Authors: Kinsey, GS Campbell, JC Dentai, AG

Citation: Gs. Kinsey et al., Waveguide avalanche photodiode operating at 1.55 mu m with a gain-bandwidth product of 320 GHz, IEEE PHOTON, 13(8), 2001, pp. 842-844

Authors: Zheng, XG Sun, X Wang, S Kinsey, GS Holmes, AL Streetman, BG Campbell, JC

Citation: Xg. Zheng et al., Multiplication noise of AlxGa1-xAs avalanche photodiodes with high Al concentration and thin multiplication region, APPL PHYS L, 78(24), 2001, pp. 3833-3835

Authors: Kinsey, GS Hansing, CC Holmes, AL Streetman, BG Campbell, JC Dentai, AG

Citation: Gs. Kinsey et al., Waveguide In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode, IEEE PHOTON, 12(4), 2000, pp. 416-418

Authors: Zheng, XG Yuan, P Sun, X Kinsey, GS Holmes, AL Streetman, BG Campbell, JC

Citation: Xg. Zheng et al., Temperature dependence of the ionization coefficients of AlxGa1-xAs, IEEE J Q EL, 36(10), 2000, pp. 1168-1173

Authors: Kinsey, GS Gotthold, DW Holmes, AL Campbell, JC

Citation: Gs. Kinsey et al., GaNAs resonant-cavity avalanche photodiode operating at 1.064 mu m, APPL PHYS L, 77(10), 2000, pp. 1543-1544

Authors: Kinsey, GS Gotthold, DW Holmes, AL Streetman, BG Campbell, JC

Citation: Gs. Kinsey et al., GaNAs avalanche photodiode operating at 0.94 mu m, APPL PHYS L, 76(20), 2000, pp. 2824-2825