Citation: K. Sato et H. Katayama-yoshida, Materials design of transparent and half-metallic ferromagnets in V- or Cr-doped ZnS, ZnSe and ZnTe without P- or N-type doping treatment, JPN J A P 2, 40(7A), 2001, pp. L651-L653
Citation: K. Sato et H. Katayama-yoshida, Material design of GaN-based ferromagnetic diluted magnetic semiconductors, JPN J A P 2, 40(5B), 2001, pp. L485-L487
Citation: K. Sato et H. Katayama-yoshida, Stabilization of ferromagnetic states by electron doping in Fe-, Co- or Ni-doped ZnO, JPN J A P 2, 40(4A), 2001, pp. L334-L336
Citation: H. Ohno et H. Katayama-yoshida, Proceedings of the First International Conference on the Physics and Applications of Spin-Related Phenomena in Semiconductors - PASPS 2000 - Held in Sendai, Japan - 13-15 September 2000 - Foreword, PHYSICA E, 10(1-3), 2001, pp. VII-VII
Authors:
Katayama-Yoshida, H
Nishimatsu, T
Yamamoto, T
Orita, N
Citation: H. Katayama-yoshida et al., Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN, p-type AlN and n-type diamond: prediction versus experiment, J PHYS-COND, 13(40), 2001, pp. 8901-8914
Authors:
Nishimatsu, T
Katayama-Yoshida, H
Orita, N
Citation: T. Nishimatsu et al., Theoretical study of hydrogen-related complexes in diamond for low-resistive n-type diamond semiconductor, PHYSICA B, 302, 2001, pp. 149-154
Citation: T. Kawasaki et H. Katayama-yoshida, Valence control method of co-doping for the fabrication of metallic silicon from the first-principles calculations, PHYSICA B, 302, 2001, pp. 163-165
Citation: H. Katayama-yoshida et al., Proceedings of the Yamada Conference LIV - The 9th International Conference on Shallow-Level Centers in Semiconductors - SLCS-9 - held in Awaji Island, Hyogo, Japan 24-27 September 2000 - Preface, PHYSICA B, 302, 2001, pp. VII-VII
Citation: H. Katayama-yoshida et al., New valence control and spin control method in GaN and AlN by codoping andtransition atom doping, J CRYST GR, 231(3), 2001, pp. 428-436
Citation: K. Sato et H. Katayama-yoshida, Material design for transparent ferromagnets with ZnO-based magnetic semiconductors, JPN J A P 2, 39(6B), 2000, pp. L555-L558
Authors:
Tanaka, H
Harima, H
Yamamoto, T
Katayama-Yoshida, H
Nakata, Y
Hirotsu, Y
Citation: H. Tanaka et al., Electronic band structure and magnetism of Fe16N2 calculated by the FLAPW method, PHYS REV B, 62(22), 2000, pp. 15042-15046
Citation: K. Shirai et H. Katayama-yoshida, Effects of the geometries of boron-rich crystals on the lattice dynamics, J SOL ST CH, 154(1), 2000, pp. 20-25
Citation: T. Yamamoto et H. Katayama-yoshida, Unipolarity of ZnO with a wide-band gap and its solution using codoping method, J CRYST GR, 214, 2000, pp. 552-555
Citation: T. Yamamoto et H. Katayama-yoshida, Solution using a codoping method to unipolarity for the fabrication of p-type ZnO, JPN J A P 2, 38(2B), 1999, pp. L166-L169
Citation: T. Yamamoto et H. Katayama-yoshida, Effects of oxygen incorporation in p-type AlN crystals doped with carbon species, PHYSICA B, 274, 1999, pp. 113-115
Authors:
Yamamoto, T
Luck, IV
Scheer, R
Katayama-Yoshida, H
Citation: T. Yamamoto et al., Differences in the electronic structure and compensation mechanism betweenn-type Zn- and Cd-doped CuInS2 crystals, PHYSICA B, 274, 1999, pp. 927-929
Authors:
Katayama-Yoshida, H
Nishimatsu, T
Yamamoto, T
Orita, N
Citation: H. Katayama-yoshida et al., Comparison between the theoretical prediction of codoping and the recent experimental evidences in p-type GaN, AlN, ZnSe, CuInS2 and n-type diamond, PHYS ST S-B, 210(2), 1998, pp. 429-436
Citation: K. Shirai et H. Katayama-yoshida, The narrow Raman linewidth of a librational mode of alpha-rhombohedral boron and its anharmonic effects, J PHYS JPN, 67(11), 1998, pp. 3801-3808