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Results: 1-25 | 26-47
Results: 1-25/47
Kinetics of strain relaxation in semiconductor films grown on borosilicateglass-bonded substrates
Authors: Moran, PD Kuech, TF
Citation: Pd. Moran et Tf. Kuech, Kinetics of strain relaxation in semiconductor films grown on borosilicateglass-bonded substrates, J ELEC MAT, 30(7), 2001, pp. 802-806
Experimental demonstration of 1535-1555-nm simultaneous optical wavelengthinterchange with a nonlinear photonic crystal
Authors: Chowdhury, A Staus, C Boland, BF Kuech, TF McCaughan, L
Citation: A. Chowdhury et al., Experimental demonstration of 1535-1555-nm simultaneous optical wavelengthinterchange with a nonlinear photonic crystal, OPTICS LETT, 26(17), 2001, pp. 1353-1355
Semiconductor devices - Light-emitting diodes as chemical sensors
Authors: Ivanisevic, A Yeh, JY Mawst, L Kuech, TF Ellis, AB
Citation: A. Ivanisevic et al., Semiconductor devices - Light-emitting diodes as chemical sensors, NATURE, 409(6819), 2001, pp. 476-476
The impact of initial growth and substrate nitridation on thick GaN growthon sapphire by hydride vapor phase epitaxy
Authors: Gu, SL Zhang, R Shi, Y Zheng, YD Zhang, L Dwikusuma, F Kuech, TF
Citation: Sl. Gu et al., The impact of initial growth and substrate nitridation on thick GaN growthon sapphire by hydride vapor phase epitaxy, J CRYST GR, 231(3), 2001, pp. 342-351
Bulk nitride growth and related techniques - International Specialist Meeting on Bulk Nitride Growth and Related Techniques - Foz Do Iguacu, Brazil, 12-16 November 2000 - Preface
Authors: Kuech, TF
Citation: Tf. Kuech, Bulk nitride growth and related techniques - International Specialist Meeting on Bulk Nitride Growth and Related Techniques - Foz Do Iguacu, Brazil, 12-16 November 2000 - Preface, J CRYST GR, 231(3), 2001, pp. VII-VII
LEDs: New lamps for old and a paradigm for ongoing curriculum modernization
Authors: Condren, SM Lisensky, GC Ellis, AB Nordell, KJ Kuech, TF Stockman, SA
Citation: Sm. Condren et al., LEDs: New lamps for old and a paradigm for ongoing curriculum modernization, J CHEM EDUC, 78(8), 2001, pp. 1033-1040
Chemical investigations of GaAs wafer bonded interfaces
Authors: Hansen, DM Albaugh, CE Moran, PD Kuech, TF
Citation: Dm. Hansen et al., Chemical investigations of GaAs wafer bonded interfaces, J APPL PHYS, 90(12), 2001, pp. 5991-5999
Spatial variation of electrical properties in lateral epitaxially overgrown GaN
Authors: Hsu, JWP Matthews, MJ Abusch-Magder, D Kleiman, RN Lang, DV Richter, S Gu, SL Kuech, TF
Citation: Jwp. Hsu et al., Spatial variation of electrical properties in lateral epitaxially overgrown GaN, APPL PHYS L, 79(6), 2001, pp. 761-763
Chemical role of oxygen plasma in wafer bonding using borosilicate glasses
Authors: Hansen, DM Albaugh, CE Moran, PD Kuech, TF
Citation: Dm. Hansen et al., Chemical role of oxygen plasma in wafer bonding using borosilicate glasses, APPL PHYS L, 79(21), 2001, pp. 3413-3415
Effect of Sb as a surfactant during the lateral epitaxial overgrowth of GaN by metalorganic vapor phase epitaxy
Authors: Zhang, L Tang, HF Kuech, TF
Citation: L. Zhang et al., Effect of Sb as a surfactant during the lateral epitaxial overgrowth of GaN by metalorganic vapor phase epitaxy, APPL PHYS L, 79(19), 2001, pp. 3059-3061
Carrier density imaging of lateral epitaxially overgrown GaN using scanning confocal Raman microscopy
Authors: Matthews, MJ Hsu, JWP Gu, S Kuech, TF
Citation: Mj. Matthews et al., Carrier density imaging of lateral epitaxially overgrown GaN using scanning confocal Raman microscopy, APPL PHYS L, 79(19), 2001, pp. 3086-3088
Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding
Authors: Moran, PD Chow, D Hunter, A Kuech, TF
Citation: Pd. Moran et al., Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding, APPL PHYS L, 78(15), 2001, pp. 2232-2234
Oriented crystallization of GaSb on a patterned, amorphous Si substrate
