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Results: 1-25 | 26-37
Results: 1-25/37
Increasing the photoluminescence intensity of Ge islands by chemical etching
Authors: Gao, F Huang, CJ Huang, DD Li, JP Kong, MY Zeng, YP Li, JM Lin, LY
Citation: F. Gao et al., Increasing the photoluminescence intensity of Ge islands by chemical etching, CHIN PHYS, 10(10), 2001, pp. 966-969
Properties and turning of intraband optical absorption in InxGa1-xAs/GaAs self-assembled quantum dot superlattice
Authors: Liu, B Zhuang, QD Yoon, SF Dai, JH Kong, MY Zeng, YP Li, JM Lin, LY Zhang, HJ
Citation: B. Liu et al., Properties and turning of intraband optical absorption in InxGa1-xAs/GaAs self-assembled quantum dot superlattice, INT J MOD B, 15(13), 2001, pp. 1959-1968
The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices
Authors: Cao, X Zeng, YP Kong, MY Pan, L Wang, BQ Zhu, ZP
Citation: X. Cao et al., The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices, SOL ST ELEC, 45(5), 2001, pp. 751-754
Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with differentthickness of spacer layer
Authors: Cao, X Zeng, YP Kong, MY Pan, LA Wang, BQ Zhu, ZP Wang, XG Chang, Y Chu, JH
Citation: X. Cao et al., Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with differentthickness of spacer layer, J CRYST GR, 231(4), 2001, pp. 520-524
Changing the size and shape of Ge island by chemical etching
Authors: Gao, F Huang, CJ Huang, DD Li, JP Sun, DZ Kong, MY Zeng, YP Li, JM Lin, LY
Citation: F. Gao et al., Changing the size and shape of Ge island by chemical etching, J CRYST GR, 231(1-2), 2001, pp. 17-21
Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure
Authors: Cao, X Zeng, YP Cui, LJ Kong, MY Pan, LA Wang, BQ Zhu, ZP
Citation: X. Cao et al., Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure, J CRYST GR, 227, 2001, pp. 127-131
High-quality metamorphic HEMT grown on GaAs substrates by MBE
Authors: Zeng, YP Cao, X Cui, LJ Kong, MY Pan, L Wang, BQ Zhu, ZP
Citation: Yp. Zeng et al., High-quality metamorphic HEMT grown on GaAs substrates by MBE, J CRYST GR, 227, 2001, pp. 210-213
Hydrogen behavior in GaN epilayers grown by NH3-MBE
Authors: Kong, MY Zhang, JP Wang, XL Sun, DZ
Citation: My. Kong et al., Hydrogen behavior in GaN epilayers grown by NH3-MBE, J CRYST GR, 227, 2001, pp. 371-375
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability
Authors: Gao, F Lin, YX Huang, DD Li, JP Sun, DZ Kong, MY Zeng, YP Li, JM Lin, LY
Citation: F. Gao et al., Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability, J CRYST GR, 227, 2001, pp. 766-769
Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy
Authors: Gao, F Huang, DD Li, JP Kong, MY Sun, DZ Li, JM Zeng, YP Lin, LY
Citation: F. Gao et al., Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy, J CRYST GR, 223(4), 2001, pp. 489-493
Photoluminescence studies on pseudomorphic delta-doped AlGaAs/InGaAs/GaAs quantum wells
Authors: Wang, XG Chang, Y Gui, YS Chu, JH Cao, X Zeng, YP Kong, MY
Citation: Xg. Wang et al., Photoluminescence studies on pseudomorphic delta-doped AlGaAs/InGaAs/GaAs quantum wells, J INF M W, 19(5), 2000, pp. 333-337
Energy band and acceptor binding energy of GaN and AlxGa1-xN
Authors: Xia, JB Cheah, KW Wang, XL Sun, DZ Kong, MY
Citation: Jb. Xia et al., Energy band and acceptor binding energy of GaN and AlxGa1-xN, MAT SCI E B, 75(2-3), 2000, pp. 204-206
Hydrogen-dependent lattice dilation in GaN
Authors: Zhang, JP Wang, XL Sun, DZ Kong, MY
