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Results: 1-11 |
Results: 11
Resonant tunneling and interface band mixing of X-electrons in GaAs/AlAs heterostructures
Authors: Klipstein, PC
Citation: Pc. Klipstein, Resonant tunneling and interface band mixing of X-electrons in GaAs/AlAs heterostructures, PHYS ST S-B, 223(1), 2001, pp. 87-96
GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment
Authors: Allwood, DA Klipstein, PC Mason, NJ Nicholas, RJ Walker, PJ
Citation: Da. Allwood et al., GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment, J ELEC MAT, 29(1), 2000, pp. 99-105
Determination of the transverse X-point effective mass in AlAs and its pressure dependence
Authors: Im, H Klipstein, PC Grey, R Hill, G
Citation: H. Im et al., Determination of the transverse X-point effective mass in AlAs and its pressure dependence, PHYS REV B, 62(16), 2000, pp. 11076-11083
Pressure-induced Gamma-X crossover in self-assembled In(Ga)As/GaAs quantumdots
Authors: Lyapin, SG Itskevich, IE Trojan, IA Klipstein, PC Polimeni, A Eaves, L Main, PC Henini, M
Citation: Sg. Lyapin et al., Pressure-induced Gamma-X crossover in self-assembled In(Ga)As/GaAs quantumdots, PHYS ST S-B, 211(1), 1999, pp. 79-83
Stress induced exciton mixing in quantum wells
Authors: Glanfield, AR Rau, G Klipstein, PC Smith, GW
Citation: Ar. Glanfield et al., Stress induced exciton mixing in quantum wells, PHYS ST S-B, 211(1), 1999, pp. 269-274
Enhancement of 2D -> 2D tunneling by Gamma-X-Z mixing in GaAs/AlAs resonant tunneling structures at high pressure
Authors: Im, H Klipstein, PC Smith, JM Grey, R Hill, G
Citation: H. Im et al., Enhancement of 2D -> 2D tunneling by Gamma-X-Z mixing in GaAs/AlAs resonant tunneling structures at high pressure, PHYS ST S-B, 211(1), 1999, pp. 489-494
Optical properties of GaAs/Al1-xGaxAs quantum wells subjected to large in-plane uniaxial stress
Authors: Rau, G Glanfield, AR Klipstein, PC Johnson, NF Smith, GW
Citation: G. Rau et al., Optical properties of GaAs/Al1-xGaxAs quantum wells subjected to large in-plane uniaxial stress, PHYS REV B, 60(3), 1999, pp. 1900-1914
Exciton exchange splitting in wide GaAs quantum wells
Authors: Glasberg, S Shtrikman, H Bar-Joseph, I Klipstein, PC
Citation: S. Glasberg et al., Exciton exchange splitting in wide GaAs quantum wells, PHYS REV B, 60(24), 1999, pp. R16295-R16298
Rotation of the conduction band valleys in AlAs due to X-X-X-Y mixing
Authors: Im, H Klipstein, PC Grey, R Hill, G
Citation: H. Im et al., Rotation of the conduction band valleys in AlAs due to X-X-X-Y mixing, PHYS REV L, 83(18), 1999, pp. 3693-3696
Tunneling under pressure: High-pressure studies of vertical transport in semiconductor heterostructures
Authors: Klipstein, PC
Citation: Pc. Klipstein, Tunneling under pressure: High-pressure studies of vertical transport in semiconductor heterostructures, SEM SEMIMET, 55, 1998, pp. 45-116
In situ characterisation of MOVPE by surface photoabsorption II. Interfacemonitoring
Authors: Klipstein, PC Lyapin, SG Mason, NJ Walker, PJ
Citation: Pc. Klipstein et al., In situ characterisation of MOVPE by surface photoabsorption II. Interfacemonitoring, J CRYST GR, 195(1-4), 1998, pp. 168-173
Risultati: 1-11 |