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Results: 1-10 |
Results: 10
Common-base operation of GaN bipolar junction transistors
Authors: Cao, XA Dang, GT Zhang, AP Ren, F Abernathy, CR Pearton, SJ Van Hove, JM Klaassen, JJ Polley, CJ Wowchack, AM Chow, PP King, DJ Chu, SNG
Citation: Xa. Cao et al., Common-base operation of GaN bipolar junction transistors, EL SOLID ST, 3(7), 2000, pp. 333-334
High current, common-base GaN/AlGaN heterojunction bipolar transistors
Authors: Cao, XA Dang, GT Zhang, AP Ren, F Van Hove, JM Klaassen, JJ Polley, CJ Wowchak, AM Chow, PP King, DJ Abernathy, CR Pearton, SJ
Citation: Xa. Cao et al., High current, common-base GaN/AlGaN heterojunction bipolar transistors, EL SOLID ST, 3(3), 2000, pp. 144-146
Effect of N-2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma
Authors: Zhang, AP Dang, GT Ren, F Van Hove, JM Klaassen, JJ Chow, PP Cao, XA Pearton, SJ
Citation: Ap. Zhang et al., Effect of N-2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma, J VAC SCI A, 18(4), 2000, pp. 1149-1152
Simulation of GaN/AlGaN heterojunction bipolar transistors: part I - npn structures
Authors: Cao, XA Van Hove, JM Klaassen, JJ Polley, CJ Wowchak, AM Chow, PP King, DJ Zhang, AP Dang, G Monier, C Pearton, SJ Ren, F
Citation: Xa. Cao et al., Simulation of GaN/AlGaN heterojunction bipolar transistors: part I - npn structures, SOL ST ELEC, 44(7), 2000, pp. 1255-1259
Simulation of GaN/AlGaN heterojunction bipolar transistors: part II - pnp structures
Authors: Cao, XA Van Hove, JM Klaassen, JJ Polley, CJ Wowchak, AM Chow, PP King, DJ Zhang, AP Dang, G Monier, C Pearton, SJ Ren, F
Citation: Xa. Cao et al., Simulation of GaN/AlGaN heterojunction bipolar transistors: part II - pnp structures, SOL ST ELEC, 44(7), 2000, pp. 1261-1265
High temperature characteristics of GaN-based Heterojunction Bipolar Transistors and Bipolar Junction Transistors
Authors: Cao, XA Van Hove, JM Klaassen, JJ Polley, CJ Wowchack, AM Chow, PP King, DJ Ren, F Dang, G Zhang, AP Abernathy, CR Pearton, SJ
Citation: Xa. Cao et al., High temperature characteristics of GaN-based Heterojunction Bipolar Transistors and Bipolar Junction Transistors, SOL ST ELEC, 44(4), 2000, pp. 649-654
GaN/AlGaN HBT fabrication
Authors: Ren, F Han, J Hickman, R Van Hove, JM Chow, PP Klaassen, JJ LaRoche, JR Jung, KB Cho, H Cao, XA Donovan, SM Kopf, RF Wilson, RG Baca, AG Shul, RJ Zhang, L Willison, CG Abernathy, CR Pearton, SJ
Citation: F. Ren et al., GaN/AlGaN HBT fabrication, SOL ST ELEC, 44(2), 2000, pp. 239-244
GaNPN junction issues and developments
Authors: Hickman, R Van Hove, JM Chow, PP Klaassen, JJ Wowchak, AM Polley, CJ King, DJ Ren, F Abernathy, CR Pearton, SJ Jung, KB Cho, H La Roche, JR
Citation: R. Hickman et al., GaNPN junction issues and developments, SOL ST ELEC, 44(2), 2000, pp. 377-381
npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions
Authors: Dang, G Luo, B Zhang, AP Cao, XA Ren, F Pearton, SJ Cho, H Hobson, WS Lopata, J van Hove, JM Klaassen, JJ Polley, CJ Wowchack, AM Chow, PP King, DJ
Citation: G. Dang et al., npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions, SOL ST ELEC, 44(12), 2000, pp. 2097-2100
Uniformity and high temperature performance of X-band nitride power hemts fabricated from 2-inch epitaxy
Authors: Hickman, R Van Hove, JM Chow, PP Klaassen, JJ Wowchack, AM Polley, CJ
Citation: R. Hickman et al., Uniformity and high temperature performance of X-band nitride power hemts fabricated from 2-inch epitaxy, SOL ST ELEC, 42(12), 1998, pp. 2183-2185
Risultati: 1-10 |