Citation: Jp. Zhang et al., Hydrogen-dependent lattice dilation in GaN, SEMIC SCI T, 15(6), 2000, pp. 619-621
The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy
Authors: Gao, F Huang, DD Li, JP Lin, YX Kong, MY Li, JM Zeng, YP Lin, LY
Citation: F. Gao et al., The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy, J CRYST GR, 220(4), 2000, pp. 457-460
Influence of phosphine flow rate on Si growth rate in gas source molecularbeam epitaxy
Authors: Gao, F Huang, DD Li, JP Lin, YX Kong, MY Sun, DZ Li, JM Lin, LY
Citation: F. Gao et al., Influence of phosphine flow rate on Si growth rate in gas source molecularbeam epitaxy, J CRYST GR, 220(4), 2000, pp. 461-465
Effect of rapid thermal annealing on InGaAs/GaAs quantum wells
Authors: Zhuang, QD Li, JM Zeng, YP Yoon, SF Zheng, HQ Kong, MY Lin, LY
Citation: Qd. Zhuang et al., Effect of rapid thermal annealing on InGaAs/GaAs quantum wells, J CRYST GR, 212(1-2), 2000, pp. 352-355
Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy
Authors: Liu, JP Huang, DD Li, JP Lin, YX Sun, DZ Kong, MY
Citation: Jp. Liu et al., Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy, J CRYST GR, 208(1-4), 2000, pp. 322-326
Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice
Authors: Zhuang, QD Li, JM Wang, XX Zeng, YP Wang, YT Wang, BQ Pan, L Wu, J Kong, MY Lin, LY
Citation: Qd. Zhuang et al., Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice, J CRYST GR, 208(1-4), 2000, pp. 791-794
Tuning of conduction intersublevel absorption wavelengths in (In, Ga)As/GaAs quantum-dot nanostructures
Authors: Pan, D Towe, E Kennerly, S Kong, MY
Citation: D. Pan et al., Tuning of conduction intersublevel absorption wavelengths in (In, Ga)As/GaAs quantum-dot nanostructures, APPL PHYS L, 76(24), 2000, pp. 3537-3539
Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers
Authors: Zhuang, QD Li, JM Zeng, YP Pan, L Chen, YH Kong, MY Lin, LY
Citation: Qd. Zhuang et al., Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers, J ELEC MAT, 28(5), 1999, pp. 503-505
Hydrogen contaminant and its correlation with background electrons in GaN
Authors: Zhang, JP Sun, DZ Wang, XL Kong, MY Zeng, YP Li, JM Lin, LY
Citation: Jp. Zhang et al., Hydrogen contaminant and its correlation with background electrons in GaN, SEMIC SCI T, 14(5), 1999, pp. 403-405
Energy bands and acceptor binding energies of GaN
Authors: Xia, JB Cheah, KW Wang, XL Sun, DZ Kong, MY
Citation: Jb. Xia et al., Energy bands and acceptor binding energies of GaN, PHYS REV B, 59(15), 1999, pp. 10119-10124
Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100)
Authors: Liu, JP Wang, JZ Huang, DD Li, JP Sun, DZ Kong, MY
Citation: Jp. Liu et al., Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100), J CRYST GR, 207(1-2), 1999, pp. 150-153
Electrical properties of GaN deposited on nitridated sapphire by molecularbeam epitaxy using NH3 cracked on the growing surface
Authors: Zhang, JP Sun, DZ Li, XB Wang, XL Kong, MY Zeng, YP Li, JM Lin, LY
Citation: Jp. Zhang et al., Electrical properties of GaN deposited on nitridated sapphire by molecularbeam epitaxy using NH3 cracked on the growing surface, J CRYST GR, 202, 1999, pp. 429-432
Influence of crystal perfection on the reverse leakage current of the SiGeSi p-n heterojunction diodes
Authors: Liu, XF Liu, JP Li, JP Wang, YT Li, LY Sun, DZ Kong, MY Lin, LY
Citation: Xf. Liu et al., Influence of crystal perfection on the reverse leakage current of the SiGeSi p-n heterojunction diodes, J CRYST GR, 202, 1999, pp. 551-555
Risultati: 1-25 | 26-37