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Results:
1-7
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Results: 7
Authors:
Ragnarsson, LA
Guha, S
Bojarczuk, NA
Cartier, E
Fischetti, MV
Rim, K
Karasinski, J
Citation: La. Ragnarsson et al., Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates, IEEE ELEC D, 22(10), 2001, pp. 490-492
Authors:
Guha, S
Cartier, E
Bojarczuk, NA
Bruley, J
Gignac, L
Karasinski, J
Citation: S. Guha et al., High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactiveatomic-beam deposition, J APPL PHYS, 90(1), 2001, pp. 512-514
Authors:
Ragnarsson, LA
Guha, S
Copel, M
Cartier, E
Bojarczuk, NA
Karasinski, J
Citation: La. Ragnarsson et al., Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal-oxide-semiconductor field-effect transistors: Effective electron mobility, APPL PHYS L, 78(26), 2001, pp. 4169-4171
Authors:
Karasinski, J
Semik, D
Kilarski, W
Citation: J. Karasinski et al., Connexin43 in porcine myocardium and non-pregnant myometrium, TISSUE CELL, 32(2), 2000, pp. 133-140
Authors:
Kim, DJ
Ryu, DY
Bojarczuk, NA
Karasinski, J
Guha, S
Lee, SH
Lee, JH
Citation: Dj. Kim et al., Thermal activation energies of Mg in GaN : Mg measured by the Hall effect and admittance spectroscopy, J APPL PHYS, 88(5), 2000, pp. 2564-2569
Authors:
Guha, S
Gupta, A
Bojarczuk, NA
Karasinski, J
Citation: S. Guha et al., Transplanted Si films on arbitrary substrates using GaN underlayers, APPL PHYS L, 76(10), 2000, pp. 1264-1266
Authors:
Kim, DJ
Ryu, DY
Kim, KH
Bojarczuk, NA
Karasinski, J
Guha, S
Lee, HG
Citation: Dj. Kim et al., Admittance spectroscopy of Mg-doped GaN grown by molecular beam epitaxy using RF nitrogen sources, J KOR PHYS, 34, 1999, pp. S261-S264
Risultati:
1-7
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