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Results:
1-21
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Results: 21
Authors:
Mayumi, M
Satoh, F
Kumagai, Y
Koukitu, A
Citation: M. Mayumi et al., In situ gravimetric monitoring of decomposition rate from GaN (0001) and (000(1)over-bar) surfaces using freestanding GaN, JPN J A P 2, 40(7A), 2001, pp. L654-L656
Authors:
Motoki, K
Okahisa, T
Matsumoto, N
Matsushima, M
Kimura, H
Kasai, H
Takemoto, K
Uematsu, K
Hirano, T
Nakayama, M
Nakahata, S
Ueno, M
Hara, D
Kumagai, Y
Koukitu, A
Seki, H
Citation: K. Motoki et al., Preparation of large freestanding GaN substrates by hydride vapor phase epitaxy using GaAs as a starting substrate, JPN J A P 2, 40(2B), 2001, pp. L140-L143
Authors:
Koukitu, A
Kumagai, Y
Citation: A. Koukitu et Y. Kumagai, Thermodynamic analysis of group III nitrides grown by metal-organic vapour-phase epitaxy (MOVPE), hydride (or halide) vapour-phase epitaxy (HVPE) andmolecular beam epitaxy (MBE), J PHYS-COND, 13(32), 2001, pp. 6907-6934
Authors:
Kumagai, Y
Takemoto, K
Hasegawa, T
Koukitu, A
Seki, H
Citation: Y. Kumagai et al., Thermodynamics on tri-halide vapor-phase epitaxy of GaN and InxGa1-xN using GaCl3 and InCl3, J CRYST GR, 231(1-2), 2001, pp. 57-67
Authors:
Kumagai, Y
Takemoto, K
Koukitu, A
Seki, H
Citation: Y. Kumagai et al., Thermodynamics on halide vapor-phase epitaxy of InN using InCl and InCl3, J CRYST GR, 222(1-2), 2001, pp. 118-124
Authors:
Matsuo, Y
Nimura, M
Koukitu, A
Kumagai, Y
Seki, H
Takami, S
Kubo, M
Miyamoto, A
Citation: Y. Matsuo et al., Investigation of hydrogen chemisorption on GaAs (111)A Ga surface by in situ monitoring and ab initio calculation, JPN J A P 1, 39(11), 2000, pp. 6174-6179
Authors:
Kumagai, Y
Murakami, H
Koukitu, A
Takemoto, K
Seki, H
Citation: Y. Kumagai et al., Growth of thick hexagonal GaN layer on GaAs (111)A surfaces for freestanding GaN by metalorganic hydrogen chloride vapor phase epitaxy, JPN J A P 2, 39(7B), 2000, pp. L703-L706
Authors:
Mayumi, M
Satoh, F
Kumagai, Y
Takemoto, K
Koukitu, A
Citation: M. Mayumi et al., In situ gravimetric monitoring of decomposition rate from GaN epitaxial surface, JPN J A P 2, 39(7B), 2000, pp. L707-L709
Authors:
Kumagai, Y
Koukitu, A
Seki, H
Citation: Y. Kumagai et al., Investigation of substrate orientation dependence for the growth of GaN onGaAs (111)A and (111)B surfaces by metalorganic hydrogen chloride vapor-phase epitaxy, JPN J A P 2, 39(2B), 2000, pp. L149-L151
Authors:
Kumagai, Y
Mayumi, M
Koukitu, A
Seki, H
Citation: Y. Kumagai et al., In situ gravimetric monitoring of halogen transport atomic layer epitaxy of cubic-GaN, APPL SURF S, 159, 2000, pp. 427-431
Authors:
Koukitu, A
Kumagai, Y
Seki, H
Citation: A. Koukitu et al., Thermodynamic analysis of the MOVPE growth of InAlN, PHYS ST S-A, 180(1), 2000, pp. 115-120
Authors:
Takahashi, N
Koukitu, A
Seki, H
Citation: N. Takahashi et al., Growth and characterization of YBa2Cu3Ox and NdBa2Cu3Ox superconducting thin films by mist microwave-plasma chemical vapor deposition using a CeO2 buffer layer, J MATER SCI, 35(5), 2000, pp. 1231-1238
Authors:
Koukitu, A
Kumagai, Y
Seki, H
Citation: A. Koukitu et al., Thermodynamic analysis of the MOVPE growth of InGaAlN quaternary alloy, J CRYST GR, 221, 2000, pp. 743-750
Authors:
Kangawa, Y
Ito, T
Mori, A
Koukitu, A
Citation: Y. Kangawa et al., Anomalous behavior of excess energy curves of InxGa1-xN grown on GaN and InN, J CRYST GR, 220(4), 2000, pp. 401-404
Authors:
Li, YQ
Koukitu, A
Seki, H
Citation: Yq. Li et al., Thermodynamic analysis of InxGa1-xN growth conditions in molecular beam epitaxy, J APPL PHYS, 88(1), 2000, pp. 571-575
Authors:
Koukitu, A
Kumagai, Y
Taki, T
Seki, H
Citation: A. Koukitu et al., Halogen-transport atomic-layer epitaxy of cubic GaN monitored by in situ gravimetric method, JPN J A P 1, 38(9A), 1999, pp. 4980-4982
Authors:
Koukitu, A
Kumagai, Y
Kubota, N
Seki, H
Citation: A. Koukitu et al., Thermodynamic analysis on the MOVPE growth of nitride semiconductors usinghydrazine, PHYS ST S-B, 216(1), 1999, pp. 707-712
Authors:
Koukitu, A
Taki, T
Narita, K
Seki, H
Citation: A. Koukitu et al., In situ monitoring of arsenic desorption on GaAs (1 1 1)B surface in atomic layer epitaxy, J CRYST GR, 199, 1999, pp. 1111-1118
Authors:
Koukitu, A
Taki, T
Takahashi, N
Seki, H
Citation: A. Koukitu et al., Thermodynamic study on the role of hydrogen during the MOVPE growth of group III nitrides, J CRYST GR, 197(1-2), 1999, pp. 99-105
Authors:
Taki, T
Narita, K
Koukitu, A
Seki, H
Citation: T. Taki et al., Investigation of arsenic desorption from GaAs(111)B surface in atmosphericpressure atomic layer epitaxy, JPN J A P 2, 37(11B), 1998, pp. L1367-L1369
Authors:
Takahashi, N
Koukitu, A
Seki, H
Citation: N. Takahashi et al., Crystallinity and superconducting properties of YBa2Cu3O7-x thin films on NdGaO3 substrate prepared by mist microwave-plasma CVD, J MAT SCI L, 17(10), 1998, pp. 877-879
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