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Results: 1-25/71
Authors:
Shon, Y
Kwon, YH
Kim, DY
Fan, X
Fu, D
Kang, TW
Citation: Y. Shon et al., Magnetic characteristic of Mn+ ion implanted GaN epilayer, JPN J A P 1, 40(9A), 2001, pp. 5304-5305
Authors:
Shon, Y
Yuldashev, SU
Fan, XJ
Fu, DJ
Kwon, YH
Hong, CY
Kang, TW
Citation: Y. Shon et al., Photo-enhanced magnetoresistance effect in GaAs with nanoscale magnetic clusters, JPN J A P 1, 40(5A), 2001, pp. 3082-3084
Authors:
Lee, HG
Kang, TW
Hong, SU
Paek, MC
Kim, TW
Citation: Hg. Lee et al., Crystallization of 3C-SiC (111) thin films grown on Si (111) substrates bypost thermal annealing, JPN J A P 1, 40(11), 2001, pp. 6304-6306
Authors:
Fu, DJ
Yuldashev, SU
Kim, NH
Ryu, YS
Yun, JS
Park, SH
Kang, TW
Chung, KS
Citation: Dj. Fu et al., A study of photoelectrochemical oxidation of GaN epilayers by extrinsic photoconductivity, JPN J A P 2, 40(1AB), 2001, pp. L10-L12
Authors:
Kang, TW
Chung, YC
Won, SH
Kim, HT
Citation: Tw. Kang et al., Interlaboratory comparison of radiated emission measurements using a spherical dipole radiator, IEE P-SCI M, 148(1), 2001, pp. 35-40
Authors:
Choo, DK
Lee, SH
Moon, HK
Kang, TW
Citation: Dk. Choo et al., Analysis and prevention of cracking during strip casting of AISI 304 stainless steel, MET MAT T A, 32(9), 2001, pp. 2249-2258
Authors:
Kim, HM
Oh, JE
Kang, TW
Citation: Hm. Kim et al., Nonuniformities in free-standing GaN substrates, MAT SCI E B, 79(1), 2001, pp. 16-19
Authors:
Lee, HY
Kang, TW
Kim, TW
Citation: Hy. Lee et al., Temperature dependence of the optical properties in p-Cd0.96Zn0.04Te single crystals, J MATER RES, 16(8), 2001, pp. 2196-2199
Authors:
Kim, N
Lee, SJ
Kang, TW
Kim, MJ
Ihm, G
Sim, HS
Chang, KJ
Citation: N. Kim et al., Electronic properties of electromagnetic quantum structures, J KOR PHYS, 39(3), 2001, pp. 501-505
Authors:
Jeon, HC
Kang, TW
Kim, TW
Citation: Hc. Jeon et al., Improvement of the surface stability of indium-doped Hg0.8Cd0.2Te epitaxial layers grown on p-Cd0.96Zn0.04Te substrates by photochemical passivation, J MAT SCI L, 20(3), 2001, pp. 249-251
Authors:
Jeon, HC
Kang, TW
Kim, TW
Citation: Hc. Jeon et al., Effects of passivation treatment on the surface stability in indium-doped Hg0.8Cd0.2Te epilayers grown on p-Cd0.96Zn0.04Te substrates, APPL SURF S, 180(3-4), 2001, pp. 209-213
Authors:
Kang, TW
Park, CS
Kim, TW
Citation: Tw. Kang et al., The origins of the DX center formation in unintentionally doped GaN epilayers grown on sapphire substrates, APPL SURF S, 180(1-2), 2001, pp. 81-86
Authors:
Kim, HM
Kang, TW
Citation: Hm. Kim et Tw. Kang, Cathodoluminescence characteristics of InGaN/GaN quantum wells grown by MOCVD, MATER LETT, 48(5), 2001, pp. 263-268
Authors:
Kim, HM
Oh, JE
Kang, TW
Citation: Hm. Kim et al., Preparation of large area free-standing GaN substrates by HVPE using mechanical polishing liftoff method, MATER LETT, 47(4-5), 2001, pp. 276-280
Authors:
Kim, N
Ihm, G
Sim, HS
Kang, TW
Citation: N. Kim et al., Modified magnetic quantum dot with electric confining potentials - art. no. 235317, PHYS REV B, 6323(23), 2001, pp. 5317
Authors:
Kang, TW
Oh, JE
Citation: Tw. Kang et Je. Oh, Abnormal temperature-dependent photoluminescence characteristics of stacked InAs self-assembled quantum dot structures grown by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 1039-1043
Authors:
Park, CJ
Kim, HB
Lee, YH
Kim, DY
Kang, TW
Hong, CY
Cho, HY
Kim, MD
Citation: Cj. Park et al., Deep level defects of InAs quantum dots grown on GaAs by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 1057-1061
Authors:
Yuldashev, SU
Shon, Y
Kwon, YH
Fu, DJ
Kim, DY
Kim, HJ
Kang, TW
Fan, X
Citation: Su. Yuldashev et al., Enhanced positive magnetoresistance effect in GaAs with nanoscale magneticclusters, J APPL PHYS, 90(6), 2001, pp. 3004-3006
Authors:
Yoon, KS
Park, JH
Choi, JH
Yang, JY
Lee, CH
Kim, CO
Hong, JP
Kang, TW
Citation: Ks. Yoon et al., Performance of Co/Al2O3/NiFe magnetic tunnel junctions prepared by a two-step rf plasma oxidation method, APPL PHYS L, 79(8), 2001, pp. 1160-1162
Authors:
Fu, DJ
Kang, TW
Yuldashev, SU
Kim, NH
Park, SH
Yun, JS
Chung, KS
Citation: Dj. Fu et al., Effect of photoelectrochemical oxidation on properties of GaN epilayers grown by molecular beam epitaxy, APPL PHYS L, 78(9), 2001, pp. 1309-1311
Authors:
Lee, HG
Jeon, HC
Kang, TW
Kim, TW
Citation: Hg. Lee et al., Gallium arsenide crystalline nanorods grown by molecular-beam epitaxy, APPL PHYS L, 78(21), 2001, pp. 3319-3321
Authors:
Yuldashev, SU
Kang, TW
Jung, OH
Kwak, MY
Kim, NH
Ryu, YS
Kim, DY
Kim, TW
Chung, KS
Citation: Su. Yuldashev et al., Annealing effect on passivated deep levels in GaN epilayers, JPN J A P 1, 39(9A), 2000, pp. 5044-5047
Authors:
Kang, TW
Chi, CS
Park, SH
Kim, TW
Citation: Tw. Kang et al., Effects of thermal annealing on the Au/Ni and the Au/Ni/Si/Ni contact properties of p-type GaN epilayers, JPN J A P 1, 39(3A), 2000, pp. 1062-1065
Authors:
Kang, TW
Yuldashev, SU
Kim, DY
Kim, TW
Citation: Tw. Kang et al., Effects of hydrogenation and annealing on the deep levels in GaN epilayersgrown on sapphire substrates, JPN J A P 2, 39(1AB), 2000, pp. L25-L27
Authors:
Jung, WH
Kang, TW
Kim, TW
Chung, KS
Citation: Wh. Jung et al., Activation energy, capture cross section, and emission frequency of the trap level in unintentionally doped n-type GaN epilayers grown on sapphire substrates in a nitrogen-rich atmosphere, JPN J A P 2, 39(11A), 2000, pp. L1084-L1086