Citation: Oa. Golikova et Mm. Kazanin, Special features of photoelectric properties of nanostructured films of hydrogenated silicon, SEMICONDUCT, 35(10), 2001, pp. 1187-1190
Authors:
Golikova, OA
Kazanin, MM
Kuznetsov, AN
Bogdanova, EV
Citation: Oa. Golikova et al., Nanostructured a-Si : H films obtained by silane decomposition in a magnetron chamber, SEMICONDUCT, 34(9), 2000, pp. 1085-1089
Authors:
Terukov, EI
Kazanin, MM
Kon'kov, OI
Kudoyarova, VK
Kougiya, KV
Nikulin, YA
Kazanskii, AG
Citation: Ei. Terukov et al., The influence of erbium on electrical and photoelectric properties of amorphous silicon produced by radio-frequency silane decomposition, SEMICONDUCT, 34(7), 2000, pp. 829-834
Citation: Oa. Golikova et Mm. Kazanin, Effect of nanocrystalline inclusions on the photosensitivity of amorphous hydrogenated silicon films, SEMICONDUCT, 34(6), 2000, pp. 737-740
Citation: Oa. Golikova et Mm. Kazanin, Electronic properties and structure of a-Si : H films with higher photosensitivity, SEMICONDUCT, 33(3), 1999, pp. 335-338