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Results: 1-15 |
Results: 15
Edge-emitting microlasers with one active layer of quantum dots
Authors: Rennon, S Avary, K Klopf, F Reithmaier, JP Forchel, A
Citation: S. Rennon et al., Edge-emitting microlasers with one active layer of quantum dots, IEEE S T QU, 7(2), 2001, pp. 300-305
High-temperature operating 1.3-mu m quantum-dot lasers for telecommunication applications
Authors: Klopf, F Krebs, R Reithmaier, JP Forchel, A
Citation: F. Klopf et al., High-temperature operating 1.3-mu m quantum-dot lasers for telecommunication applications, IEEE PHOTON, 13(8), 2001, pp. 764-766
980 nm quantum dot lasers with very small threshold current densities
Authors: Klopf, F Reithmaier, JP Forchel, A
Citation: F. Klopf et al., 980 nm quantum dot lasers with very small threshold current densities, PHYS ST S-B, 224(3), 2001, pp. 845-848
Two-dimensional photonic crystal laser mirrors
Authors: Happ, TD Kamp, M Klopf, F Reithmaier, JP Forchel, A
Citation: Td. Happ et al., Two-dimensional photonic crystal laser mirrors, SEMIC SCI T, 16(4), 2001, pp. 227-232
Reactive ion etching of deeply etched DBR-structures with reduced air-gapsfor-highly reflective monolithically integrated laser mirrors
Authors: Avary, K Rennon, S Klopf, F Reithmaier, JP Forchel, A
Citation: K. Avary et al., Reactive ion etching of deeply etched DBR-structures with reduced air-gapsfor-highly reflective monolithically integrated laser mirrors, MICROEL ENG, 57-8, 2001, pp. 593-598
Fabrication of semiconductor lasers with 2D-photonic crystal mirrors usinga wet oxidized Al2O3-mask
Authors: Moosburger, J Kamp, M Klopf, F Fischer, M Forchel, A
Citation: J. Moosburger et al., Fabrication of semiconductor lasers with 2D-photonic crystal mirrors usinga wet oxidized Al2O3-mask, MICROEL ENG, 57-8, 2001, pp. 1017-1021
Photoreflectance spectroscopy of vertically coupled InGaAs/GaAs double quantum dots
Authors: Sek, G Ryczko, K Misiewicz, J Bayer, M Klopf, F Reithmaier, JP Forchel, A
Citation: G. Sek et al., Photoreflectance spectroscopy of vertically coupled InGaAs/GaAs double quantum dots, SOL ST COMM, 117(7), 2001, pp. 401-406
Low threshold high efficiency MBE grown GaInAs/(Al)GaAs quantum dot lasersemitting at 980 nm
Authors: Klopf, F Reithmaier, JP Forchel, A
Citation: F. Klopf et al., Low threshold high efficiency MBE grown GaInAs/(Al)GaAs quantum dot lasersemitting at 980 nm, J CRYST GR, 227, 2001, pp. 1151-1154
High-performance 980 nm quantum dot lasers for high-power applications
Authors: Klopf, F Reithmaier, JP Forchel, A Collot, P Krakowski, M Calligaro, M
Citation: F. Klopf et al., High-performance 980 nm quantum dot lasers for high-power applications, ELECTR LETT, 37(6), 2001, pp. 353-354
High frequency characteristics of InAs/GaInAs quantum dot distributed feedback lasers emitting at 1.3 mu m
Authors: Krebs, R Klopf, F Rennon, S Reithmaier, JP Forchel, A
Citation: R. Krebs et al., High frequency characteristics of InAs/GaInAs quantum dot distributed feedback lasers emitting at 1.3 mu m, ELECTR LETT, 37(20), 2001, pp. 1223-1225
12 mu m long edge-emitting quantum-dot laser
Authors: Rennon, S Klopf, F Reithmaier, JP Forchel, A
Citation: S. Rennon et al., 12 mu m long edge-emitting quantum-dot laser, ELECTR LETT, 37(11), 2001, pp. 690-691
InAs/GaInAs quantum dot DFB lasers emitting at 1.3 mu m
Authors: Klopf, F Krebs, R Wolf, A Emmerling, M Reithmaier, JP Forchel, A
Citation: F. Klopf et al., InAs/GaInAs quantum dot DFB lasers emitting at 1.3 mu m, ELECTR LETT, 37(10), 2001, pp. 634-636
Bent laser cavity based on 2D photonic crystal waveguide
Authors: Happ, TD Kamp, M Klopf, F Reithmaier, JP Forchel, A
Citation: Td. Happ et al., Bent laser cavity based on 2D photonic crystal waveguide, ELECTR LETT, 36(4), 2000, pp. 324-325
Quantum-dot microlasers
Authors: Rennon, S Avary, K Klopf, F Wolf, A Emmerling, M Reithmaier, JP Forchel, A
Citation: S. Rennon et al., Quantum-dot microlasers, ELECTR LETT, 36(18), 2000, pp. 1548-1550
Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers
Authors: Klopf, F Reithmaier, JP Forchel, A
Citation: F. Klopf et al., Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers, APPL PHYS L, 77(10), 2000, pp. 1419-1421
Risultati: 1-15 |