEORGE T FRIETAS J
Citation: Jn. Kuznia et al., LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF CUBIC GAN OVER(100)GAAS SUBSTRATES, Applied physics letters, 65(19), 1994, pp. 2407-2409
HIGH-QUALITY ALXGA1-XN GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING TRIMETHYLAMINE ALANE AS THE ALUMINUM PRECURSOR
Authors: KHAN MA OLSON DT KUZNIA JN
Citation: Ma. Khan et al., HIGH-QUALITY ALXGA1-XN GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING TRIMETHYLAMINE ALANE AS THE ALUMINUM PRECURSOR, Applied physics letters, 65(1), 1994, pp. 64-66
ELECTRONIC-STRUCTURE, SURFACE-COMPOSITION AND LONG-RANGE ORDER IN GAN
Authors: HUNT RW VANZETTI L CASTRO T CHEN KM SORBA L COHEN PI GLADFELTER W VANHOVE JM KUZNIA JN KHAN MA FRANCIOSI A
Citation: Rw. Hunt et al., ELECTRONIC-STRUCTURE, SURFACE-COMPOSITION AND LONG-RANGE ORDER IN GAN, Physica. B, Condensed matter, 185(1-4), 1993, pp. 415-421
ELECTRON-SPIN-RESONANCE STUDIES OF DONORS IN WURTZITE GAN
Authors: CARLOS WE FREITAS JA KHAN MA OLSON DT KUZNIA JN
Citation: We. Carlos et al., ELECTRON-SPIN-RESONANCE STUDIES OF DONORS IN WURTZITE GAN, Physical review. B, Condensed matter, 48(24), 1993, pp. 17878-17884
THE NATURE OF DONOR CONDUCTION IN N-GAN
Authors: KHAN MA OLSON DT KUZNIA JN CARLOS WE FREITAS JA
Citation: Ma. Khan et al., THE NATURE OF DONOR CONDUCTION IN N-GAN, Journal of applied physics, 74(9), 1993, pp. 5901-5903
INFLUENCE OF BUFFER LAYERS ON THE DEPOSITION OF HIGH-QUALITY SINGLE-CRYSTAL GAN OVER SAPPHIRE SUBSTRATES
Authors: KUZNIA JN KHAN MA OLSON DT KAPLAN R FREITAS J
Citation: Jn. Kuznia et al., INFLUENCE OF BUFFER LAYERS ON THE DEPOSITION OF HIGH-QUALITY SINGLE-CRYSTAL GAN OVER SAPPHIRE SUBSTRATES, Journal of applied physics, 73(9), 1993, pp. 4700-4702
HIGH-ELECTRON-MOBILITY TRANSISTOR BASED ON A GAN-ALXGA1-XN HETEROJUNCTION
Authors: KHAN MA BHATTARAI A KUZNIA JN OLSON DT
Citation: Ma. Khan et al., HIGH-ELECTRON-MOBILITY TRANSISTOR BASED ON A GAN-ALXGA1-XN HETEROJUNCTION, Applied physics letters, 63(9), 1993, pp. 1214-1215
GAN ALN DIGITAL ALLOY SHORT-PERIOD SUPERLATTICES BY SWITCHED ATOMIC LAYER METALORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors: KHAN MA KUZNIA JN OLSON DT GEORGE T PIKE WT
Citation: Ma. Khan et al., GAN ALN DIGITAL ALLOY SHORT-PERIOD SUPERLATTICES BY SWITCHED ATOMIC LAYER METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Applied physics letters, 63(25), 1993, pp. 3470-3472
REACTIVE ION ETCHING OF GALLIUM NITRIDE IN SILICON TETRACHLORIDE PLASMAS
Authors: ADESIDA I MAHAJAN A ANDIDEH E KHAN MA OLSEN DT KUZNIA JN
Citation: I. Adesida et al., REACTIVE ION ETCHING OF GALLIUM NITRIDE IN SILICON TETRACHLORIDE PLASMAS, Applied physics letters, 63(20), 1993, pp. 2777-2779
OBSERVATION OF OPTICALLY DETECTED MAGNETIC-RESONANCE IN GAN FILMS
Authors: GLASER ER KENNEDY TA CROOKHAM HC FREITAS JA KHAN MA OLSON DT KUZNIA JN
Citation: Er. Glaser et al., OBSERVATION OF OPTICALLY DETECTED MAGNETIC-RESONANCE IN GAN FILMS, Applied physics letters, 63(19), 1993, pp. 2673-2675
SCHOTTKY-BARRIER PHOTODETECTOR BASED ON MG-DOPED P-TYPE GAN FILMS
Authors: KHAN MA KUZNIA JN OLSON DT BLASINGAME M BHATTARAI AR
Citation: Ma. Khan et al., SCHOTTKY-BARRIER PHOTODETECTOR BASED ON MG-DOPED P-TYPE GAN FILMS, Applied physics letters, 63(18), 1993, pp. 2455-2456
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