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Results: 1-25 |
Results: 25
High performance modules of 2.5 Gbps modulator integrated DFB lasers usingnew RF impedance matching technique
Authors: Lee, SH Ahn, JH Oh, YK Ma, JS Choo, AG Kim, TI Kim, Y Jeong, J
Citation: Sh. Lee et al., High performance modules of 2.5 Gbps modulator integrated DFB lasers usingnew RF impedance matching technique, IEEE T AD P, 24(3), 2001, pp. 407-410
Helicobacter pylori infection in Korea
Authors: Park, IS Lee, YC Park, HJ Kim, TI Lee, SI Kim, H Chung, KS Lee-Kim, YC
Citation: Is. Park et al., Helicobacter pylori infection in Korea, YONSEI MED, 42(4), 2001, pp. 457-470
Investigations of floating guard structures in a planar InGaAs/InGaAsP/InPavalanche photodiode
Authors: Cho, SR Yang, SK Ma, JS Yu, JS Lee, SD Choo, AG Kim, TI
Citation: Sr. Cho et al., Investigations of floating guard structures in a planar InGaAs/InGaAsP/InPavalanche photodiode, J KOR PHYS, 38(3), 2001, pp. 182-185
The characteristic calculation of carboxylic ion exchanger
Authors: Son, WK Kim, TI Kim, SH Park, SG Chung, JH
Citation: Wk. Son et al., The characteristic calculation of carboxylic ion exchanger, B KOR CHEM, 22(6), 2001, pp. 559-564
Prolonged activation of mitogen-activated protein kinases during NSAID-induced apoptosis in HT-29 colon cancer cells
Authors: Kim, TI Jin, SH Kim, WH Kang, EH Choi, KY Kim, HJ Shin, SK Kang, JK
Citation: Ti. Kim et al., Prolonged activation of mitogen-activated protein kinases during NSAID-induced apoptosis in HT-29 colon cancer cells, INT J COL R, 16(3), 2001, pp. 167-173
Normal incidence infrared photoconductor of self-assembled InAs quantum dots in modulation doped AlGaAs/GaAs heterostructures
Authors: Kim, MD Choo, AG Kim, TI Ko, SS Baek, DH Hong, SC
Citation: Md. Kim et al., Normal incidence infrared photoconductor of self-assembled InAs quantum dots in modulation doped AlGaAs/GaAs heterostructures, J CRYST GR, 227, 2001, pp. 1162-1165
Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode
Authors: Cho, SR Yang, SK Ma, JA Lee, SD Yu, JS Choo, AG Kim, TI Burm, J
Citation: Sr. Cho et al., Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode, IEEE PHOTON, 12(5), 2000, pp. 534-536
Calculation on ion exchange capacity for an ion exchanger using the potentiometric titration
Authors: Son, WK Kim, SH Kim, TI
Citation: Wk. Son et al., Calculation on ion exchange capacity for an ion exchanger using the potentiometric titration, J POL SC PP, 38(23), 2000, pp. 3181-3188
Magnetized inductively coupled plasma etching of GaN in Cl-2/BCl3 plasmas
Authors: Lee, YH Sung, YJ Yeom, GY Lee, JW Kim, TI
Citation: Yh. Lee et al., Magnetized inductively coupled plasma etching of GaN in Cl-2/BCl3 plasmas, J VAC SCI A, 18(4), 2000, pp. 1390-1394
Photoluminescence study of InGaN/GaN double quantum wells with varying barrier widths
Authors: Ryu, MY Yu, PW Shin, EJ Lee, JI Yu, SK Oh, ES Park, YJ Park, HS Kim, TI
Citation: My. Ryu et al., Photoluminescence study of InGaN/GaN double quantum wells with varying barrier widths, J KOR PHYS, 37(4), 2000, pp. 387-390
Photoluminescence and photoreflectance measurements on InGaN/GaN structures
Authors: Ryu, MY Yu, PW Kim, JS Shin, EJ Lee, JI Yu, SK Oh, ES Park, YJ Park, HS Kim, TI
Citation: My. Ryu et al., Photoluminescence and photoreflectance measurements on InGaN/GaN structures, J KOR PHYS, 37(3), 2000, pp. 300-303
Effects of plasma conditions on the etch properties of AlGaN
Authors: Kim, HS Lee, DH Lee, JW Kim, TI Yeom, GY
Citation: Hs. Kim et al., Effects of plasma conditions on the etch properties of AlGaN, VACUUM, 56(1), 2000, pp. 45-49
Origin of hexagonal-shaped etch pits formed in (0001) GaN films
Authors: Hong, SK Yao, T Kim, BJ Yoon, SY Kim, TI
