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Results:
1-17
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Results: 17
Authors:
Kusakabe, K
Kikuchi, A
Kishino, K
Citation: K. Kusakabe et al., Characterization of overgrown GaN layers on nano-columns grown by RF-molecular beam epitaxy, JPN J A P 2, 40(3A), 2001, pp. L192-L194
Authors:
Kikuchi, A
Yamada, T
Nakamura, S
Kusakabe, K
Sugihara, D
Kishino, K
Citation: A. Kikuchi et al., Improvement of electrical property and surface morphology of GaN grown by RF-plasma assisted molecular beam epitaxy by introduction of multiple AlN intermediate layer, MAT SCI E B, 82(1-3), 2001, pp. 12-15
Authors:
Kusakabe, K
Kishino, K
Kikuchi, A
Yamada, T
Sugihara, D
Nakamura, S
Citation: K. Kusakabe et al., Reduction of threading dislocations in migration enhanced epitaxy grown GaN with N-polarity by use of AlN multiple interlayer, J CRYST GR, 230(3-4), 2001, pp. 387-391
Authors:
Takizawa, M
Nomura, I
Che, SB
Kikuchi, A
Shimomura, K
Kishino, K
Citation: M. Takizawa et al., MBE growth of BeZnCdSe quaternaries, MgSe/BeZnCdSe superlattice and quantum well structures on InP substrates, J CRYST GR, 227, 2001, pp. 660-664
Authors:
Kikuchi, A
Yamada, T
Nakamura, S
Kusakabe, K
Sugihara, D
Kishino, K
Citation: A. Kikuchi et al., Improvement of crystal quality of rf-plasma-assisted molecular beam epitaxy grown Ga-polarity GaN by high-temperature grown AlN multiple intermediatelayers, JPN J A P 2, 39(4B), 2000, pp. L330-L333
Authors:
Sugihara, D
Kikuchi, A
Kusakabe, K
Nakamura, S
Toyoura, Y
Yamada, T
Kishino, K
Citation: D. Sugihara et al., High-quality GaN on AlN multiple intermediate layer with migration enhanced epitaxy by rf-molecular beam epitaxy, JPN J A P 2, 39(3AB), 2000, pp. L197-L199
Authors:
Hanyu, K
Kishino, K
Yamashita, H
Hayashi, C
Citation: K. Hanyu et al., Linkage between recycling and consumption: a case of toilet paper in Japan, RESOUR CON, 30(3), 2000, pp. 177-199
Authors:
Takada, T
Che, SB
Nomura, I
Kikuchi, A
Shimomura, K
Kishino, K
Citation: T. Takada et al., Novel II-VI light emitting diodes fabricated on InP substrates applying wide-gap and highly p-dopable BeZnTe for p-cladding layers, PHYS ST S-A, 180(1), 2000, pp. 37-43
Authors:
Sugihara, D
Kikuchi, A
Kusakabe, K
Nakamura, S
Toyoura, Y
Yamada, T
Kishino, K
Citation: D. Sugihara et al., Suppression of inversion domains and decrease of threading dislocations inmigration enhanced epitaxial GaN by RF-molecular beam epitaxy, PHYS ST S-A, 180(1), 2000, pp. 65-71
Authors:
Che, SB
Nomura, I
Shinozaki, W
Kikuchi, A
Shimomura, K
Kishino, K
Citation: Sb. Che et al., Wide bandgap over 3 eV and high p-doping BeZnTe grown on InP substrates bymolecular beam epitaxy, J CRYST GR, 214, 2000, pp. 321-324
Authors:
Shinozaki, W
Nomura, I
Shimbo, H
Hattori, H
Sano, T
Che, SB
Kikuchi, A
Shimomura, K
Kishino, K
Citation: W. Shinozaki et al., Growth and characterization of nitrogen-doped MgSe/ZnSeTe superlattice quasi-quaternary on InP substrates and fabrication of light emitting diodes, JPN J A P 1, 38(4B), 1999, pp. 2598-2602
Authors:
Kushi, K
Sasamoto, H
Sugihara, D
Nakamura, S
Kikuchi, A
Kishino, K
Citation: K. Kushi et al., High speed growth of device quality GaN and InGaN by RF-MBE, MAT SCI E B, 59(1-3), 1999, pp. 65-68
Authors:
Hangleiter, A
Duboz, JY
Kishino, K
Ponce, F
Citation: A. Hangleiter et al., European Materials Research Society 1998 Spring Meeting, Symposium L: Nitrides and related wide band gap materials, June 16-19, 1998, Strasbourg, France - Preface, MAT SCI E B, 59(1-3), 1999, pp. XI-XI
Authors:
Nakamura, S
Kikuchi, A
Kusakabe, K
Sugihara, D
Toyoura, Y
Yamada, T
Kishino, K
Citation: S. Nakamura et al., InGaN/GaN MQW and Mg-doped GaN growth using a shutter control method by RF-molecular beam epitaxy, PHYS ST S-A, 176(1), 1999, pp. 273-277
Authors:
Sugihara, D
Kikuchi, A
Kusakabe, K
Nakamura, S
Toyoura, Y
Yamada, T
Kishino, K
Citation: D. Sugihara et al., 2.6 mu m/h high-speed growth of GaN by RF-molecular beam epitaxy and improvement of crystal quality by migration enhanced epitaxy, PHYS ST S-A, 176(1), 1999, pp. 323-328
Authors:
Nomura, I
Shinozaki, W
Hattori, H
Sano, T
Che, SB
Shimbo, H
Kikuchi, A
Shimomura, K
Kishino, K
Citation: I. Nomura et al., MBE growth of novel MgSe/ZnSeTe: NII-VI compound superlattice quasi-quaternaries on InP substrates and application to light-emitting diodes, J CRYST GR, 202, 1999, pp. 954-956
Authors:
Kita, Y
Kishino, K
Citation: Y. Kita et K. Kishino, New process for manufacturing maleimides, CATAL SURV, 2(2), 1998, pp. 187-198
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