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Results: 1-13 |
Results: 13
Etching characteristics and mechanical properties of a-SiC : H thin films
Authors: Schmid, U Eickhoff, M Richter, C Krotz, G Schmitt-Landsiedel, D
Citation: U. Schmid et al., Etching characteristics and mechanical properties of a-SiC : H thin films, SENS ACTU-A, 94(1-2), 2001, pp. 87-94
A micromachined high pressure stable mass flow sensor for common-rail injection systems
Authors: Schmid, U Hoffmann, R Krotz, G
Citation: U. Schmid et al., A micromachined high pressure stable mass flow sensor for common-rail injection systems, TEC MES, 68(5), 2001, pp. 208-214
New sensors for automotive and aerospace applications
Authors: Muller, G Krotz, G Schalk, J
Citation: G. Muller et al., New sensors for automotive and aerospace applications, PHYS ST S-A, 185(1), 2001, pp. 1-14
Piezoresistivity of AlxGa1-xN layers and AlxGa1-xN/GaN heterostructures
Authors: Eickhoff, M Ambacher, O Krotz, G Stutzmann, M
Citation: M. Eickhoff et al., Piezoresistivity of AlxGa1-xN layers and AlxGa1-xN/GaN heterostructures, J APPL PHYS, 90(7), 2001, pp. 3383-3386
Oxidation dependence on defect density in 3C-SiC films
Authors: Eickhoff, M Vouroutzis, N Nielsen, A Krotz, G Stoemenos, J
Citation: M. Eickhoff et al., Oxidation dependence on defect density in 3C-SiC films, J ELCHEM SO, 148(6), 2001, pp. G336-G343
Suppression of Si cavities at the SiC/Si interface during epitaxial growthof 3C-SiC on silicon-on-insulator
Authors: Moller, H Krotz, G Eickhoff, M Nielsen, A Papaioannou, V Stoemenos, J
Citation: H. Moller et al., Suppression of Si cavities at the SiC/Si interface during epitaxial growthof 3C-SiC on silicon-on-insulator, J ELCHEM SO, 148(1), 2001, pp. G16-G24
High quality beta-SiC films obtained by low-temperature heteroepitaxy combined with a fast carbonization step
Authors: Moller, H Eickhoff, M Rapp, M Grueninger, HW Krotz, G
Citation: H. Moller et al., High quality beta-SiC films obtained by low-temperature heteroepitaxy combined with a fast carbonization step, APPL PHYS A, 68(4), 1999, pp. 461-465
Heteroepitaxial growth of 3C-SiC on SOI for sensor applications
Authors: Krotz, G Moller, H Eickhoff, M Zappe, S Ziermann, R Obermeier, E Stoemenos, J
Citation: G. Krotz et al., Heteroepitaxial growth of 3C-SiC on SOI for sensor applications, MAT SCI E B, 61-2, 1999, pp. 516-521
Stabilization of the 3C-SiC/SOI system by an intermediate silicon nitride layer
Authors: Zappe, S Obermeier, E Stoemenos, J Moller, H Krotz, G Wirth, H Skorupa, W
Citation: S. Zappe et al., Stabilization of the 3C-SiC/SOI system by an intermediate silicon nitride layer, MAT SCI E B, 61-2, 1999, pp. 522-525
The evolution of cavities in Si at the 3C-SiC/Si interface during 3C-SiC deposition by LPCVD
Authors: Papaioannou, V Moller, H Rapp, M Veoglmeier, L Eickhoff, M Krotz, G Stoemenos, J
Citation: V. Papaioannou et al., The evolution of cavities in Si at the 3C-SiC/Si interface during 3C-SiC deposition by LPCVD, MAT SCI E B, 61-2, 1999, pp. 539-543
Influence of the silicon overlayer thickness of SOI unibond substrates on beta-SIC heteroepitaxy
Authors: Moller, H Eickhoff, M Vogelmeier, L Rapp, M Krotz, G Papaioannou, V Stoemenos, J
Citation: H. Moller et al., Influence of the silicon overlayer thickness of SOI unibond substrates on beta-SIC heteroepitaxy, MAT SCI E B, 61-2, 1999, pp. 567-570
High temperature piezoresistive beta-SiC-on-SOI pressure sensor with on chip SiC thermistor
Authors: Ziermann, R von Berg, J Obermeier, E Wischmeyer, F Niemann, E Moller, H Eickhoff, M Krotz, G
Citation: R. Ziermann et al., High temperature piezoresistive beta-SiC-on-SOI pressure sensor with on chip SiC thermistor, MAT SCI E B, 61-2, 1999, pp. 576-578
SOL thickness dependence of residual strain in SOI material
Authors: Camassel, J Planes, N Falkovsky, L Moller, H Eickhoff, M Krotz, G
Citation: J. Camassel et al., SOL thickness dependence of residual strain in SOI material, ELECTR LETT, 35(15), 1999, pp. 1284-1286
Risultati: 1-13 |