Citation: Sk. Hong et al., Origin of hexagonal-shaped etch pits formed in (0001) GaN films, APPL PHYS L, 77(1), 2000, pp. 82-84
Duplexer using microwave photonic band gap structure
Authors: Oh, SS Kee, CS Kim, JE Park, HY Kim, TI Park, I Lim, H
Citation: Ss. Oh et al., Duplexer using microwave photonic band gap structure, APPL PHYS L, 76(16), 2000, pp. 2301-2303
InGaN/GaN multi-quantum well distributed Bragg reflector laser diode
Authors: Cho, JH Cho, S Kim, BJ Chae, S Sone, C Nam, OH Lee, JW Park, Y Kim, TI
Citation: Jh. Cho et al., InGaN/GaN multi-quantum well distributed Bragg reflector laser diode, APPL PHYS L, 76(12), 2000, pp. 1489-1491
Spot-size converter integrated polarization insensitive semiconductor optical amplifiers
Authors: Kim, JR Lee, JS Park, S Park, MW Yu, JS Lee, SD Choo, AG Kim, TI Lee, YH
Citation: Jr. Kim et al., Spot-size converter integrated polarization insensitive semiconductor optical amplifiers, IEEE PHOTON, 11(8), 1999, pp. 967-969
Characteristics of inductively coupled Cl-2/BCl3 plasmas during GaN etching
Authors: Kim, HS Yeom, GY Lee, JW Kim, TI
Citation: Hs. Kim et al., Characteristics of inductively coupled Cl-2/BCl3 plasmas during GaN etching, J VAC SCI A, 17(4), 1999, pp. 2214-2219
Facet formation of a GaN-based device using chemically assisted ion beam etching with a photoresist mask
Authors: Lee, WJ Kim, HS Yeom, GY Lee, JW Kim, TI
Citation: Wj. Lee et al., Facet formation of a GaN-based device using chemically assisted ion beam etching with a photoresist mask, J VAC SCI A, 17(4), 1999, pp. 1230-1234
Optical transitions in InGaN/GaN double heterostructures
Authors: Ryu, MY Yu, PW Shin, EJ Song, NW Lee, JI Kim, D Oh, ES Park, YJ Park, HS Kim, TI
Citation: My. Ryu et al., Optical transitions in InGaN/GaN double heterostructures, J KOR PHYS, 35, 1999, pp. S1021-S1024
Spot size converter integrated polarization insensitive semiconductor optical amplifiers
Authors: Lee, JS Kim, JR Park, SS Park, MW Yu, JS Lee, SD Choo, AG Kim, TI
Citation: Js. Lee et al., Spot size converter integrated polarization insensitive semiconductor optical amplifiers, J KOR PHYS, 34, 1999, pp. S277-S280
1550 nm polarization insensitive laterally tapered travelling-wave semiconductor laser amplifiers with a narrow circular beam divergence
Authors: Kim, JR Lee, JS Park, SS Park, MW Yu, JS Lee, SD Choo, AG Kim, TI Lee, YH
Citation: Jr. Kim et al., 1550 nm polarization insensitive laterally tapered travelling-wave semiconductor laser amplifiers with a narrow circular beam divergence, J KOR PHYS, 34, 1999, pp. S281-S283
Fabrication of 1.3 mu m strained InGaAsP InGaAsP MQW SSC-LD by selective area MOCVD growth
Authors: Kim, TJ Ji, JK Keh, YC Kim, HS Lee, SD Choo, AG Kim, TI
Citation: Tj. Kim et al., Fabrication of 1.3 mu m strained InGaAsP InGaAsP MQW SSC-LD by selective area MOCVD growth, J KOR PHYS, 34, 1999, pp. S315-S317
A study of GaN etch mechanisms using inductively coupled Cl-2/Ar plasmas
Authors: Kim, HS Yeom, GY Lee, JW Kim, TI
Citation: Hs. Kim et al., A study of GaN etch mechanisms using inductively coupled Cl-2/Ar plasmas, THIN SOL FI, 341(1-2), 1999, pp. 180-183
Etch properties of gallium nitride using chemically assisted ion beam etching (CAIBE)
Authors: Lee, WJ Kim, HS Lee, JW Kim, TI Yeom, GY
Citation: Wj. Lee et al., Etch properties of gallium nitride using chemically assisted ion beam etching (CAIBE), JPN J A P 1, 37(12B), 1998, pp. 7006-7009
Localized excitons in InxGa1-xN/GaN quantum well structure
Authors: Ryu, MY Song, JH Park, SW Yu, PW Oh, ES Park, YJ Park, HS Kim, TI
Citation: My. Ryu et al., Localized excitons in InxGa1-xN/GaN quantum well structure, J KOR PHYS, 33, 1998, pp. S316-S318
Risultati: 1-25 |