Authors: Reshchikov, MA Korotkov, RY

Citation: Ma. Reshchikov et Ry. Korotkov, Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films - art. no. 115205, PHYS REV B, 6411(11), 2001, pp. 5205

Authors: Korotkov, RY Gregie, JM Wessels, BW

Citation: Ry. Korotkov et al., Electrical properties of p-type GaN : Mg codoped with oxygen, APPL PHYS L, 78(2), 2001, pp. 222-224

Authors: Korotkov, RY Wessels, BW

Citation: Ry. Korotkov et Bw. Wessels, Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy, MRS I J N S, 5, 2000, pp. NIL_258-NIL_263

Authors: Reshchikov, MA Shahedipour, F Korotkov, RY Wessels, BW Ulmer, MP

Citation: Ma. Reshchikov et al., Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers, J APPL PHYS, 87(7), 2000, pp. 3351-3354

Authors: Korotkov, RY Reshchikov, MA Wessels, BW

Citation: Ry. Korotkov et al., Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy, PHYSICA B, 274, 1999, pp. 80-83

Authors: Reshchikov, MA Shahedipour, F Korotkov, RY Ulmer, MP Wessels, BW

Citation: Ma. Reshchikov et al., Deep acceptors in undoped GaN, PHYSICA B, 274, 1999, pp. 105-108