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Results: 1-9 |
Results: 9
SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f(max)
Authors: Koester, SJ Hammond, R Chu, JO Mooney, PM Ott, JA Perraud, L Jenkins, KA Webster, CS Lagnado, I de la Houssaye, PR
Citation: Sj. Koester et al., SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f(max), IEEE ELEC D, 22(2), 2001, pp. 92-94
Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy
Authors: Koester, SJ Rim, K Chu, JO Mooney, PM Ott, JA Hargrove, MA
Citation: Sj. Koester et al., Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy, APPL PHYS L, 79(14), 2001, pp. 2148-2150
SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors
Authors: Huang, LJ Chu, JO Canaperi, DF D'Emic, CP Anderson, RM Koester, SJ Wong, HSP
Citation: Lj. Huang et al., SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors, APPL PHYS L, 78(9), 2001, pp. 1267-1269
Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths
Authors: Lu, W Koester, SJ Wang, XW Chu, JO Ma, TP Adesida, I
Citation: W. Lu et al., Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths, J VAC SCI B, 18(6), 2000, pp. 3488-3492
Extremely high transconductance Ge/Si0.4Ge0.6 p-MODFET's grown by UHV-CVD
Authors: Koester, SJ Hammond, R Chu, JO
Citation: Sj. Koester et al., Extremely high transconductance Ge/Si0.4Ge0.6 p-MODFET's grown by UHV-CVD, IEEE ELEC D, 21(3), 2000, pp. 110-112
High performance 0.1 mu m gate-length p-type SiGe MODFET's and MOS-MODFET's
Authors: Lu, W Kuliev, A Koester, SJ Wang, XW Chu, JO Ma, TP Adesida, I
Citation: W. Lu et al., High performance 0.1 mu m gate-length p-type SiGe MODFET's and MOS-MODFET's, IEEE DEVICE, 47(8), 2000, pp. 1645-1652
High-frequency noise performance of SiGe p-channel MODFETs
Authors: Koester, SJ Chu, JO Webster, CS
Citation: Sj. Koester et al., High-frequency noise performance of SiGe p-channel MODFETs, ELECTR LETT, 36(7), 2000, pp. 674-675
High-performance 0.1 mu m gate-length Ge/Si0.4Ge0.6 p-channel MODFETs
Authors: Hammond, R Koester, SJ Chu, JO
Citation: R. Hammond et al., High-performance 0.1 mu m gate-length Ge/Si0.4Ge0.6 p-channel MODFETs, ELECTR LETT, 35(18), 1999, pp. 1590-1591
High-f(T) n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD
Authors: Koester, SJ Chu, JO Groves, RA
Citation: Sj. Koester et al., High-f(T) n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD, ELECTR LETT, 35(1), 1999, pp. 86-87
Risultati: 1-9 |