Authors:
Kozanecki, A
Sealy, BJ
Homewood, K
Ledain, S
Jantsch, W
Kuritsyn, D
Citation: A. Kozanecki et al., Sensitization of the 1.54 mu m luminescence of Er3+ in SiO2 films by Yb and Si-nanocrystals, MAT SCI E B, 81(1-3), 2001, pp. 23-28
Authors:
Bak-Misiuk, J
Dynowska, E
Misiuk, A
Calamiotou, M
Kozanecki, A
Domagala, J
Kuristyn, D
Glukhanyuk, W
Georgakilas, A
Trela, J
Adamczewska, J
Citation: J. Bak-misiuk et al., Effect of high temperature-pressure on GaAs layers grown on vicinal Si substrates, CRYST RES T, 36(8-10), 2001, pp. 997-1003
Authors:
Kozanecki, A
Jeynes, C
Barradas, NP
Sealy, BJ
Jantsch, W
Citation: A. Kozanecki et al., The influence of implantation and annealing conditions on optical activityof Er3+ ions in 6H SiC, NUCL INST B, 148(1-4), 1999, pp. 512-516
Authors:
Sokolov, NS
Gastev, SV
Khilko, AY
Suturin, SM
Yassievich, IN
Langer, JM
Kozanecki, A
Citation: Ns. Sokolov et al., Tunneling-assisted autoionization of the localized impurities in nanostructures, PHYS REV B, 59(4), 1999, pp. R2525-R2528
Citation: A. Kozanecki et al., Sensitization of Er3+ emission at 1.5 mu m in SiO2 thermally grown on silicon by coimplantation of Yb, APPL PHYS L, 75(6), 1999, pp. 793-795
Authors:
Kozanecki, A
Przybylinska, H
Jantsch, W
Palmetshofer, L
Citation: A. Kozanecki et al., Room-temperature photoluminescence excitation spectroscopy of Er3+ ions inEr- and (Er plus Yb)-doped SiO2 films, APPL PHYS L, 75(14), 1999, pp. 2041-2043