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Results: 15
Authors:
Kogler, R
Peeva, A
Werner, P
Skorupa, W
Gosele, U
Citation: R. Kogler et al., Gettering centres in high-energy ion-implanted silicon investigated by point defect recombination, NUCL INST B, 175, 2001, pp. 340-344
Authors:
Gueorguiev, YM
Kogler, R
Peeva, A
Panknin, D
Mucklich, A
Yankov, RA
Skorupa, W
Citation: Ym. Gueorguiev et al., Trans-projected-range effect in proximity gettering of impurities in silicon, VACUUM, 62(2-3), 2001, pp. 309-313
Authors:
Serre, C
Perez-Rodriguez, A
Morante, JR
Esteve, J
Acero, MC
Kogler, R
Skorupa, W
Citation: C. Serre et al., Ion beam synthesis of polycrystalline SiC on SiO2 structures for MEMS applications, J MICROM M, 10(2), 2000, pp. 152-156
Authors:
Peeva, A
Kogler, R
Werner, P
de Mattos, AAD
Fichtner, PFP
Behar, M
Skorupa, W
Citation: A. Peeva et al., Evidence for interstitial-type defects in the R-p/2 region of MeV-self-ion-implanted silicon produced by standard ion milling procedure, NUCL INST B, 161, 2000, pp. 1090-1094
Authors:
Gueorguiev, YM
Kogler, R
Peeva, K
Mucklich, A
Panknin, D
Yankov, RA
Skorupa, W
Citation: Ym. Gueorguiev et al., Trans-projected-range gettering of copper in high-energy ion-implanted silicon, J APPL PHYS, 88(11), 2000, pp. 6934-6936
Authors:
Gueorguiev, YM
Kogler, R
Peeva, A
Mucklich, A
Panknin, D
Yankov, RA
Skorupa, W
Citation: Ym. Gueorguiev et al., High-energy ion-implantation-induced gettering of copper in silicon beyondthe projected ion range: The trans-projected-range effect, J APPL PHYS, 88(10), 2000, pp. 5645-5652
Authors:
Kogler, R
Peeva, A
Anwand, W
Brauer, G
Skorupa, W
Werner, P
Gosele, U
Citation: R. Kogler et al., Reply to "Comment on 'Interstitial-type defects away of the projected ion range in high energy ion implanted and annealed silicon' " [Appl. Phys. Lett. 77, 151 (2000)], APPL PHYS L, 77(1), 2000, pp. 153-153
Authors:
Serre, C
Romano-Rodriguez, A
Perez-Rodriguez, A
Morante, JR
Fonseca, L
Acero, MC
Kogler, R
Skorupa, W
Citation: C. Serre et al., beta-SiC on SiO2 formed by ion implantation and bonding for micromechanicsapplications, SENS ACTU-A, 74(1-3), 1999, pp. 169-173
Authors:
Heera, V
Stoemenos, J
Kogler, R
Voelskow, E
Skorupa, W
Citation: V. Heera et al., Crystallization and surface erosion of SiC by ion irradiation at 500 degrees C, MAT SCI E B, 61-2, 1999, pp. 358-362
Authors:
Kogler, R
Eichhorn, F
Mucklich, A
Danilin, AB
Skorupa, W
Citation: R. Kogler et al., Distribution of gettering centres at a buried amorphous layer in silicon, NUCL INST B, 148(1-4), 1999, pp. 334-339
Authors:
Kogler, R
Yankov, RA
Posselt, M
Danilin, AB
Skorupa, W
Citation: R. Kogler et al., Defects remaining in MeV-ion-implanted and annealed Si away from the peak of the nuclear energy deposition profile, NUCL INST B, 147(1-4), 1999, pp. 96-100
Authors:
Eichhorn, F
Schell, N
Matz, W
Kogler, R
Citation: F. Eichhorn et al., Strain and SiC particle formation in silicon implanted with carbon ions ofmedium fluence studied by synchrotron x-ray diffraction, J APPL PHYS, 86(8), 1999, pp. 4184-4187
Authors:
Heera, V
Stoemenos, J
Kogler, R
Voelskow, M
Skorupa, W
Citation: V. Heera et al., Crystallization and surface erosion of SiC by ion irradiation at elevated temperatures, J APPL PHYS, 85(3), 1999, pp. 1378-1386
Authors:
Kogler, R
Peeva, A
Anwand, W
Brauer, G
Skorupa, W
Werner, P
Gosele, U
Citation: R. Kogler et al., Interstitial-type defects away from the projected ion range in high energyion implanted and annealed silicon, APPL PHYS L, 75(9), 1999, pp. 1279-1281
Authors:
Gueorguiev, YM
Kogler, R
Peeva, A
Panknin, D
Mucklich, A
Yankov, RA
Skorupa, W
Citation: Ym. Gueorguiev et al., Impurity gettering by high-energy ion implantation in silicon beyond the projected range, APPL PHYS L, 75(22), 1999, pp. 3467-3469
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