Authors: Yi, SS Moran, PD Zhang, X Cerrina, F Carter, J Smith, HI Kuech, TF
Citation: Ss. Yi et al., Oriented crystallization of GaSb on a patterned, amorphous Si substrate, APPL PHYS L, 78(10), 2001, pp. 1358-1360
Dislocation mechanisms in the GaN lateral overgrowth by hydride vapor phase epitaxy
Authors: Kuan, TS Inoki, CK Hsu, Y Harris, DL Zhang, R Gu, S Kuech, TF
Citation: Ts. Kuan et al., Dislocation mechanisms in the GaN lateral overgrowth by hydride vapor phase epitaxy, MRS I J N S, 5, 2000, pp. NIL_76-NIL_81
Dislocation arrangement in a thick LEO GaN film on sapphire
Authors: Dunn, KA Babcock, SE Stone, DS Matyi, RJ Zhang, L Kuech, TF
Citation: Ka. Dunn et al., Dislocation arrangement in a thick LEO GaN film on sapphire, MRS I J N S, 5, 2000, pp. NIL_88-NIL_93
Structural properties of laterally overgrown GaN
Authors: Zhang, R Shi, Y Zhou, YG Shen, B Zheng, YD Kuan, TS Gu, SL Zhang, L Hansen, DM Kuech, TF
Citation: R. Zhang et al., Structural properties of laterally overgrown GaN, MRS I J N S, 5, 2000, pp. NIL_100-NIL_104
The nature and impact of ZNO buffer layers on the initial stages of the hydride vapor phase epitaxy of GAN
Authors: Gu, SL Zhang, R Sun, JX Zhang, L Kuech, TF
Citation: Sl. Gu et al., The nature and impact of ZNO buffer layers on the initial stages of the hydride vapor phase epitaxy of GAN, MRS I J N S, 5, 2000, pp. NIL_124-NIL_129
Transfer of n-type GaSb onto GaAs substrate by hydrogen implantation and wafer bonding
Authors: Zheng, Y Moran, PD Guan, ZF Lau, SS Hansen, DM Kuech, TF Haynes, TE Hoechbauer, T Nastasi, M
Citation: Y. Zheng et al., Transfer of n-type GaSb onto GaAs substrate by hydrogen implantation and wafer bonding, J ELEC MAT, 29(7), 2000, pp. 916-920
Oxygen-related deep levels in Al0.5In0.5P grown by MOVPE
Authors: Cederberg, JG Bieg, B Huang, JW Stockman, SA Peanasky, MJ Kuech, TF
Citation: Jg. Cederberg et al., Oxygen-related deep levels in Al0.5In0.5P grown by MOVPE, J ELEC MAT, 29(4), 2000, pp. 426-429
High-temperature hysteretic electronic effects of (AlxGa1-x)(0.5)In0.5P (x> 0.65)
Authors: Bieg, B Cederberg, JG Kuech, TF
Citation: B. Bieg et al., High-temperature hysteretic electronic effects of (AlxGa1-x)(0.5)In0.5P (x> 0.65), J ELEC MAT, 29(2), 2000, pp. 231-236
Mechanistic study of borosilicate glass growth by low-pressure chemical vapor deposition from tetraethylorthosilicate and trimethylborate
Authors: Hansen, DM Charters, D Au, YL Mak, WK Tejasukmana, W Moran, PD Kuech, TF
Citation: Dm. Hansen et al., Mechanistic study of borosilicate glass growth by low-pressure chemical vapor deposition from tetraethylorthosilicate and trimethylborate, J ELEC MAT, 29(11), 2000, pp. 1312-1318
Model development of GaN MOVPE growth chemistry for reactor design
Authors: Sun, JX Redwing, JM Kuech, TF
Citation: Jx. Sun et al., Model development of GaN MOVPE growth chemistry for reactor design, J ELEC MAT, 29(1), 2000, pp. 2-9
Novel dark-field imaging of GaN {0001} surfaces with low-energy electron microscopy
Authors: Maxson, JB Perkins, N Savage, DE Woll, AR Zhang, L Kuech, TF Lagally, MG
Citation: Jb. Maxson et al., Novel dark-field imaging of GaN {0001} surfaces with low-energy electron microscopy, SURF SCI, 464(2-3), 2000, pp. 217-222
Gas-phase chemistry of metalorganic and nitrogen-bearing compounds
Authors: Watwe, RM Dumesic, JA Kuech, TF
Citation: Rm. Watwe et al., Gas-phase chemistry of metalorganic and nitrogen-bearing compounds, J CRYST GR, 221, 2000, pp. 751-757
An examination of the surface decomposition chemistry of lithium niobate precursors under high vacuum conditions
Authors: Saulys, D Joshkin, V Khoudiakov, M Kuech, TF Ellis, AB Oktyabrsky, SR McCaughan, L
Citation: D. Saulys et al., An examination of the surface decomposition chemistry of lithium niobate precursors under high vacuum conditions, J CRYST GR, 217(3), 2000, pp. 287-301
Risultati: 1-25 | 26-47