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Results:
1-12
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Results: 12
Authors:
Recio, T
Kerber, M
Citation: T. Recio et M. Kerber, Special issue on computer algebra and mechanized reasoning: Selected St. Andrews' ISSAC/Calculemus 2000 contributions - Foreword, J SYMB COMP, 32(1-2), 2001, pp. 1-2
Authors:
Innertsberger, G
Pompl, T
Kerber, M
Citation: G. Innertsberger et al., The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices, MICROEL REL, 41(7), 2001, pp. 973-975
Authors:
Schwalke, U
Polzl, M
Sekinger, T
Kerber, M
Citation: U. Schwalke et al., Ultra-thick gate oxides: charge generation and its impact on reliability, MICROEL REL, 41(7), 2001, pp. 1007-1010
Authors:
Diestel, G
Martin, A
Kerber, M
Schlemm, A
Erlenmaier, H
Murr, B
Preussger, A
Citation: G. Diestel et al., Quality assessment of thin oxides using constant and ramped stress measurements, MICROEL REL, 41(7), 2001, pp. 1019-1022
Authors:
Pompl, T
Engel, C
Wurzer, H
Kerber, M
Citation: T. Pompl et al., Soft breakdown and hard breakdown in ultra-thin oxides, MICROEL REL, 41(4), 2001, pp. 543-551
Authors:
Martin, A
Kerber, M
Preussger, A
Citation: A. Martin et al., Assessing oxide reliability targets with fast WLR measurements, MICROEL REL, 40(4-5), 2000, pp. 731-734
Authors:
Pompl, T
Wurzer, H
Kerber, M
Eisele, I
Citation: T. Pompl et al., Influence of gate oxide breakdown on MOSFET device operation, MICROEL REL, 40(1), 2000, pp. 37-47
Authors:
Mattausch, HJ
Baumgartner, H
Allinger, R
Kerber, M
Braun, H
Citation: Hj. Mattausch et al., Electrical/thermal properties of nonplanar polyoxides and the consequent effects for EEPROM cell operation, IEEE DEVICE, 47(6), 2000, pp. 1251-1257
Authors:
Schwalke, U
Gschwandtner, A
Innertsberger, G
Kerber, M
Citation: U. Schwalke et al., Through-the-gate-implanted ultrathin gate oxide MOSFET's with corner parasitics-free shallow-trench-isolation, IEEE ELEC D, 20(7), 1999, pp. 363-365
Authors:
Kerber, M
Schwalke, U
Innertsberger, G
Citation: M. Kerber et al., Evidence for spatial distribution of traps in MOS systems after Fowler Nordheim stress, MICROEL ENG, 48(1-4), 1999, pp. 147-150
Authors:
Kerber, M
Citation: M. Kerber, Assessment of worst case dielectric failure rate based on statistical samples with pure intrinsic failure distributions, MICROEL REL, 39(6-7), 1999, pp. 755-758
Authors:
Huang, XR
Kerber, M
Cheikhrouhou, L
Citation: Xr. Huang et al., Adaptation of declaratively represented methods in proof planning, ANN MATH A, 23(3-4), 1998, pp. 299-320
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